• 제목/요약/키워드: photovoltaic devices

검색결과 345건 처리시간 0.035초

PV 시스템이 적용된 농어촌 주택 표준모델의 에너지 경제성 분석 (Energy Economic Analysis of Standard Rural House Model with PV System)

  • 이찬규;김우태
    • 한국산학기술학회논문지
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    • 제14권4호
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    • pp.1540-1547
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    • 2013
  • 국가 에너지 소비의 25%를 차지하는 건물에너지의 저감과 귀농인구의 증가에 따른 저에너지 친환경 주택모델의 수요 충족을 위해 EnergyPlus를 사용하여 PV 시스템이 적용된 농어촌 주택 표준모델의 건물에너지요구량을 기반으로 경제성 분석을 하였다. 2가지 타입의 PV 시스템이 적용되었고 발전된 전력을 건물의 냉방기기와 전기기기, 그리고 난방기기에 사용하였다. 계산에 사용된 주택의 연간 건물에너지요구량은 난방이 냉방에 비해 7배 크게 나타났다. Case1과 Case2로 나누어 PV 시스템의 경제성분석을 실시한 결과, Case1은 냉난방 및 전기기기에 발전된 전력을 사용하고 판매하는 것이, Case2는 냉방과 전기기기에만 전력을 사용하고 전량 판매하는 것이 경제적으로 유리한 것으로 판단된다. 하지만, 향후 전력 판매가격과 가스가격이 변동되면 결과는 달라질 수 있다. 초기투자비용은 Case1이 약 13년, Case2는 약 11년이 지나면 회수되는 것으로 나타났다. Case2가 초기설치비용이 비싸지만 회수기간이 지나면 Case1보다 약 3배 더 많은 이익을 얻을 수 있어 수명연한인 25년 이상 사용 시 경제성 측면에서 유리할 것으로 판단된다.

단일 스텝 스핀 코팅 방법에서 증발 제어 공정 변경에 따른 페로브스카이트 박막 물성 및 태양 전지 소자 특성 변화에 관한 연구 (Properties of Perovskite Materials and Devices Fabricated Using the Solvent Engineered One-Step Spin Coating Method)

  • 오정석;권남희;차덕준;양정엽
    • 새물리
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    • 제68권11호
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    • pp.1208-1214
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    • 2018
  • 단일 스텝 스핀 코팅 (one-step spin coating) 공정은 $MAPbI_3$ 페로브스카이트 (Perovskite) 박막의 결정화가 우수하여 고효율 태양 전지 제작이 가능하다. 이 공정의 핵심은 솔벤트 증발 제어 공정을 사용하는 것인데, 이는 스핀 코팅 시 $MAPbI_3$ 의 용해도를 증가 시킬 수 있는 용매를 투입하는 (dripping) 방식이다. 본 연구에서 용매의 양, 투입속도 및 시간에 따라 생성되는 $MAPbI_3$의 특성을 분석하고, 이렇게 만들어진 박막을 이용한 태양 전지 특성을 조사하였다. $MAPbI_3$ 박막 형성을 위하여 lead iodide, methyl-ammonium iodide를 N,N-dimethylformamide에 녹이고, N,N-dimethyl sulfoxide를 첨가하여 용액을 만들었으며, 증발 제어 공정을 위한 용매로 diethyl ether (DE)를 사용하였다. DE의 투입 조건에 따라 $MAPbI_3$ 박막 형성 시 핵 생성에 차이가 생기고, 이는 $MAPbI_3$의 결정화, 밀도 및 표면 상태에 영향을 미치는 것으로 나타났으며, 이에 따라 태양 전지의 효율이 달라지는 것을 알 수 있었다. 0.7 mL의 DE의 양, 3.03 mL/sec 투입 속도, 7초(스핀 코팅 시작 후 투입시간)의 솔벤트 증발 제어 공정 결과 최대 13.74% 효율을 가지는 태양 전지 소자를 재현성 있게 관측할 수 있었다.

