• Journal of IKEEE
• /
• v.14 no.3
• /
• pp.199-204
• /
• 2010

In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000V.

• Journal of the Korean Society for Precision Engineering
• /
• v.31 no.11
• /
• pp.975-979
• /
• 2014

Transparent conductive films (TCF) with excellent electrical properties and high mechanical flexibility have been widely studied because of their potential for application in optoelectronic devices such as light-emitting diodes, paper displays and organic solar cells. In this paper, we report on low-resistance and high-transparent TCF for flexible device applications. To fabricate a high-resolution roll imprinted TCF, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of high-resolution roll imprinted on flexible film, the manufacture of Ag-nano paste which was filled into patterned film using a doctor blade process. Also, we was demonstrated with the successful application(ITO free organic photovoltaic) of the developed flexible TCF.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.424-430
• /
• 1996

The present processing sequence for solar cells is very elaborate and ads to the cost of the fabricated cells. This processing cost, which accounts for about 30% of the total cost, can be reduced if the many high temperature sequences can be reduced without significantly reducing the cells energy conversion efficiency. By using the spin-on glasses (SOG) in conjunction with the conventional tube furnace (CTF) or rapid thermal annealer (RTA), the many high temperature process can be reduced to only one. In order to achieve efficiencies similar to the standard high temperature sequences using the solid or liquid sources, some basic characterization of the groove diffusion is necessary to ascertain the its suitability. This paper describes the work done in diffusing the buried contact grooves using the phosphorus SOG.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.91-91
• /
• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.306.1-306.1
• /
• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.2
• /
• pp.88-93
• /
• 1994

We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.6
• /
• pp.1599-1606
• /
• 2008

Recently, new dispersed generation systems such as photovoltaic, wind power, fuel cell etc. are energetically interconnected and operated in the distribution systems, as one of the national projects for alternative energy with the provision against oil crisis. The technical guidelines on the interconnection of dispersed generation systems have been established and conducted positively. However, protection devices (Re-closer) in primary feeder of distribution system interconnected with photovoltaic generation may cause problems with mis-operation, and then many customers could have problems like an interruption. So, this paper presents the optimal method to minimize the impact of interruption, using both the symmetric method and MATLAB/SIMULINK. And, also this paper shows the effectiveness of proposed method by simulating at the real distribution systems.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1520-1521
• /
• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

• Current Photovoltaic Research
• /
• v.2 no.1
• /
• pp.18-27
• /
• 2014

Dye-sensitized solar cells (DSSCs), developed two decades ago, are considered to be an attractive technology among various photovoltaic devices because of their low cost, accessible dye chemistry, ease of fabrication, high power conversion efficiency, and environmentally friendly nature. A typical DSSCs consists of a dye-coated $TiO_2$ photoanode, a redox electrolyte, and a platinum (Pt)-coated fluorine-doped tin oxide (FTO) counter electrode. Among them, redox electrolytes have proven to be extremely important in improving the performance of DSSCs. Due to many drawbacks of iodide electrolytes, many research groups have paid more attention to seeking other alternative electrolyte systems. With regard to this, one-electron outer sphere redox shuttles based on cobalt complexes have shown promising results: In 2014, porphyrin dye (SM315) with the cobalt (II/III) redox couple exhibited a power conversion efficiency of 13% in DSSCs. In this review, we will provide an overview and perspectives of cobalt redox electrolytes in DSSCs.

• Advances in nano research
• /
• v.2 no.1
• /
• pp.23-56
• /
• 2014

The significant growth of the Si photovoltaic industry has been so far limited due to the high cost of the Si photovoltaic system. In this regard, the most expensive factors are the intrinsic cost of silicon material and the Si solar cell fabrication processes. Conventional Si solar cells have p-n junctions inside for an efficient extraction of light-generated charge carriers. However, the p-n junction is normally formed through very expensive processes requiring very high temperature (${\sim}1000^{\circ}C$). Therefore, several systems are currently under study to form heterojunctions at low temperatures. Among them, carbon nanotube (CNT)/Si hybrid solar cells are very promising, with power conversion efficiency up to 15%. In these cells, the p-type Si layer is replaced by a semitransparent CNT film deposited at room temperature on the n-doped Si wafer, thus giving rise to an overall reduction of the total Si thickness and to the fabrication of a device with cheaper methods at low temperatures. In particular, the CNT film coating the Si wafer acts as a conductive electrode for charge carrier collection and establishes a built-in voltage for separating photocarriers. Moreover, due to the CNT film optical semitransparency, most of the incoming light is absorbed in Si; thus the efficiency of the CNT/Si device is in principle comparable to that of a conventional Si one. In this paper an overview of several factors at the basis of this device operation and of the suggested improvements to its architecture is given. In addition, still open physical/technological issues are also addressed.