• Title/Summary/Keyword: photosensitivity

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Photosensitivity in Hydroa Vacciniforme Is A Photo- Koebner Phenomenon Induced by Infiltration of Epstein-Barr Virus-Infected NK/T Cells

  • Keiji Iwatsuki;Xu, Zi-Gang;Mikio Ohtsuka;Takenobu Yamamoto;Kazuyasu Fujii;Kazuhide Tsuji
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.233-235
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    • 2002
  • Hydroa vacciniforme (HV) is a disease of Epstein-Barr virus (EBV)-associated NK/T cell lymphoproliferative disorder, and patients with severe HV-like eruptions have a high risk to progress to various EBV-related hematological complications. Photosensitivity in HV might be a 'photo-Koebner' phenomenon mediated by infiltration of EBV-infected NK/T cells.

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Realization of image pick up tube (영상감지소자의 구현)

  • Oh, Sang-Kwang;Park, Jung-Ok;Park, Ki-Cheol;Kim, Ki-Wan
    • Proceedings of the KIEE Conference
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    • 1987.07b
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    • pp.1402-1404
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    • 1987
  • Photoconductive target was fabricated to make vidicon available. In order for a vidicon to operate well, it is essential that the target have high photosensitivity, low image lag, and high resolution. In the vidicon mode analysis, photosensitivity of 0.8, image lag of 30%, resolution of 300 TV lines, and the S/N ratio of 30 dB at 10 lux illumination were measured.

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A Novel Photoresist based on Polymeric Acid Amplifier (고분자형 산 증식제에 기초한 새로운 포토레지스트의 연구)

  • Lee, Eun-Ju;Jeong, Yong-Seok;Lim, Kwon-Taek;Jeong, Yeon-Tae
    • Journal of the Korean Chemical Society
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    • v.48 no.1
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    • pp.39-45
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    • 2004
  • Acid amplifying copolymers are synthesized by the copolymerization of tert-butyl methacrylate(tBMA) with acid-sensitive functional group and 4-hydroxy-4'p-styrenesufonyloxyisopropylidene dicyclohexane(HSI) or 4-p-styrenesulfonyloxy-4'-tosyloxyisopropylidenedicyclohexane(STI) with acid-amplifying group as novel polymeric acid amplifying photoresists. Poly(HSI-co-tBMA) film and Poly(STI-co-tBMA) film as acid amplifying photoresists show reasonable thermal stability in the absence of an acid species. Poly(STI-co-tBMA) film exhibits 2X higher photosensitivity, whereas Poly(HSI-co-tBMA) film show 2X lower photosensitivity compared with ptBMA homopolymer. The attachment of acid-amplifying units to polymer backbones could provide a novel way to enhance the photosensitivity of acid-sensitive polymers depending on the structure of acid-amplifying units.

Synthesis and Photochemical Properties of Photosensitive Poly(vinyl butyral) with Azide Group (Poly(vinyl butyral)에 azide기가 도입된 감광성 고분자의 합성 및 감광특성)

  • Park, Lee Soon;Han, Yoon Soo;Oh, Hyun Shik;Im, Dae Hwan
    • Applied Chemistry for Engineering
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    • v.9 no.7
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    • pp.1053-1058
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    • 1998
  • Poly(vinyl butyral)s (PVB) with different butyral content were synthesized from poly(vinyl alcohol)(PVA) and n-butylaldehyde with acid catalyst. Bound butyral unit in PVB was determined by elemental analysis. Synthesized PVBs were reacted with p-azidobenzaldehyde to give photosensitive polymer with azidobenzene group(PVB-AZ). Bound photosensitive azidobenzene group in PVB-AZ was determined by UV spectrophotometry. The photosensitivity of PVB-AZ was compared with that of PVB/2,6-bis(p-azidobenzylidene)cyclohexanone(BAC) photosensitizer mixture system by gray scale method. Photosensitivity of PVB-AZ was higher than that of PVB/BAC mixture system. The photosensitivity of PVB-AZ was dependent on the developer used due to the solubility of PVB-AZ in a developer solvent.

