• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.116-120
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• 2011

The 0.98 ($Na_{0.44}K_{0.52})Nb_{0.84}O_3-0.02Li_{0.04}$ ($Sb_{0.06}Ta_{0.1})O_3-0.5$ mol%CuO ceramics have been fabircated by ordinary sintering technique and the effect of various calcination method on the electrical propertis and microstructure have been studied. It was observed that the various calcination method influenced the elelctrical properties and structural properties of the 0.98NKN-0.02LST-0.5 mol%CuO ceramics with the optimum piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) at room temperature of about $155{\rho}C/N$ and 0.349, respectively, from 0.98NKN-0.02LST-0.5 mol%CuO ceramics sample. The curie temperature ($T_c$) of this ceramic was found at $440^{\circ}C$. The 0.98NKN-0.02LST-0.5 mol%CuO ceramics are a promising lead-free piezoelectric ceramics.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.204-208
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• 2013

In this study, $KNbO_3$-substituted (Li,Na,K)(Nb,Sb,Ta)$O_3$ ceramics were investigated to develop Pb-free composition ceramics for multilayer actuator and energy harvester applications. The X-ray diffraction analysis indicated that all samples were pure perovskite phase and no secondary phase was found. A tetragonality as a function of $KNbO_3$ substitution showed the maximum value at 1.5 mol% $KNbO_3$ and then decreased. The SEM image analysis showed the maximum grain size of $3.14{\mu}m$ at 1.5mol% $KNbO_3$. In the composition ceramics with 1.5 mol% $KNbO_3$ sintered at $1,100^{\circ}C$, excellent properties of density= 4.75 $g/cm^3$, electromechanical coupling factor ($k_p$)= 0.50 and piezoelectric constant($d_{33}$)= 290 pC/N were obtained, respectively, suitable for piezoelectric actuator and energy harvester applications.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.70-73
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• 2017

The dielectric constant and loss of poling/non-poling was measured in the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ samples. The addition of $La^{3+}$ to the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ did not cause a large change in grain size. But the addition of $La^{3+}$ did show transition temperature, which shifted toward low temperature in the $Pb[(Mg_{1/3}Ta_{2/3})Zr]O_3$ systems. In addition, the dielectric and pyroelectric properties (${\varepsilon}{\sim}20000$, $p{\sim}0.03C/m^2K$) of this system using $La^{3+}$ have been greatly improved. Pyroelectrics $Pb_{0.97}La_{0.02}(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ system was found to have a relatively high ferroelectric FOMs ($F_V{\sim}0.035m^2/C$, $F_D{\sim}0.52{\times}10^{-4}Pa^{-1/2}$) at room temperature. Spontaneous polarization showed a value of $0.27{\sim}0.35C/m^2$ in the composition added to $La^{3+}$. The piezoelectric constant ($d_{33}=350{\sim}490pC/N$) and electromechanical coupling factor ($k_P=0.25{\sim}0.35$) are obtained in $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ compositions with $La^{3+}$ dopant.

• 한국세라믹학회지
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• 제41권1호
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• pp.30-35
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• 2004

스크린 인쇄법 및 PZT sol 처리의 복합공정을 적용하여 $30{\mu}m$ 두께의 PMW-PZT 후막을 Pt/$TiO_2$/$SiN_x$Si 기판위에 제작하였다. 그 결과 PZT sol 처리 횟수가 증가함에 따라 후막의 소결 밀도가 증가하고 전기적, 압전 특성의 증진되는 것을 관찰할 수 있었다. $800^{\circ}C$에서 소결한 10회 sol 처리한 PMW-PZT 후막은 745의 유전상수 및 155 pC/N의 $d_33$ 값을 나타내었다.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.263-269
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• 2017

