• Composites Research
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• v.26 no.3
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• pp.165-169
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• 2013

This work presents the tensile properties and water uptake behavior of plasma treated abaca fibers reinforced epoxy composites. The composites were prepared by vacuum assisted resin transfer molding. The effects of treatment on tensile properties and sorption characteristics of abaca fiber composites in distilled water and salt solution at room temperature were investigated. The tensile strength of the composites increased with plasma treatment. With plasma treatment, an improvement of 92.9% was obtained in 2.5 min exposure time in plasma. This is attributed to high fiber-matrix compatibility. Less improvement on tensile properties of hybrid treatment of sodium hydroxide and plasma was obtained. However, both treatments reduced overall water uptake in distilled water and salt solution. Hydrophilicity of the fibers decreased upon plasma and sodium hydroxide treatment, which decreases water uptake.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.125-125
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• 2018

반도체 소자의 미새화에 따라 선폭이 10nm 이하로 줄어듦에 따라, 금속 배선의 저항이 급격하게 상승하고 있다. Cu는 낮은 저항과 높은 전도도를 가지고 있어 현재 배선물질로써 가장 많이 사용되고 있지만, 소자가 미세화됨에 따라 Cu를 미래의 배선물질로써 계속 사용하기에는 몇 가지 문제점이 제기되고 있다. Cu는 electron mean free path (EMFP)가 39 nm로 긴 특성을 가지기 때문에, 선폭이 줄어듦에 따라 surface 및 grain boundary scattering이 증가하여 저항이 급격하게 증가한다. 또한, technology node에 따른 소자의 operating temperature와 current density의 증가로 인해 Cu의 reliability가 감소하게 된다. 텅스텐은 EMFP가 19 nm로 짧은 특성을 가지고 있어, 소자의 크기가 줄어듦에 따라 Cu보다 낮은 저항 특성을 가질 수 있으며, 녹는점이 3695K로 1357K인 Cu보다 높으므로 배선물질로써 Cu를 대체할 가능성이 있다. 본 연구에서는 Inductively Coupled Plasma (ICP) assisted magnetron sputtering을 통해 매우 얇은 텅스텐 박막을 증착하여 저항을 낮추고자 하였다. 고밀도 플라즈마의 방전을 위해, internal-type coil antenna를 사용하였으며 텅스텐 박막의 증착을 위해 DC sputter system이 사용되었다. 높은 에너지를 가진 텅스텐 이온을 이용하여 낮은 온도에서 고품위 박막을 증착할 수 있었으며, dense한 구조의 박막 성장이 가능하였다. ICP assisted를 이용하여 증착했을 때와, 그렇지 않을 때를 비교하여 ICP 조건에 따라서 박막의 저항이 감소함을 확인할 수 있었을 뿐만 아니라 최대 약 65% 감소함을 확인할 수 있었다. XRD를 이용하여 ICP power를 인가했을 때, 높은 저항을 갖는 A-15 구조를 가진 ${\beta}$ peak의 감소와 낮은 저항을 갖는 BCC 구조를 가진 ${\alpha}$ peak의 증가를 상온과 673K에서 증착한 박막 모두에서 확인하였으며, 이를 통해 ICP power가 저항 감소에 영향을 미친다는 것을 확인하였다. 또한, 두 온도 조건에서 grain size를 계산하여 ICP power를 인가함에 따라 두 조건 모두 grain size가 증가하였음을 조사하였다. 또한, XPS 분석을 통해 ICP power를 인가하였을 때 박막의 저항에 많은 영향을 끼치는 O peak이 감소하는 것을 통해 ICP assisted의 효과를 확인하였다. 이를 통해, ICP assisted magnetron sputtering을 통해 텅스텐 박막을 증착함으로써 차세대 배선물질로써 텅스텐의 가능성을 확인할 수 있었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.4711-4717
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• 2011

Formation of TiN films by PVD method and the DC and RF sputtering deposition method can be applied, the injected gas to generate plasma ionization rate of the film forming speed is slow away, anything to increase the adhesion between films limitations have. To improve this, to investigate the deposition and ion beam evaporation simultaneously IBAD(Ion beam assisted deposition) when used, Ion beam surface coating material prior to the survey because the surface cleaning effect of a large, high film adhesion can be obtained. In addition, the high vacuum and low temperature, high purity thin film of uniform thickness in the benefits is.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.115-115
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• 2009

Epitaxial ZnO film was grown on Si(111) substrate with oxidazed CrN buffer by plasma-assisted molecular beam epitaxy (PAMBE). The growth and structural properties are investigated. The single crystalline growth was revealed by in-situ RHEED analysis. Crystalline quality of ZnO film grown on oxidized CrN buffer was investigated by the X-ray rocking curves. The FWHMs of (0002) XRCs was $1.379^{\circ}$. This value was smaller than the ZnO film grown directly on (111) Si substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.923-929
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• 2006

Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.856-857
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• 1998

Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using. RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate $C{\equiv}N$ stretching mode(nitrile), C-H stretching mode, C-H bending mode, C=C stretching mode C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1188-1196
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• 1994

TiN films were deposited onto high speed steel(SKH9) and silicon wafer by plasma-assisted chemical vapor deposition(PACVD) using a TiCl4/N2/H2/Ar gas mixture. The effects of deposition temperature, R.F. power, and H2 concentration on the deposition of TiN were studied. The residual chlorine content and the microhardness of TiN films were also investigated. It was found that TiN films grew with a columnar structure of a strong (200) preferred orientation regardless of the substrate type and the deposition variables. The TiN films consisted of columnar-grains of about 50 to 100 nm in diameter. The columnar grains themselves contained much finer fibrous grains. As deposition temperature increased, the residual chlorine content decreased sharply. R. F. powder enhanced the deposition rate largely. Increasing of H2 concentration had little effect on the residual chlorine.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.731-738
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• 1994

TiN films were deposited on high speed steels by plasma assisted chemical vapor deposition (PACVD), cathode arc ion plating (CAIP) and reactive magnetron sputtering (RMS). The properties of the films deposited by the three different methods were compared. The preferred oriented plane of PACVD-TiN is (200) and those of CAIP-TiN and RMS-TiN are (111). PACVD-TiN shows a dome surface and a microstructure having small grains. CAIP-TiN shows the highest microhardness and the best adhesion strength of the three because it has a dense microstructure and an ill-defined interface. But is shows the greatest surface roughness due to the Ti droplet created by the arc. RMS-TiN shows a microstructure having large voids so that its properties in microhardness and adhesion are the worst of the three.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.38-42
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• 2017

Vanadium nitride (VN) coatings were deposited using inductively coupled plasma (ICP) assisted sputtering at different ICP powers. Microstructural, crystallographic and mechanical characterizations were performed by FE-SEM, AFM, XRD and nanoindentation. The results show that ICP has significant effects on coating's microstructure, structural and mechanical properties of VN coatings. With an increase in ICP power, coating microstructure evolved from a porous columnar structure to a highly dense one. Single- phase cubic (FCC) VN coatings with different preferential orientations and residual stresses were obtained as a function of ICP power. Average crystal grain sizes of single phase cubic (FCC) VN coatings were decreased from 10.1 nm to 4.0 nm with an increase in ICP power. The maximum hardness of 28.2 GPa was obtained for the coatings deposited at ICP power of 200 W. The smoothest surface morphology with Ra roughness of 1.7 nm was obtained in the VN coating sputtered at ICP power of 200 W.