• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.119-122
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• 2009

As infrared light radiates, the CMOS Readout IC (ROIC) for the microbolometer typed infrared sensor detects voltage or current which is caused by the variation of resistance in the bolometer sensor. A serious problem we may have in designing the ROIC is the value of bolometer and reference resistors will be changed due to process variation. Since each pixel does not have the same value of resistance, fixed pattern noise problems happen during the sensor operations. In this paper, we propose a novel technique to compensate the fluctuation of reference resistance with taking account of process variation. By using a comparator and a cross coupled latch, we will make the value of reference resistor same as the bolometer's.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.148-149
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• 2008

As infrared light is radiated, the CMOS Readout IC (ROIC) for the microbolometer type infrared sensor detects voltage or current when the resistance value in the bolometer sensor varies. One of the serious problems in designing the ROIC is that resistances in the bolometer and reference resistor have process variation. This means that each pixel does not have the same resistance, causing serious fixed pattern noise problems in sensor operations. In this paper, Reference resistor compensation technique was proposed. This technique is to compensate the reference resistance considering the process variation, and it has the same reference resistance value as a bolometer cell resistance by using a comparator and a cross coupled latch.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.7-8
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• 2009

In the presence of infrared light, a CMOS Readout IC (ROIC) for a microbolometer typed infrared sensor detects the voltage or current that is caused by the changing in resistance in the bolometer sensor. A serious problem in designing the ROIC is how the value of the bolometer and reference resistors vary because of variations in manufacturing process. Since different pixel have different, resistance values, sensor operations must contend with fixed pattern noise (FPN) problems. In this paper, we propose a novel technique to compensate for the fluctuation in reference resistance by tiling into account the process variation. By using constant current source basing and correlated double sampling, we solved FPN.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.306-310
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• 2018

In order to develop a highly sensitive infrared sensor, it is necessary to develop techniques for decreasing the rate of heat absorption and the transition of the absorption wavelength to a longer wavelength, both of which can be induced by decreasing the pixel size of the bolometer. Therefore, in this study, $1{\mu}m$ hole-arrays with a subwavelength smaller than the incident infrared wavelength were formed on the amorphous silicon-based microbolometer pixels in the absorber, which consisted of a TiN absorption layer, an a-Si resistance layer and a SiNx membrane support layer. We demonstrated that it is possible to reduce the thermal time constant by 16% relative to the hole-patternless bolometer, and that it is possible to shift the absorption peak to a shorter wavelength as well as increase absorption in the $4-8{\mu}m$ band to compensate for the infrared long-wavelength transition. These results demonstrate the potential for a new approach to improve the performance of high-resolution microbolometers.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.501-504
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• 2006

The Process technology for uniform SLS poly-Si and performance enhancement of furnace activated poly-Si TFTs are reported. By strictly optimizing SLS optics, threshold voltage variation in pixel TFTs was remarkably decreased and the non-uniformity such as SLS shot mark was removed. Optimized doping process for low sheet resistance and passivation annealing are critical for the enhancement of device performances.