A piezoelectric cantilever energy harvester (PCEH) driven in longitudinal (3-3) vibration mode was fabricated, and its electrical properties were evaluated by varying the resistive load. A commercial PZT piezoelectric ceramic with a high piezoelectric charge constant ($d_{33}$) of 520 pC/N and the interdigitated (IDT) electrode pattern was used to fabricate the PCEH driven in longitudinal vibration. The IDT Ag electrode embedded piezoelectric laminates were co-fired at $850^{\circ}C$ for 2 h. The 3-3 mode PCEH was successfully fabricated by attaching the piezoelectric laminates to a SUS304 elastic substrate. The PCEH exhibited a high output power of 3.8 mW across the resistive load of $100k{\Omega}$ at 100 Hz and 1.5 G. This corresponds to a power density of $10.3mW/cm^3$ and a normalized global power factor of $4.56mW/g^2{\cdot}cm^3$. Given the other PCEH driven in transverse (3-1) vibration mode, the 3-3 mode PCEH could be better for vibration energy harvesting applications.

• 한국진공학회지
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• 제8권4A호
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.33-38
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• 2003

Highly homogeneous PZT powder was prepared by a partial oxalate method using chemicals of (Z $r_{0.53}$ $Ti_{0.47}$) $O_2$, Pb(N $o_3$)$_2$and (COOH)$_2$ㆍ2$H_2O$. N $b_2$ $O_{5}$ addition effect on microstructure and electrical properties of PZT ceramics was investigated. When the precursors were calcined at 71$0^{\circ}C$, a single perovskite phase was obtained. After sintering at 110$0^{\circ}C$, X-ray diffraction Patterns showed coexistence of rhombohedral and tetragonal phases regardless of the N $b_2$ $O_{5}$ content. As the content of N $b_2$ $O_{5}$ increased, grain size decreased but sintered density increased. The electromechanical coupling factor of kp and the piezoelectric constant of $d_{31}$ increased linearly with the content of N $b_2$ $O_{5}$, and those values reached 0.7 and -200, respectively, when 1.2 mol% of N $b_2$ $O_{5}$ is added. is added.ded.

• 한국재료학회지
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• 제16권11호
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• pp.705-709
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• 2006

Nb was doped to Pb-free $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) by a solid state mixing process to form $(Bi_{0.5}Na_{0.5})Ti_{1-x}Nb_xO_3\;(x=0{\sim}0.05)$ (BNTNb) and its doping effects on ferroelectric and piezoelctric properties of BNT were investigated. The BNTNb solid solutions were formed up to x=0.01 with no apparent second phases while grain sizes decreased. As x increased, coercive field ($E_c$) and mechanical quality factor ($Q_m$) decreased but piezoelectric constant ($d_{33}$) increased, which indicates Nb acts as a donor for BNT.

• 한국전기전자재료학회논문지
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• 제27권1호
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• pp.14-17
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• 2014

In this study, lead-free Piezoelectric $(Na_{0.47}K_{0.47}Sr_{0.03}Ca_{0.03})(Nb_{0.94}Ti_{0.06})O_3$-0.1 $MnO_2$ ceramics were fabricated using mixed oxide method and the effects of various sintering temperature on the structural and electrical properties were investigated. For the $(Na_{0.47}K_{0.47}Sr_{0.03}Ca_{0.03})(Nb_{0.94}Ti_{0.06})O_3$-0.1 $MnO_2$ (NKN-SCT-$MnO_2$) ceramics sintered at temperatures of $1,025{\sim}1,100^{\circ}C$. The results indicated that all specimens were perovskite single phase formation without any second phase. It has been shown that relative density is increased to increasing sintering temperature. When the sintered temperature at $1,075^{\circ}C$, highest sintered density and maximum value of $4.45g/cm^3$. Average grain size is increased to increasing sintering temperature. The electromechanical coupling factor, dielectric constant, dielectric loss, d33 and curie temperature at the sintering temperature $1,075^{\circ}C$ of NKN-SCT-$MnO_2$ specimens were 0.22, 511, 0.033, 103 and $380^{\circ}C$, respectively.