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http://dx.doi.org/10.4313/JKEM.2011.24.12.992

PL Study on the Oxygen-Plasma-Treated ZnO Thin Film  

Cho, Jae-Won (Department of Electrophysics, Kwangwoon University)
Rhee, Seuk-Joo (Department of Physics, Hankuk University of Foreign Studies)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.12, 2011 , pp. 992-995 More about this Journal
Abstract
The optical properties of ZnO thin film, being treated by O-plasma, have been studied using Photoluminescence(PL) spectroscopy with the change of temperature from 10 K to 290 K. Two characteristic peaks were identified at 10 K : 3.357 eV($D^{\circ}X$) and 3.324 eV(TES). The peak of $D^{\circ}X$ is believed to be due to neutral donor bound excitons where the donor is in the ground state. However, the TES(Two Electron Satellite) peak indicates the excited state of the donor(excitation energy was ~30 meV). The donor binding energy was estimated to be 44 meV, which indicates the possible presence of the neutral donor bound excitons at RT. The thermal effect including thermal broadening was identified from temperature evolution of the spectrum. Both the peak intensity and the peak energy have decreased as the temperature increases. As the temperature approaches to RT, the two peak merges into one broad peak, which is considered a combination of multiple peaks having different physical origins.
Keywords
ZnO; Thin Film; O-plasma treatment; PL;
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