• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.450-452
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• 1996

In this paper, the authors propose a DC-DC boost converter of high efficiency by partial resonant switching mode, the switching devices in a proposed circuit are operated with soft switching and the control technique of those is simplified for switch to drive in constant duty cycle. The circuit has a merit which is taken to increase of efficiency, as it makes to a regeneration at input source of accumulated energy in snubber condenser without loss of snubber inconventional circuit. The proposed converter is deemed the most suitable for high power applications where the power switching devices are used.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.2.3-2.3
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• 2011

With increased interest in printed devices, various metal nano inks have been investigated as candidates materials for printed electrodes and wiring as well as conductive film substituting photo-lithography process. Recent advances in organic conductive polymer allow us to fabricate high performance printed device. Meanwhile, there was several attempts to fabricate conductive films by mixing conductive polymer with metal nano-particle or nano-wires. The presence of Ag nanowires in conductive polymer mixture have shown good potential in organic photovoltaic devices.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.9-10
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• 2006

Recent work in our laboratory has focused on the molecular and supramolecular engineering of conjugated polymers and oligomers for device applications, including light emitting diodes for displays and lighting, photovoltaic cells, and thin film transistors. A central finding is that the supramolecular structure of conjugated polymers can have a dominant influence on their properties and the performance of devices. Some major results include: highly efficient RGB light-emitting diodes from polymers and oligomers; high mobility n-channel polymer field effect transistors; ambipolar thin film transistors from copolymer semiconductors; and self-assembly and ambipolar charge transport in polymer nanowires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.114.2-114.2
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• 2014

The orientation of the constituent molecules in organic thin film devices can affect significantly their performance due to the highly anisotropic nature of ${\pi}$-conjugated molecules. We report here an angle dependent x-ray absorption study of the control of such molecular orientation using well-ordered interlayers for the case of a bilayer heterojunction of chloroaluminum phthalocyanine (ClAlPc) and C60. Furthermore, the orientation-dependent energy level alignment of the same bilayer heterojunction has been measured in detail using synchrotron radiation-excited photoelectron spectroscopy. Regardless of the orientation of the organic interlayer, we find that the subsequent ClAlPc tilt angle improves the ${\pi}-{\pi}$ interaction at the interface, thus leading to an improved short-circuit current in photovoltaic devices based on ClAlPc/C60. The use of the interlayers does not change the effective band gap at the ClAlPc/C60 heterointerface, resulting in no change in open-circuit voltage.

• Journal of Biosystems Engineering
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• v.40 no.3
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• pp.186-192
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• 2015

Background: Various solar energy collecting systems have been developed and analyzed for agricultural applications. They include solar thermal and electric devices such as solar crop dryers, solar water pumps, solar greenhouse heating, ventilation for livestock, solar aeration pumps, solar electricity, and many more. Purpose: This review provides the current status of research and development in the field as well as the solar energy systems that are currently in use in the agriculture sector across the globe. Review: Solar energy is the largest and cheapest energy resource on earth; one hour of solar radiation exceeds the complete global energy consumption in one year. The potential annual total solar radiation in South Korea is $3.58-5.4 kWh/m^2/day$. The available solar energy is sufficient for agricultural applications across the entire country. Conclusion: The scope of solar energy utilization in agricultural machinery engineering in South Korea and in other countries is promising.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.79-83
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• 2016

This research was analyzed thermal characteristics that was appointed disadvantage when smart LED driver ICs was packaged and we applied extracted thermal characteristics for optimal layout design. We confirmed reliability of smart LED driver ICs package without additional heat sink. If the package is not heat sink, we are possible to minimize package. For extracting thermal loss due to overshoot current, we increased driver current by two and three times. As a result of experiment, we obtained 22 mW and 49.5 mW thermal loss. And we obtained optimal data of 350 mA driver current. It is important to distance between power MOSFET and driver ICs. If thhe distance was increased, the temperature of package was decreased. And so we obtained optimal data of 3.7 mm distance between power MOSFET and driver ICs. Finally, we fabricated real package and we analyzed the electrical characteristics. We obtained constant 35 V output voltage and 80% efficiency.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.70-71
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• 2017

This paper presents a new cascaded boost multilevel converter topology for distributed generation (DG) systems. Most of DG systems, such as photovoltaic (PV), wind turbine and fuel cells, normally require the complex structure power converters, which makes the system expensive, complex and hard to control. However, the proposed converter topology can generate a much higher output voltage just by using the standard low-voltage switch devices and low voltage DC-sources in a simplified structure, also enhancing the reliability of the switch devices. Simulation and experimental results with a 1.2kW system are presented to validate the proposed topology and control method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.555-560
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• 2015

This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.