카바졸과 페노시아진을 이용한 염료감응형 태양전지의 염료 합성과 광적특성 (Synthesis and Photovoltaic Properties of Dendritic Photosensitizers containing Carbazole and Phenothiazine for Dye-sensitized Solar Cells)

  • 김명석;정대영;김재홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.89.1-89.1
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    • 2010
  • Since Gratzel and co-workers developed a new type of solar cell based on the nanocrystalline $TiO_2$ electrode, dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies (11%), their easy manufacturing process with low cost production compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline $TiO_2$. The oxidized dye is reduced by the hole injection process from either the hole counter or electrolyte. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO gap, of dye molecule in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. To date, high performance and good stability of DSSC based on Ru-dyes as a photosensitizer had been widely addressed in the literatures. DSSC with Ru-bipyridyl complexes (N3 and N719), and the black ruthenium dye have achieved power conversion efficiencies up to 11.2% and 10.4%, respectively. However, the Ru-dyes are facing the problem of manufacturing costs and environmental issues. In order to obtain even cheaper photosensitizers for DSSC, metal-free organic photosensitizers are strongly desired. Metal-free organic dyes offer superior molar extinction coefficients, low cost, and a diversity of molecular structures, compared to conventional Ru-dyes. Recently, novel photosensitizers such as coumarin, merocyanine, cyanine, indoline, hemicyanine, triphenylamine, dialkylaniline, bis(dimethylfluorenyl)-aminophenyl, phenothiazine, tetrahydroquinoline, and carbazole based dyes have achieved solar-to-electrical power conversion efficiencies up to 5-9%. On the other hand, organic dye molecules have large ${\pi}$-conjugated planner structures which would bring out strong molecular stacking in their solid-state and poor solubility in their media. It was well known that the molecular stacking of organic dyes could reduce the electron transfer pathway in opto-electronic devices, significantly. In this paper, we have studied on synthesis and characterization of dendritic organic dyes with different number of electron acceptor/anchoring moieties in the end of dendrimer. The photovoltaic performances and the incident photon-to-current (IPCE) of these dyes were measured to evaluate the effects of the dendritic strucuture on the open-circuit voltage and the short-circuit current.

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multi-chromophore를 가지는 유기염료의 DSSC 광전변환거동 (Photovoltaic Properties of Dendritic Photosensitizers containing multi-chromophore for Dye-sensitized Solar Cells)

  • 김명석;천종훈;정대영;김재홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.117.2-117.2
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    • 2011
  • Since Gratzel and co-workers developed a new type of solar cell based on the nanocrystalline TiO2 electrode, dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies (11%), their easy manufacturing process with low cost production compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline TiO2. The oxidized dye is reduced by the hole injection process from either the hole counter or electrolyte. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO gap, of dye molecule in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. To date, high performance and good stability of DSSC based on Ru-dyes as a photosensitizer had been widely addressed in the literatures. DSSC with Ru-bipyridyl complexes (N3 and N719), and the black ruthenium dye have achieved power conversion efficiencies up to 11.2% and 10.4%, respectively. However, the Ru-dyes are facing the problem of manufacturing costs and environmental issues. In order to obtain even cheaper photosensitizers for DSSC, metal-free organic photosensitizers are strongly desired. Metal-free organic dyes offer superior molar extinction coefficients, low cost, and a diversity of molecular structures, compared to conventional Ru-dyes. Recently, novel photosensitizers such as coumarin, merocyanine, cyanine, indoline, hemicyanine, triphenylamine, dialkylaniline, bis(dimethylfluorenyl)-aminophenyl, phenothiazine, tetrahydroquinoline, and carbazole based dyes have achieved solar-to-electrical power conversion efficiencies up to 5-9%. On the other hand, organic dye molecules have large ${\pi}$-conjugated planner structures which would bring out strong molecular stacking in their solid-state and poor solubility in their media. It was well known that the molecular stacking of organic dyes could reduce the electron transfer pathway in opto-electronic devices, significantly. In this paper, we have studied on synthesis and characterization of dendritic organic dyes with different number of electron acceptor/anchoring moieties in the end of dendrimer. The photovoltaic performances and the incident photon-to-current (IPCE) of these dyes were measured to evaluate the effects of the dendritic strucuture on the open-circuit voltage and the short-circuit current.

