• Title/Summary/Keyword: plasma Temperature

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Surface Modification of Polypropylene by Low Temperature Plasma Polymerization( I ) ―hydrophilicity― (저온 Plasma 중합에 의한 Polypropylene의 표면 개질 (I) -친수성-)

  • Chang, Du Sang;Cho, In Sul
    • Textile Coloration and Finishing
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    • v.8 no.2
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    • pp.8-15
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    • 1996
  • This research was attempted to improve the hydrophilicity of polypropylene(PP) by using low temperature plasma polymerization of acrylic acid(AA) as a starting material. The results of the present study were as follows: The PP films deposited with AA plasma polymer showed excellent hydrophilicity, that the polar parts were about 20 dyn/cm, and also that the surface tensions were about 55 dyn/cm, whereas the disperse parts were not changed. Work of adhesions of the PP films deposited with AA plasma polymer were above 100 erg/ $cm^{2}$. AA plasma polymer formed by low temperature plasma polymerization of acrylic acid(AA) was even thin layer which contained many -OH groups.

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Electron Temperature, Plasma Density and Luminous Efficiency in accordance with Discharge Time in coplanar AC PDPs

  • Jeong, S.H.;Moon, M.W.;Oh, P.Y.;Jeong, J.M.;Ko, B.D.;Park, W.B.;Lee, J.H.;Lim, J.E.;Lee, H.J.;Han, Y.G.;Son, C.G.;Lee, S.B.;Yoo, N.L.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1203-1206
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    • 2005
  • Electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDP's) have been experimentally investigated in accordance with discharge time by a micro-probe in this experiment. The resolution of a step mortor to move in micro-Langmuir probe is 10um.[1-3] The used gas in this experiment is He-Ne-Xe (4%) mixure gas. And sustain voltage is 320V which is above of firing voltage for degradation. The electron temperature and plasma density can be obtained from current-voltage (I-V) characteristics of micro Langmuir probe, in which negative to positive bias voltage was applied to the probe. And Efficiency is calculated by formula related discharge power and light emission. Those experiments operated as various discharge time ($0{\sim}72$ Hours). As a result of this experiment, Electron Temperature was increased from 2eV to 5eV after discharge running time of 20 hours and saturates beyond 20 hours. The plasma density is inversely proportional to the square root of electron temperature. So the plasma density was decreased from $1.8{\times}10^{12}cm^{-3}$ to $8{\times}10^{11}cm^{-3}$ at above discharge running time. And the Efficiency was reduced to 70% at 60hours of discharge running time.

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A Study in The Efficiency Improvement of Thermal Plasma Gas Processor Through Fluid Dynamics Analysis of Reaction Zone (반응부의 유동해석을 통한 열플라즈마 가스처리기의 효율 개선)

  • SeoMun, Jun;Chung, Jin-Do;Koo, Kyung-Wan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.3
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    • pp.669-673
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    • 2011
  • This study explores the numerical analysis method of fluid dynamics in the reaction section to improve the gas processing efficiency in the hazardous gas removal by atmospheric thermal plasma. This study also intends to contribute in technology advance to improve the processing efficiency and make the process more stable. Numerical analysis of temperature distribution in the reaction section dependent on the change in flow velocity of Ar and plasma temperature change, which are major control variables in the cracking process of HFC-23 using arc plasma, was done. The characteristic of incoming oxygen by temperature suggested that when temperature increased to 1600K, 1700K, 1800K respectively, the range of cracking temperature 1500K increased to 75.0%, 83.3%, 90.2% respectively. The temperature change of Ar by velocity change was widest in the area higher than 1500K when the velocity was 2.5m/s; however, since there was no big difference when the velocity was 2m/s, it is believed that 2 m/s would be most proper.

