• Korean Chemical Engineering Research
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• 제49권3호
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• pp.357-360
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• 2011

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

• 한국재료학회지
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• 제29권9호
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• pp.567-577
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• 2019

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of $150{\sim}550^{\circ}C$ with alkyl/amine or chloride precursors. Due to the low reactivity with $NH_3$ reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

• 한국수소및신에너지학회논문집
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• 제32권5호
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• pp.340-346
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• 2021

The initial electrochemical performance of ceramic fuel cell with thin-film electrolyte fabricated by plasma-enhanced atomic layer deposition method was evaluated in terms of peak power density ratio, open circuit voltage ratio, and activation/ohmic resistance ratios at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively. The peak power density ratio reduced as ~52% for 30 min, which continually decreased as time increased but degradation rate gradually decreased. The open circuit voltage ratio decreased with respect time; however, its behavior was evidently different from the reduction behavior of the peak power density. The activation resistance ratio increased as ~127% for 30 min, which was almost similar with the reduction behavior of the peak power density ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• 한국재료학회지
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• 제25권5호
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.277-277
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• 2010

In this report, we present a very effective growing method of graphene using plasma enhanced chemical vapor deposition(PECVD). The graphene is successfully grown on copper substrate. Low temperature growing is obtained with methane and hydrogen plasma. The graphene layers are analyzed by Raman spectroscopy and atomic force microscope. We also provide a transfer technique of graphene layer onto silicon substrate to build up various kinds of application devices.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.82-82
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• 2015

원자층 단위의 정밀 제어가 가능한 원자층 증착법(Atomic Layer Deposition)은 반도체, 디스플레이, 에너지, MEMS 등 다양한 분야에서 점차 그 응용 범위를 확대하고 있다. 응용분야의 확대와 함께, 물질적 측면에서는 산화물 위주의 적용에서 나아가 금속층, 질화물 등 다양한 물질 개발로 이루어져 왔으며, 이는 precursor의 개발과 함께 공정적 측면에서 plasms를 이용한 plasma-enhanced atomic layer deposition (PEALD)의 개발과 함께 이루어져 왔다. 본 발표에서는 ALD 공정에서의 플라즈마의 활용에 대하여 논의하고, ALD 공정에서의 플라즈마 적용에 따른 영향을 살펴보았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.250-250
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• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

• 한국재료학회지
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• 제17권5호
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.