• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.4
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• pp.806-812
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• 1988

When laser interference method is used to measure stress intensity factor with experiment, crack molded from teflon crack molding method is better than the crack manufactured through fatigue test. It is known that center distance between two indentations which is best for detecting the laser interference fringe order is about 80.mu.m with photodetector used in this research. Errors with measurement of stress intensity factor through laser interference are between 2% and 11%, therefore, experimental process and method developed in this research can be used with obtaining the more precision experimental data for stress intensity factors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.268-272
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• 2007

A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.

• Journal of the Korean Chemical Society
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• v.18 no.1
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• pp.47-49
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• 1974

A photometric probe that can be immersed in liquid has been prepared by sealing a phototransistor with a collimating lens in a glass tubing water tight. Due to the directional sensing property of the probe, it has been successfully used in photometric titrations. Thus, when the probe is immersed in the titrand solution vertically and a light source is placed underneath the beaker containing the titrand, the relative absorbance of the solution can be measured without shielding from the room light.

• Korean Journal of Optics and Photonics
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• v.2 no.4
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• pp.233-241
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• 1991

Structures, fabrication, and characteristics of top-surface-emitting GaAs four quantum well microlaser are described. The microlasers have good room-temperautre CW characteristivs. The maximum CW laser output is >3mW from a 30 $\mu\textrm{m}$ diameter microlaser and the maximum differential quantum efficiency is >70% from a 10 $\mu\textrm{m}$ diameter microlaser. Active surface emitting laser logic devices are designed and fabricated as a discrete version of a top-surface-emitting laser and heterojunction phototransistor. The active surface emitting laser logic device have high optical gain (>20 overall, >200 differential) and very high on/off ratio. Two-dimensional arrays of top-surface-emitting microlasers and active surface emitting laser logic devices will be critical elements for optical computing, photonic switching and neural network applications.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.50-56
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• 1994

Fiber-optic biosensor for the detection of organophosphorus compounds in a contaminated water was developed, which was the component of pesticides and agricultural agent. The detection principle of designed sensor was the pH variance induced by a reaction of acetylcholinesterase enzyme inhibited by organophosphorus compounds. The pH variance was detected by the optical system to measure the organophosphorus compounds. Litmus was selected as the pH-sensitive dye suitable to the enzyme reaction and a light source to be detected by the optical system. The enzyme entrapped in Ca-alginate gel was immobilized at the inner wall to maintain the high activity of enzyme and to be reused for a long period. The optical fiber was used to miniaturize and control remotely the sensor system. The He-Ne laser with 632 nm was selected as the light source to prevent light intensity fluctuation by the product. Cheap plastic optical fibers were used as the transmission part of the light and the phototransistor was used as the reception part of light based on the wavelength of He-Ne laser. The proposed fiber-optic biosensor has the linear analytical range of 0 ppm-1.5 ppm with response time of 5 minutes.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2441-2444
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• 2003

This paper describes fabrication of a micro cell counter integrated with an oxygen micropump and Sephadex G-25 beads counting experiment. The device utilized a phototransistor, microwindow, and light source of microscope for beads detection. Microheater and microchannel were used for pumping and guiding of beads to the microwindow. Counting capability of the device was tested with a peristaltic pump and the measured signals (${\sim}10\;mV$) with oscilloscope showed peak shape when beads passed the microwindow. Pumping of beads by the oxygen micropump was carried out by heating paraffin, which enveloped manganese dioxide (catalyst), to trigger the decomposition of hydrogen peroxide into water and oxygen. It lasted for 5 min with $7\;{\mu}l$ of wt. 30 % hydrogen peroxide. Beads counting by oxygen micropump showed peaks ($2{\sim}20\;mV$) with $30\;{\mu}l$ of beads sample and the number of peaks by magnitude was acquired.

• Journal of Industrial Technology
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• v.37 no.1
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• pp.27-31
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• 2017

In this paper, we have extended the research on the infrared sensor which has been limited to the plane. The reflection mechanism of the light on the curved surface is analyzed according to the curvature change and the emitted angle of photodiode and verified through experiments. The difference in the curvature causes a difference in the measurement distance, and also changes the intensity of the light coming into the phototransistor, thereby causing a difference in the output voltage. However, the difference in the output voltage due to the curvature change can be solved by adjusting the emitted angle of the photodiode to minimize the spot area formed on the curved surface regardless of the curvature. Therefore, it is possible to measure the distance by using the infrared sensor regardless of the curvature by aligning the photodiode to the center of the curved surface and adjusting the angle of the photodiode.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.125-126
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• 1998

Pulse conduction velocity is determined by areterial compliance, which is changed by lateral pressure of arterial wall. Hydrostatic pressure of the limb vessel is changed by body position, especially in elevated arm. The arterial pulse in the finger causes the blood volume to change, changing the optical density of the blood. Photoplethysmograph of index finger was obtained by LED and phototransistor. Pulse transmission time(PTT) was measured by the interval between the peak of ECG R wave and the peak of the finger plethysmogram. PTT was increased by upward position of arm, and decreased by downward position of the arm compared to horizontal position. This result suggests that relationship between finger plethysmography and postural change could be applied to evaluate clinical cardiovascular status.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1351-1355
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• 2018

The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.