Experimental Research of an ECR Heating with R-wave in a Helicon Plasma Source

  • Ku, Dong-Jin;An, C.Y.;Park, Min;Kim, S.H.;Wang, S.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.274-274
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    • 2012
  • We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

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Optimization of PEALD-Ru Process using Ru(EtCp)2 (Ru(EtCp)2 전구체를 이용한 PEALD Ru 공정 최적화에 관한 연구)

  • Kwon, Se-Hun;Jeong, Young-Keun
    • Journal of Powder Materials
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    • v.20 no.1
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    • pp.19-23
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    • 2013
  • Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

THERMAL PLASMA DECOMPOSITION OF FLUORINATED GREENHOUSE GASES

  • Choi, Soo-Seok;Park, Dong-Wha;Watanabe, Takyuki
    • Nuclear Engineering and Technology
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    • v.44 no.1
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    • pp.21-32
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    • 2012
  • Fluorinated compounds mainly used in the semiconductor industry are potent greenhouse gases. Recently, thermal plasma gas scrubbers have been gradually replacing conventional burn-wet type gas scrubbers which are based on the combustion of fossil fuels because high conversion efficiency and control of byproduct generation are achievable in chemically reactive high temperature thermal plasma. Chemical equilibrium composition at high temperature and numerical analysis on a complex thermal flow in the thermal plasma decomposition system are used to predict the process of thermal decomposition of fluorinated gas. In order to increase economic feasibility of the thermal plasma decomposition process, increase of thermal efficiency of the plasma torch and enhancement of gas mixing between the thermal plasma jet and waste gas are discussed. In addition, noble thermal plasma systems to be applied in the thermal plasma gas treatment are introduced in the present paper.

APPLICATION OF RADIO-FREQUENCY (RF) THERMAL PLASMA TO FILM FORMATION

  • Terashima, Kazuo;Yoshida, Toyonobu
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.357-362
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    • 1996
  • Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

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Time variation characteristic of pulse-modulated high frequency plasma (펄스 모듈레이션된 고주파 플라즈마의 시변 특성)

  • Lee, S.H.;Lee, D.S.;Jo, Y.S.;Kim, D.H.;Lee, H.J.;Park, C.H.
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1817-1819
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    • 2004
  • From the plasma application point of view, electron temperature and density are one of the most important parameters for plasma process. But it is only available to control plasma by adjusting external factors like gas pressure and input power. In this paper, pulse-modulated plasma is generated by modulating 13.56GHz RF power with 1, 5, 10kHz pulse. And Langmuir probe technique is used to study the distribution of electron temperature and density. When modulated pulse is off, electron temperature decreases gradually in form of exponential decay. The value t of exponential decay slope is 33.619, 13.834, 10.803 in 1kHz. 5kHz. 10kHz. This implies that this method can be used to control electron temperature and density.

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Electron Density and Electron Temperature in Atmospheric Pressure Microplasma

  • Tran, T.H.;Kim, J.H.;Seong, D.J.;Jeong, J.R.;You, S.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.152-152
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    • 2012
  • In this work we measured electron temperature and electron density of a microplasma by optical emission spectroscopy. The plasma is generated from a small discharge gap of a microwave parallel stripline resonator (MPSR) in Helium at atmospheric pressure. The microwave power supplied for this plasma source from 0.5 to 5 watts at a frequency close to 800 MHz. The electron temperature and electron density were estimated through Collisional-radiative model combined with Corona-equilibrium model. The results show that the electron density and temperature of this plasma in the case small discharge gap width are higher than that in larger gap width. The diagnostic techniques and associated challenges will be presented and discussed.

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A Study on the Low-Temperature Plasma$(O_2)$ Etching of Poly (ethylene terephthalate) Fabrics (I) -Effects of Weight Loss and Bathochromicity- (PET 직물에 대한 저온 plasma$(O_2)$ Ethching에 관한 연구(I))

  • Cho, Hwan;Jeong, Hee-Cheon;Cho, In-Sul;Huh, Man-Woo;Chang, Du-Sang
    • Textile Coloration and Finishing
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    • v.2 no.3
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    • pp.8-13
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    • 1990
  • In order to study the modification of wettability, tactility, and bathochromicity of the poly (ethylene Terephthalate) (PET) fabrics, low-temperature plasma$(O_2)$ has been irradiated on the PET fabrics in various conditions. The results obtained from this study were as follows; 1) The weight loss rate of plasma-treated PET fabrics is proportional to irradiation time and internal gas temperature of treating chamber. Also, the effect of weight loss is remarkable at gas pressure ranging from 3 torr to 5 torr. 2) The bathochromic effect of PET fabrics treated with low-temperature plasma$(O_2)$ was improved.

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