• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.424-429
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• 2000

A novel differential pressure sensor has been developed with silicon beams embedded in a silicone rubber membrane. The transducer is usable for most applications involving exposure to harsh media. A piezoresistive differential pressure sensor using silicone rubber membrane has been fabricated on the selectively diffused (100)-oriented n/n+/n silicon substrates by a unique silicon micro-machining technique using porous silicon etching. The pressure sensitivity is about $0.66\;{\mu}V/mmHg$ and the non-linearity is less than 0.1%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.62-68
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• 1990

On the basis of standard Si processing, the miniaturized piezoresistive-type Si pressure sensor with a chip size of $1.7{\times}1.7{mm^2}$ was fabricated and its operating characteristics were investigated. The sensor chip has a full-bridge type of 4 boron-diffused resistors which is formed on an $1.0{\times}1.0{mm^2}$ area, $20{\mu}m$ thick n-type Si diaphragm and finally, encapsulated under room temperature, 1 atm in order to measure a gauge pressure. The operating characteristics of this sensor were determined as a pressure sensitivity of $14.2{\mu}$V/VmmHg, a rated pressure range of 0~760 mmHg, and a maximum nonlinearity of $1.0{\%}$ FS at room temperature.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.148-155
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• 2001

A pressure sensor on the tip of a catheter which is utilized to measure the in-vivo pressure in a human body was fabricated and the characteristic of the pressure sensor as measured. To fit into a catheter with 1 mm caliber, samples of $150\;{\mu}m$(thickness) ${\times}$ (600, 700, 800, 900, 1000) ${\mu}m$(width) ${\times}2\;mm$(length) was fabricated. The thicker face with $450\;{\mu}m$ thickness of SDB wafer was made thin to $134\;{\mu}m$ thickness using KOH etchant and it made possible to fabricate sensor cell with the width shorter than 1 mm. Different to the whitstone bridge sensor, we formed one piezoresistor and one reference resistor in sensor. Therefore there are possibilities of reduction of the sensitivity, then by using the simulation tool ANSYS 5.5.1, the location and the type of the piezoresistor was optimized. Another piezoresistor type of sensor which contain one longitudinal and one transverse piezoresistor was fabricated at the same time, but the sensitivity was not improved very much. To get the output versus the pressure, a constant current source and a implementation amplifier was used. As a result, the maximum sensitivity of the sensor with one piezoresistor was $1.6\;{\mu}V/V/mmHg$.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.173-179
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• 2001

The currently used semiconductor pressure sensors are piezoresistive and capacitive type. Especially, semiconductor micro pressure sensors have a great deal of attention because of their small size. However, its fabrication processes are difficult, so that its yield is poor. For the purpose of resolving the drawbacks of the existing silicon pressure sensors, we demonstrate a new type of pressure sensor using PSFET(pressure sensitive field effect transistor) and investigate its operational characteristics. We used PZT(Pb(Zr,Ti)$O_3$) as a pressure sensing material. PZT thin films were deposited on a gate oxide of MOSFET by an rf-magnetron sputtering method. To abtain the stable phase, perovskite structure, furnace annealing technique have been employed in PbO ambient. The sensitivity of the PSFET was 0.38 mV/mmHg.

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.45-53
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• 1994

A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.

• Science of Emotion and Sensibility
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• v.24 no.2
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• pp.49-56
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• 2021

In this study, we investigated the necessary mechanical properties of conductive multifilament yarns for fabricating the electrodes of biosignal measurement pressure and stretch textile sensors using embroidery. When electrodes and circuits for smart wearable products are produced through the embroidery process using conductive multifilament yarns, unnecessary material loss is minimized, and complex electrode shapes or circuit designs can be produced without additional processes using a computer embroidering machine. However, because ordinary missionary threads cannot overcome the stress in the embroidery process and yarn cutting occurs, herein, we analyzed the S-S curve, thickness, and twist structure, which are three types of silver-coated multifilament yarns, and measured the stress in the thread of the embroidery simultaneously. Thus, the required mechanical properties of the yarns in the embroidery process were analyzed. In the actual sample production, cutting occurred in silver-coated multifilament rather than silver-coated polyamide/polyester, which showed the lowest S-S curve. In the embroidery process, the twist was unwound through repetitive vertical movement. Further, we fabricated a piezoresistive pressure/tension sensor to measure gauge factor, which is an index for measuring biological signals. We confirmed that the sensor can be applied to the fabrication of embroidery electrodes, which is an important process in the mass production of smart wearable products.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1033-1036
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• 2003

In this paper, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ ammonium persulfate (AP) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-uniformity exists on the etched surface because of formation of hillocks on the <100> surface. With the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square diaphragms of 20${\mu}{\textrm}{m}$ thickness and 100~400${\mu}{\textrm}{m}$ one-side length were fabricated successfully by applying optimum Si etching conditions of TMAH/AP solutions.

• Fashion & Textile Research Journal
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• v.18 no.6
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• pp.733-745
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• 2016

This paper provides a review of wearable textile strain sensors that can measure the deformation of the body surface according to the movements of the wearer. In previous studies, the requirements of textile strain sensors, materials and fabrication methods, as well as the principle of the strain sensing according to sensor structures were understood; furthermore, the factors that affect the sensing performance were critically reviewed and application studies were examined. Textile strain sensors should be able to show piezoresistive effects with consistent resistance-extension in response to the extensional deformations that are repeated when they are worn. Textile strain sensors with piezoresistivity are typically made using conductive yarn knit structures or carbon-based fillers or conducting polymer filler composite materials. For the accuracy and reliability of textile strain sensors, fabrication technologies that would minimize deformation hysteresis should be developed and processes to complement and analyze sensing results based on accurate understanding of the sensors' resistance-strain behavior are necessary. Since light-weighted, flexible, and highly elastic textile strain sensors can be worn by users without any inconvenience so that to enable the users to continuously collect data related to body movements, textile strain sensors are expected to become the core of human interface technologies with a wide range of applications in diverse areas.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.5-11
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• 1994

This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/$SiO_{2}$/Si and Si/$Al_{2}O_{3}$/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to $300^{\circ}C$. In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the SOI pressure sensors was controlled to within a standard deviation of ${\pm}2.3%$ over 200 devices. Moreover, the pressure sensors fabricated on the double SOI ($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.196-202
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• 2000

In this paper, we proposed the new bridge combination detection method for three dimensional piezoresistive silicon accelerometer, and the accelerometer with SOI structures was fabricated by bulk micromachining technology for using higher temperature than $200^{\circ}C$. The sensitivities of fabricated accelerometer for X, Y and Z-axis acceleration were about 8mV/V G, 8mV/V G and 40mV/V G. The nonlinearity of the output voltage was 1.6%FS and cross-axis sensitivity was within 4.6%. We confirmed that the three bridges detection method is very simple and the output characteristics of this accelerometer were similar to arithmetic circuit method accelerometer. The temperature characteristics of SOI structure accelerometer showed high operating temperature and good stability. And the temperature coefficient of offset voltage and sensitivity were $1033ppm^{\circ}C^{-1}$ and $1145ppm^{\circ}C$ respectively.