• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.992-995
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• 2011

The optical properties of ZnO thin film, being treated by O-plasma, have been studied using Photoluminescence(PL) spectroscopy with the change of temperature from 10 K to 290 K. Two characteristic peaks were identified at 10 K : 3.357 eV($D^{\circ}X$) and 3.324 eV(TES). The peak of $D^{\circ}X$ is believed to be due to neutral donor bound excitons where the donor is in the ground state. However, the TES(Two Electron Satellite) peak indicates the excited state of the donor(excitation energy was ~30 meV). The donor binding energy was estimated to be 44 meV, which indicates the possible presence of the neutral donor bound excitons at RT. The thermal effect including thermal broadening was identified from temperature evolution of the spectrum. Both the peak intensity and the peak energy have decreased as the temperature increases. As the temperature approaches to RT, the two peak merges into one broad peak, which is considered a combination of multiple peaks having different physical origins.

• Asian-Australasian Journal of Animal Sciences
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• v.11 no.4
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• pp.416-421
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• 1998

The objective of this study was to investigate the responsiveness of hypophysis and gonads to synthetic GnRH among noncycling Murrah buffalo heifers at 24 months of age. The plasma FSH, LH, estradiol and progesterone levels were measured in blood samples collected at 1 hour before and upto 18th day subsequent to the administration of GnRH ($(200 {\mu}g)$) or saline (2 ml). The pretreatment levels of plasma FSH, LH estradiol and progesterone among GnRH treated heifers (N = 6) were $11.55{\pm}0.57ng/ml$, $0.68{\pm}0.06ng/ml$, $19.84{\pm}0.82pg/ml$ and $0.45{\pm}0.07ng/ml$ respectively. A quick elevation of FSH (p < 0.01) and LH (p < 0.05) within 5 min of GnRH administration was observed in all the heifers. The peak FSH ($74.97{\pm}18.63ng/ml$) and LH ($3.09{\pm}0.54ng/ml$) level was obtained at 30 min of GnRH administration. The elevated level of plasma estradiol on 5th to 18th day, FSH on 7th to 9th day (n = 3) and the progesterone on 13th to 18th day (n = 2) of GnRH injection was obtained. The study indicates that gonads of buffalo heifers at 24 months of age are responsive of GnRH induced gonadotropin release for folliculogenesis and luteal tissue formation

• Asian-Australasian Journal of Animal Sciences
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• v.11 no.1
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• pp.78-83
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• 1998

The objective of this study was to investigate the responsiveness of hypophysis and gonads to synthetic GnRH among prepubertal buffalo heifers at 12 months of age. Peripheral plasma FSH, LH, estradiol and progesterone level were measured in blood samples collected at 1 hr before and up to 18 days subsequent to the administration of $200{\mu}g$ GnRH (n=6) or saline (n=6) in Murrah buffalo heifers. The pretreatment peripheral plasma FSH, LH, estradiol and progesterone among GnRH treated heifers were $7.35{\pm}0.45ng/ml$, $1.08{\pm}0.3ng/ml$, $22.93{\pm}1.06pg/ml$ and $0.27{\pm}0.04ng/ml$ respectively. A quick elevation (p < 0.01) of FSH and LH within five min of GnRH administration was observed in all geifers. Although the peak FSH $(89.57{\pm}23.43ng/ml)$ and LH $(7.52{\pm}3.08ng/ml)$ reached by 10 min of GnRH administration, yet the animals differed both in terms of their amplitude response of FSH and LH release as well as in terms of time which animals took to exhiit maximum response to GnRH administration. The GnRH administration did not cause alteration in plasma estradiol and progesterone level. The present study suggests that the pituitary of 12 month buffalo heifers has capacity to synthesize and store of gonadotropin and have developed receptors for GnRH for a spike of gonadotropin release.

• Journal of Nutrition and Health
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• v.31 no.3
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• pp.289-296
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• 1998

A large body of epidemiologic evidence suggests inverse relationships between ischemic heart disease and plasma vitamin C and E concentrations. Smokers have lower plasma concentrations of these vitamins than do nonsmokers. Smokers therefore need antioxidant vitamin supplementation . The purpose of study was to investigate the effect of antioxidant vitamin supplementation on blood composition in smoking college men. 24 subjects were divided into 3 groups of which were the vitamin C supplementation group(n=8), the vitamin E supplementation group(n=8), and the vitamin C+E supplementation group(n=8). The vitamin supplementation group consumed 500mg of ascorbic acid, the vitamin E supplementation group consumed 200IU of D-$\alpha$-tocopherol , and the vitamin C+E supplementation group consumed 500mg of ascorbic acid +200IU of D-$\alpha$-tocopherol for 4 weeks. We examined the blood compositions of the volunteers bofore and after vitamins were supplemented . The results obtained were as follows ; intakes of energy , carbohydrate , fat protein , vitamin C and vitamin E were not significantly affected by vitamin supplementation in all groups. Blood glucose concentrations were not significantly affected by vitamin supplementation in all groups. Concentrations of plasma uric acid and alkaline phosphatase activity were decreased significantly (p<0.05) with vitamin E supplementation. The results of this study show that antioxidant vitamin supplementation in smokers has a tendency to decrease coronary heart disease risk.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.68-74
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• 1998

