• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1381-1384
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the distribution of the resistance change ratio on the diaphragm and bridge surface where piezoresistor would be formed, and proposed the proper size and position of piezoresistor with which the sensitivity of sensor was increased. As the width of mass and boss was increased, the distance between piezoresistors was closed and the maximum value of resistance change ratio was decreased by the increase of the structure stiffness. And according to the increment of seismic mass size, the value of resistance change ratio is decreased by increase of the structure stiffness. Y directional piezoresistor is formed in the position of $100\mu{m}\;apart\;from\;cantilever\;edge\;and\;length\;of\;that\;is\;800\mu{m}$.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.173-179
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• 2001

The currently used semiconductor pressure sensors are piezoresistive and capacitive type. Especially, semiconductor micro pressure sensors have a great deal of attention because of their small size. However, its fabrication processes are difficult, so that its yield is poor. For the purpose of resolving the drawbacks of the existing silicon pressure sensors, we demonstrate a new type of pressure sensor using PSFET(pressure sensitive field effect transistor) and investigate its operational characteristics. We used PZT(Pb(Zr,Ti)$O_3$) as a pressure sensing material. PZT thin films were deposited on a gate oxide of MOSFET by an rf-magnetron sputtering method. To abtain the stable phase, perovskite structure, furnace annealing technique have been employed in PbO ambient. The sensitivity of the PSFET was 0.38 mV/mmHg.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.26-33
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• 1999

In order to examine the effect of beam location n the performance of bridge type piozoresistive silicon accelerometer, three sensors having different location of beams were simulated by FEN(finite element method) and fabricated by RIE(reactive ion etching) and KOH etching method using SDB(silicon direct bonding) wafer, Results of the FEM simulation present that the 1st resonace frequency and Z axis sensitivity of each sensor are identical but the 2nd, and the 3rd resonace frequency and X, Y axis sensitivity are different. Even though the 1st resonance frequency and Z axis sensitivity measured from fabricated sensors do not perfectly coincide with each other, all 3 type sensors present 180 ~ 220N/G of Z sensitivity at 5 V supply voltage and 1.3 ~ 1.7kHz of the 1st resonance frequency and about 2% of lateral sensitivity.

• Korean Journal of Oriental Medicine
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• v.12 no.2 s.17
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• pp.93-101
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• 2006

Pulse feeling is one of the most important diagnosis method in Oriental medicine. But it is not easy to make an objective and standardized diagnosis. In this study, we found how to quantify diagnosis. Specially dally the high practicality in clinic, we search some parameters especially well-related to floating and sinking pulse by statistic analysis. By extension, we find the pulse patterns of the floating and sinking pulse. We choose 15 subjects diagnosed as floating pulse and 15 subjects diagnosed as sinking pulse by oriental doctors. And their pulse signals were acquired by Pulse analyzer which has piezoresistive pressure sensor. For the quantification of the floating and sinking pulse, at first, we examined the parameters which were highly correlated with oriental doctor's diagnosis. And then we derived pulse patterns of the floating-sinking pulse from preprocessed signal and its ensemble average. We also looked trend variation (PH-Curve) between contact and pulse pressure. As a result, statistically there is the biggest difference between contact pressure, the maximum pulse pressure, diastolic area (Ad) and floating and sinking data. Through the PH-Curve, which represented the relationship between contact and pulse pressure, we could divide the floating and sinking pulse clearly. As a basic research of pulse diagnosis algorithm, we can contribute to select essential parameters in diagnosis algorithm And using these diagnosis method, we expect to find typical pulse patterns and some useful parameters about other pulses like slow/rapid, large/fine pulse and so on. We hope that this study will contribute pulse objectification.

• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.424-429
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• 2000

A novel differential pressure sensor has been developed with silicon beams embedded in a silicone rubber membrane. The transducer is usable for most applications involving exposure to harsh media. A piezoresistive differential pressure sensor using silicone rubber membrane has been fabricated on the selectively diffused (100)-oriented n/n+/n silicon substrates by a unique silicon micro-machining technique using porous silicon etching. The pressure sensitivity is about $0.66\;{\mu}V/mmHg$ and the non-linearity is less than 0.1%.

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.45-53
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• 1994

A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.131-145
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• 1992

This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.289-290
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• 2006

In general, atomic force microscope (AFM) used for metrological purpose has measuring range less than a few hundred micrometers. We design and fabricate an AFM with long measuring range of $200mm{\times}200mm$ in X and Y axes. The whole stage system is composed of surface plate, global stage, microstage. By combining global stage and microstage, the fine and long movement can be provided. We measure the position of the stage and angular motions of the stage by laser interferometer. A piezoresistive type cantilever is used for compact and long term stability and a flexure structure with PZT and capacitive sensor is used for Z axis feedback control. Since the system is composed of various actuators and sensors, a real time control program is required for the implementation of AFM. Therefore, in this work, we designed a multi-axis control program using a FPGA module, which has various functions such as interferometer signal converting, PID control and data acquisition with triggering. The control program achieves a loop rate more than 500 kHz and will be applied for the measurement of grating pitch and step height.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.1-5
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• 2008

In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensor's structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator($SiO_2$) layer of SOI(Si/$SiO_2$/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is $1000{\times}1000{\times}7\;{\mu}m^3$ and overall chip $3000{\times}3000{\times}7\;{\mu}m^3$. We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.62-68
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• 1990

On the basis of standard Si processing, the miniaturized piezoresistive-type Si pressure sensor with a chip size of $1.7{\times}1.7{mm^2}$ was fabricated and its operating characteristics were investigated. The sensor chip has a full-bridge type of 4 boron-diffused resistors which is formed on an $1.0{\times}1.0{mm^2}$ area, $20{\mu}m$ thick n-type Si diaphragm and finally, encapsulated under room temperature, 1 atm in order to measure a gauge pressure. The operating characteristics of this sensor were determined as a pressure sensitivity of $14.2{\mu}$V/VmmHg, a rated pressure range of 0~760 mmHg, and a maximum nonlinearity of $1.0{\%}$ FS at room temperature.