• Title/Summary/Keyword: planar Hall effect

Search Result 25, Processing Time 0.028 seconds

Magnetotransport of Be-doped GaMnAs (GaMnAs의 Be 병행 도핑에 의한 자기 수송 특성 연구)

  • Im W. S.;Yoon T. S.;Yu F. C.;Gao C. X.;Kim D. J.;Ibm Y. E.;Kim H. J.;Kim C. S.;Kim C. O.
    • Korean Journal of Materials Research
    • /
    • v.15 no.1
    • /
    • pp.73-77
    • /
    • 2005
  • Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.