• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Wind and Structures
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• v.27 no.1
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• pp.41-57
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• 2018

Concentrated Solar Photovoltaic (CPV) is a promising alternative to conventional solar structures. These solar tracking structures need to be optimized to be competitive against other types of energy production. In particular, the selection of the structural parameters needs to be optimized with regards to the dynamic wind response. This study aims to evaluate the effect of the main structural parameters, as selected in the preliminary design phase, on the wind response and then on the weight of the steel support structure. A parametric study has been performed where parameters influencing dynamic wind response are varied. The study is performed using a semi-deterministic time-domain wind analysis method. Unsteady aerodynamic model is applied for the shape of the CPV structure collector at different configurations in conjunction with a consistent mass-spring-damper model with the corresponding degrees of freedom to describe the dynamic response of the system. It is shown that, unlike the static response analysis, the variation of the peak wind response with many structural parameters is highly nonlinear because of the dynamic wind action. A steel structural optimization process reveals that close attention to structural and site wind parameters could lead to optimal design of CPV steel support structure.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1645-1647
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• 1996

Polycrystalline CdTe thin films -have been studied for photovoltaic application because of their high absorption coefficient and optimal band gap energy (1.54 eV) for solar energy conversion. In this study, we prepared CdTe films using RF-magnetron sputtering method and investigated structural, optical and electrical properties with spectrophotometer, XRD, EDX, and resistivity meter. CdTe films at $200\;^{\circ}C$ showed a mixture of zinc blend (Cubic) and wurtzite (hexagonal) phase. On the other hand, the films at $400\;^{\circ}C$ showed highly oriented structure having hexagonal structure. The resistivity of CdTe films deposited on $SiO_2$ substrates was about $10_7\;{\Omega}cm$. The value of resistivity decreased with the increase of the substrate temperature. CdTe were sputtered on CdS thin films prepared by chemical bath deposition for the formation of the heterojunction. I-V characteristics of these cells were measured at a light density of $100mw/cm^2$, AM. 1.0. The present thin film solar cells showed a conversion efficiency of about 5%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.199-204
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• 2016

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.3
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• pp.407-412
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• 2012

This study investigated the process of thermal-induced growth of micro-crack developed at the crystalline solar cell using EL image, determined the output characteristic according to the pattern of micro-crack, analyzed the I-V characteristic according to the pattern of crack growth, and predicted the output value using simulation. The purpose of this study was, therefore, to investigate the process of thermal-induced growth of micro-crack developed at the early stage of PV module completion using EL image, to analyze the resulting decrement of output and predict the output value using simulation. It was observed that the crack grew increasingly by the thermal condition, and accordingly the lowering of output was accelerated. The output values of crack patterns with various direction were predicted using simulation, resulting in close I-V curve with only around 4% of error rate. It is considered that it is possible to predict the electric characteristic of solar cell module using only pattern of micro-crack occurred at solar cell based on our results.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.838-846
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• 2015

This paper deals with the modified modeling of PV system based on the PSCAD/EMTDC and optimal control method of customer voltages in real distribution system interconnected with the photovoltaic (PV) systems. In order to analyze voltage variation characteristics, the specific modeling of PV system which contains the theory of d-q transformation, current-control algorithm and sinusoidal PWM method is being required. However, the conventional modeling of PV system can only perform the modeling of small-scale active power of less than 60 [kW]. Therefore, this paper presents a modified modeling that can perform the large-scale active power of more than 1 [MW]. And also, this paper proposes the optimal operation method of step voltage regulator (SVR) in order to solve the voltage variation problem when the PV systems are interconnected with the distribution feeders. From the simulation results, it is confirmed that this paper is effective tool for voltage analysis in distribution system with PV systems.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1050-1051
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• 2015

In industry, there are several different controllers which can be implemented for power conditioning systems (PCS) such as proportional-resonant (PR), predictive deadbeat (PD), or proportional-integral (PI) controller. But there are not any comparison studies about these controllers. To investigate the differences between the three types of the controllers, this paper presents a comparative study of PR, PI, and PD controllers in a photovoltaic (PV) PCS. These controllers are designed mathematically and simulated for the comparative analysis. The PI controller is designed in the rotating reference (dq) frame. The PR and PD controllers are implemented in the natural (abc) reference frame. The PCS is composed of a DC-DC boost converter and a full bridge inverter. The filter of the PCS is an LCL filter including a passive damping resistor. The parameters of PCS are 3 kW, 25 kHz switching frequency and 220 V-60 Hz grid voltage. The comparison results between these controllers for the grid-connected PCS are clearly shown. The simulation results demonstrate the detailed characteristics of each controller for the PV PCS in order to choose the controller for individual target properly.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.7
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• pp.70-76
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• 2012

In general, the unidirectional power flow is normal in distribution feeders before activation of distributed power source such as PV. However, the interactive power flow is likely to occur in case of the power system under distributed generation. This interactive power flow can cause an unexpected effect on convectional protection coordination systems designed based only on the unidirectional power flow system. When the power line system encounters a problem, the interactive power flow can be a contributed current source and this makes the fault current bigger or smaller compared to the unidirectional case. The effect of interactive power flow is varied depending on the location of the point to ground fault, relative location of the PV, and connection method. Therefore it is important to analyse characteristics of fault current and interactive flow for various transformer connection and location of the PV. This paper proposes a method of improved protection coordination which can be adopted in the protective device for customers in distribution feeders interconnected with the PV. The proposed method is simulated and analysed using PSCAD/EMTDC under various conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.445.1-445.1
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• 2014

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next-generation solar cell because of their simple structure and low manufacturing cost. The $TiO_2$ film with thickness of $8{\sim}10{\mu}m$, which consists of nanoparticles, acts as both a scaffold with a high surface-to-volume ratio for the dye loading and a pathway to remove the electrons. However, charge carriers have to move across many particle boundaries by a hopping mechanism. So, one dimensional nanostructures such as nanotubes, nanorods and nanowires should improve charge carrier transportation by providing a facile direct electron pathway and lowering the diffusion resistance. However, the efficiencies of DSSCs using one dimensional nanostructures are less than the $TiO_2$ nanoparticle-based DSSCs. In this work, the patterned $TiO_2$ film with thickness of $3{\mu}m$ was deposited using photolithography process to decrease of electron pathway and increase of surface area and transmittance of $TiO_2$ films. Properties of the patterned $TiO_2$ films were investigated by various analysis method such as X-ray diffraction, field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.464.1-464.1
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• 2014

Among numerous material candidates, Cu(InxGa1-x)(SySe2-y) (CIGS) thin films have emerged as promising material candidates for thin film solar cell applications due to the high energy conversion efficiency and relatively low fabrication cost. The CIGS thin film solar cells consist of several materials, including Mo back contacts, ZnO-based window layers, and CdS buffer layers. All these materials have different crystal structures and contain quite distinct chemical elements, and hence the device characterization requires careful analyses. Most of all, identification of the major trap states resulting in the carrier recombination processes is a key step toward realization of high efficiency CIGS solar cells. We have carried out electrical investigations of CIGS thin film solar cells to specify the major trap states and their roles in photovoltaic performance. In particular, we have used the temperature-dependent transport characterizations and admittance spectroscopy. In this presentation, we will introduce some exemplary studies of DC and AC electrical characteristics of the CIGS solar cells.