• Title/Summary/Keyword: plasma enhanced chemical vapor deposition (PE-CVD)

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Surface and Structural Features of a-Si Thin Films Prepared by Various H2/H2+SiH4 Dilution (수소 가스 분율(H2/H2+SiH4)에 따른 비정질 실리콘 박막의 표면 및 구조 분석)

  • Kwon, Jin-Up
    • Journal of the Korean institute of surface engineering
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    • v.44 no.2
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    • pp.39-43
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    • 2011
  • Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the hydrogen dilution in the gas and optical band gap was decreased. Increasement of the hydrogen contents in the chamber affected on surface roughness. In this study, thickness and surface roughness of the a-Si thin film by different hydrogen dilution was investigated by various techniques.

Preparation and C-V characteristics of $Y_2O_3-StabilzedZrO_2$ Thin Films by PE MO CVD (플라즈마 화학 증착법에 의한 $Y_2O_3-StabilzedZrO_2$박막의 제조와 Capacitance-Voltage특성)

  • Choe, Hu-Rak;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.4 no.5
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    • pp.510-515
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    • 1994
  • Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

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Superhydrophobic nano-hair mimicking for water strider leg using CF4 plasma treatment on the 2-D and 3-D PTFE patterned surfaces

  • Shin, Bong-Su;Moon, Myoung-Woon;Kim, Ho-Young;Lee, Kwang-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.365-365
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    • 2010
  • Similar to the superhydrophobic surfaces of lotus leaf, water strider leg is attributed to hierarchical structure of micro pillar and nano-hair coated with low surface energy materials, by which water strider can run and even jump on the water surface. In order to mimick its leg, many effort, especially, on the fabrication of nanohairs has been made using several methods such as a capillarity-driven molding and lithography using poly(urethane acrylate)(PUA). However most of those effort was not so effective to create the similar structure due to its difficulty in the fabrication of nanoscale hairy structures with hydrophobic surface. In this study, we have selected a low surface energy polymeric material of polytetrafluoroethylene (PTFE, or Teflon) assisted with surface modification of CF4 plasma treatment followed by hydrophobic surface coating with pre-cursor of hexamethyldisiloxane (HMDSO) using a plasma enhanced chemical vapor deposition (PE-CVD). It was found that the plasma energy and duration of CF4 treatment on PTFE polymer could control the aspect ratio of nano-hairy structure, which varying with high aspect ratio of more than 20 to 1, or height of over 1000nm but width of 50nm in average. The water contact angle on pristine PTFE surface was measured as approximately $115^{\circ}$. With nanostructures by CF4 plasma treatment and hydrophobic coating of HMDSO film, we made a superhydrophobic nano-hair structure with the wetting angle of over $160^{\circ}C$. This novel fabrication method of nanohairy structures has been applied not only on 2-D flat substrate but also on 3-D substrates like wire and cylinder, which is similarly mimicked the water strider's leg.

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플라즈마 화학 기상 증착 시스템을 이용한 저온, 저압 하에서 SiN, SiCN 박막 제조

  • Seo, Yeong-Su;Lee, Gyu-Sang;Byeon, Hyeong-Seok;Jang, Ha-Jun;Choe, Beom-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.371.1-371.1
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    • 2014
  • 반도체 트랜지스터의 크기가 점점 미세화 함에 따라 이에 수반되는 절연막에 대한 요구 조건도 까다로워지고 있다. 특히 게이트 산화 막의 두께는 10 nm 이하에서 고밀도를 갖는 높은 유전율 막에 대한 요구가 증가되고 있으며 또한 증착 온도 역시 낮아져야 한다. 이러한 요구사항을 충족하는 기술중의 하나는 매우 낮은 압력 및 200도 이하 저온에서 절연막을 증착하는 것이다. 본 연구에서는 플라즈마 화학 기상 증착(PE-CVD) 시스템을 이용하여 $180^{\circ}C$의 온도 및 10 mTorr의 압력에서 SiN 및 SiCN 박막을 제조하였다. 박막의 특성은 원자층 증착 공정 결과와 유사하면서 증착 속도의 향상을 위해 개조된 사이클릭 화학 기상 증착 공정을 이용하였다. Si 전구체와 산화제는 기판에 공급되기 전에 혼합되어 1차 리간드 분해를 하였으며, 리간드가 일부 제거된 가스가 기판에 흡착되는 구조이다. 기판흡착 후 플라즈마 처리 공정을 이용하여 2차 리간드 분해 공정을 수행하였으며, 반응에 참여하지 않은 가스 제거를 위해 불활성 가스를 이용하여 퍼지 하였다. 공정 변수인 플라즈마 전력, 반응가스유량, 플라즈마 처리 시간은 최적화 되었다. 또한 효율적인 리간드 분해를 위해 ICP와 CCP를 포함하고 있는 이중 플라즈마 시스템에 의해 2회에 걸쳐 분해되어지고, 그 결과로 불순물이 들어있지 않는 순수한 SiN과 SiCN 박막을 증착하였다. XRD 측정 결과 증착된 박막들은 모두 비정질 상이며, 550 nm 파장에서 측정한 SiN 및 SiCN 박막의 굴절률은 각 각 1.801 및 1.795이다. 또한 증착된 박막의 밀도는 2.188 ($g/cm^3$)로서 유전체 박막으로 사용하기에 충분한 값임을 확인하였다. 추가적으로 300 mm 규모의 Si 웨이퍼에서 측정된 비 균일도는 2% 이었다. 저온에서 증착한 SiN 및 SiCN 박막 특성은 고온 공정의 그것과 유사함을 확인하였고, 이는 저온에서의 유전체 박막 증착 공정이 반도체 제조 공정에서 사용 가능하다는 것을 보여준다.

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Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.