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Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors

  • 박민수;김호성;양현덕;송진동;김상혁;윤예슬;최원준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.324-325
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    • 2014
  • Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

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무기 필러가 유연기판용 폴리에틸렌나프탈레이트 필름 치수안정성에 미치는 영향 (Effect of Inorganic Fillers on the Dimensional Stability of Poly(ethylene naphthalate) Film as a Flexible Substrate)

  • 김종화;김홍석;강호종
    • 폴리머
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    • 제36권6호
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    • pp.733-738
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    • 2012
  • 광전소자용 유연기판으로 사용되는 폴리에틸렌나프탈레이트 필름의 치수안정성 향상을 위하여 첨가된 유리 비드와 유리 섬유가 필름의 열팽창계수와 광투과도에 미치는 영향을 살펴보았다. 첨가된 무기 필러의 함량이 증가할수록 열팽창계수와 광투과도가 감소함을 알 수 있었다. 무기 필러의 크기, 입도 분포 또한 유연기판의 치수안정성과 광투과도에 영향을 미치는 주요한 요인임을 확인할 수 있었다. 본 연구 결과, 유연기판으로 사용 가능한 85% 이상의 광투과도를 유지하면서 폴리에틸렌나프탈레이트의 고유 치수안전성을 50% 이상 감소시키는 무기 필러의 함량은 5 wt% 내외임을 알 수 있었다.

The Effect of Thickness on Flexible, Electrical and Optical properties of Ti- ZnO films on Flexible Glass by Atomic Layer Deposition

  • 이우재;윤은영;권세훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.196.1-196.1
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    • 2016
  • TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.

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Improved Conductivities of SWCNT Transparent Conducting Films on PET by Spontaneous Reduction

  • 민형섭;김상식;이전국
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.43.2-43.2
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    • 2011
  • Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

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Speedy Two-Step Thermal Evaporation Process for Gold Electrode in a Perovskite Solar Cell

  • Kim, Kwangbae;Park, Taeyeul;Song, Ohsung
    • 한국재료학회지
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    • 제28권4호
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    • pp.235-240
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    • 2018
  • We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

CuO를 첨가한 (Ba0.5,Sr0.5)TiO3 세라믹의 소결온도와 전기적 특성의 연구 (Study on the Sintering Temperature and Electrical Properties of CuO Doped (Ba0.5,Sr0.5)TiO3 Ceramics)

  • 윤석우;이규탁;강이구;고중혁
    • 한국전기전자재료학회논문지
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    • 제23권6호
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    • pp.454-457
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    • 2010
  • The influence of CuO addition on what of the $(Ba,Sr)TiO_3$ ceramics was studied. The sintering temperature of $(Ba,Sr)TiO_3$ ceramics was lowered by the addition of CuO additives. The 1 - 5 wt% CuO were selected and employed as the sintering aids. Low-Temperature Co-fired Ceramic technologies are popular technologies used in the manufacture of microwave devices. In this study, crystalline and electrical properties of CuO doped $(Ba,Sr)TiO_3$ ceramics were investigated to determine the low temperature sintering properties. The addition of CuO to $(Ba,Sr)TiO_3$ lowered the sintering temperature from $1350^{\circ}C$ to $1150^{\circ}C$. The dependence of the sintering temperature shrinkage rate and mechanism of CuO doped $(Ba,Sr)TiO_3$ ceramics are investigated and discussed. Also, the crystalline structure of CuO - doped $(Ba,Sr)TiO_3$ ceramics is discussed by the X-ray diffraction (XRD) method.