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Erythrodermic Actinic Reticuloid Is Characterized by the Overspill of Oligoclonal CD8+ Lymphocytes Responsive To Ultraviolet Irradiation

  • Iwatsuki, Keiji;Ohtsuka, Mikio;Matsui, Takashi;Yamamoto, Takenobu;Fujii, Kazuyasu;Yamasaki, Osamu;Tsuji, Kazuhide
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.491-493
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    • 2002
  • Erythrodermic actinic reticuloid (EAR) is a photosensitive disorder characterized by dense lymphocytic infiltration in the sun-exposed areas and an increased number of atypical lymphocytes in the peripheral blood. We have reported 2 patients with EAR with circulating atypical lymphocytes and photosensitivity to both ultraviolet (UV) B and A. Although no clonal proliferation of T-cells was observed in the peripheral blood, CD8+ cells were increased in number in an oligoclonal fashion. A number of proliferating CD8+ cells were small, but most cells expressed bcl-2. These findings suggest EAR is a photosensitivity dermatitis characterized by the overspill of oligoclonal CD8+ lymphocytes responsive to UV irradiation.

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The Structural and Electrical Properties of CdSe Films Deposited at Low Temperature (저온에서 증착한 CdSe막의 구조적 및 전기적 특성)

  • Park, Ki-Cheol;Ma, Tae-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.10
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    • pp.776-781
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    • 2010
  • CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were $200^{\circ}C$, $0^{\circ}C$ and $-40^{\circ}C$. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ~1.72 eV regardless of substrate temperature. The resistivity of the films decreased to $0.5{\Omega}cm$ by lowering the substrate temperature to $-40^{\circ}C$. The CdSe/glass films prepared at $0^{\circ}C$ showed the highest photosensitivity among the films in this study.

High Performance Amorphous Silicon Oxide Thin Film Solar Cells Fabricated at Very Low Temperature (극저온에서 증착된 비정질실리콘 산화막 기반의 고성능 박막태양전지)

  • Kang, Dong-Won
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.10
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    • pp.1694-1696
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    • 2016
  • Present thin film solar cells with hydrogenated amorphous silicon oxide (a-SiO:H) as an absorber suffer from low fill factor(FF) of 61~64 [%] in spite of its benefits related to high open circuit voltage ($V_{oc}$). Since degraded quality of a-SiO:H absorber by alloying with oxygen can affect the FF, we aimed to achieve high photosensitivity by minimizing $CO_2$ gas addition. Improving optical gap($E_{opt}$) has been attained by strong hydrogen dilution combined with lowering substrate temperature down to 100 [$^{\circ}C$]. Small amount of the $CO_2$ was added in order to disturb microcrystalline formation by high hydrogen dilution. The developed a-SiO:H has high photosensitivity (${\sim}2{\times}10^5$) and high $E_{opt}$ of 1.85 [eV], which contributed to attain remarkable FF of 74 [%] and high $V_{oc}$ (>1 [V]). As a result, high power conversion efficiency of 7.18 [%] was demonstrated by using very thin absorber layer of only 100 [nm], even though we processed all experiment at extremely low temperature of 100 [$^{\circ}C$].

Fabrication and Properties of Photoconductive Multilayer Using Se and $Sb_2S_3$ (Se와 $Sb_2S_3$를 이용한 광도전막의 제작과 그 특성)

  • 오상광;박기철;김건일;김기완
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.4
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    • pp.646-651
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    • 1987
  • The photoconductive multilayer composed of glassy, porous, and fine-grained layers was fabdricated with Se and Sb2S3 by vacuum evaporation in order to be used as vidicon target. And its electrical, optical properties were investigatee. The fabrication conditions were as follow: the glassy layer was first deposited to have the thickness of 6500 \ulcornerat the deposition rate of 250\ulcornersec. High photosensitivity(\ulcorner=1) was obtained but its shortcoming was high dielectric constant. Therefore, the porous layer was added to lower dielectric constant and had 7500\ulcornerthick in the argon gas ambikent of 7x10-\ulcorner And the fine-grained layer was formed to prevent secondary electron emission and obtain good resolution. Its thickness was about 1700\ulcorner For the given vidicon target, the light transfer characteristic, that is, photosensitivity (\ulcorner) was measured to be 0.8 at the applied voltage of 25V. The spectral sensitivity was quite similar to that of the human eyes.

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Latent Charge Erasing Technique for a-Se Digital X-ray Detector (비정질 셀레늄 디지털 X선 검출기에 대한 잔류 전하 제거 기술)

  • Kang, S.S.;Choi, J.Y.;Park, J.K.;Cho, J.W.;Moon, C.W.;Choi, H.K.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.505-508
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    • 2001
  • Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.5 %, and the removal effect of latent charge by using light erase method was its 95.5 %.

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