Improved performance and suppressed short-channel effects of polysilicon thin film transistors (poly-Si TFTs) with very thin electron cyclotron resonance (ECR) $N_2$O-plasma gate oxide have been investigated. Poly-Si TFTs with ECR $N_2$O-plasma oxide ($N_2$O-TFTs) show better performance as well as suppressed short-channel effects than those with conventional thermal oxide. The fabricated $N_2$O-TFTs do not show threshold voltage reduction until the gate length is reduced to 3 ${\mu}{\textrm}{m}$ for n-channel and 1 ${\mu}{\textrm}{m}$ for p-channel, respectively. The improvements are due to the smooth interface, passivation effects, and strong Si ≡ N bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.666-670
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• 2004

VLSI 소자에서 design rule(D/R)이 작아져 각 단위 Pattern의 size가 작아짐에 따라 aspect ratio가 커지게 되었다. 산화막 contact etch를 하는데 있어 산화막 측벽을 보호하는데, 이러한 보호막은 주로 fluoro-carbon 계열의 polymer precursor들이 사용된다. Aspect ratio(A/R)가 5 이하일 때에는 측벽의 보호막에 의한 바닥 변형이 문제가 되지 않으나, 10 이상의 A/R를 가진 contact에서는 크기가 줄고, 모양이 불균형하게 변하는 바닥 변형을 쉴게 관찰할 수 있다. 이러한 바닥 변형이 커지면 contact 저항이 높아지는 것은 물론이고, 심하게는 하부 pattern과 overlap 불량을 유발할 수 있다. 본 논문에서는 바닥변형을 일으키는 원인을 분석하고 fluoro-carbon 계열의 polymer precursor의 종류$(C_4_F6\;vs.\;C_3F_8)$에 따른 polymer증착 상태 확인 및 pattern비대칭에 따른 바닥 변형의 고찰과 plasma etching 시 H/W 변형을 통해 바닥 변형이 거의 없는 조건을 찾아낼 수 있었다.

• Korean Journal of Biological Psychiatry
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• v.8 no.1
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• pp.116-122
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• 2001

Objectives : Schizophrenia manifests a variety of interindividual differences in therapeutic response to antipsychotics. This might be attributable to dopamine and serotonin receptors that a important target for various antipsychotics, and the $D_3$ receptor(DRD3) alleles they carry. The purpose of our study was to investigate whether the plasma levels of homovanillic acid(HVA) and 5-hydroxyindoleacetic acid(HIAA), and the polymorphism of DRD3 can be held as a predictor of treatment response in chronic schizophrenic patients. Methods : Therapeutic response for 116 korean schizophrenia patient treated during 48 weeks were assessed by PANSS used as the clinical symptom rating scales. The levels of concentration of HVA and 5-HIAA were examined by HPLC at baseline and at 48 weeks. We classified the polymorphism of DRD3 receptor using amplifying by polymerase chain reaction(PCR). Results : Neither concentrations of HVA and 5-HIAA nor genotype of dopamine 3 receptor were not significantly associated with the therapeutic response. But, the patients who has A1 alleles of DRD3 gene showed poor therapeutic responses. Conclusion : A1 allele of DRD3 gene is associated with poor prognosis of chronic schizophrenia.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.142-145
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• 2005

AC-PDP에서 발광 휘도와 발광 효율의 개선은 매우 중요한 과제중의 하나이다. 높은 발광 휘도와 발광 효율을 위해선 VUV의 높은 발광 효율이 요구되어진다. 이 실험에서는 AC-PDP에서 Ne-Xe의 2원 혼합기체와 He-Ne-Xe의 3원 혼합기체의 VUV 발광 세기를 측정하였다. 기체 압력은 200 Torr, 300 Torr, 400 Torr, 500 Torr로 유지하였고, Xe 혼합비는 1%, 2%, 4%, 7%, 10%, 15%를 사용하였다. 진공자외선 발광 세기는 He-Ne-Xe의 3원 혼합기체가 Ne-Xe의 2원 혼합기체보다 발광 세기가 훨씬 높다는 것을 알 수 있었다. 그리고 Xe 함량이 증가함에 따라 공명선인 147 nm의 발광 세기는 Xe 혼합비가 약 10%까지는 증가하다가 10% 이후에는 포화되고, 반면 분자선인 173 nm은 Xe 함량과 가스 압력이 증가함에 따라 발광 세기가 증가하였다.

• Korean Journal of Animal Reproduction
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• v.12 no.2
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• pp.97-102
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• 1988

The effect of supplementary feeding on postpartum ovarian activity, reproductive performance and plasma progesterone concentrations in Cheju native cows was studies. The group with adequate nutrition had greater mean body weight than did the underfed group before and after calving. First ovulation occurred 19.5 days and first oestrus at 37.8 days postpartum in the standard group, however, there was delay in first ovulation and oestrus in the restricted group (73.4 days and 111.8 days). Progesterone concentraitons of full fed animals gradually increased from 6 weeks(0.5ng/ml) to 12 weeks(3.3ng/ml) after calving. However, progesterone concentrations of underfed animals had a slight increase in 10 weeks after dalving(0.80ng/ml).