• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.706-711
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• 1986

The AgGa1-xInxSe2 films are deposited by a flash evaporation method onto pyrex glass substrates at temperatures between 5\ulcorner and 360\ulcorner. The single crystalline films which have X-ray diffraction peak of only (112) plane are preared at substrate temperature above 360\ulcorner. The prepared AgGa 1-xInxSe2 films are high photosensitive. The temperature coefficients of energy gap are found to be (-1.2~-4.0)x10**4 eV/K and (-3.1~-5.2)x10**-4 eV/K, and that of peak energy of spectral photoresponse curve are found to be (-1.1 ~ -3.0)x10**-4 eV/K(50K~100K) and (-2.4~-5.1)x10**-4 eV/K(100K~300K).

• Progress in Medical Physics
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• v.33 no.2
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• pp.11-24
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• 2022

X-ray detection has widely been applied in medical diagnostics, security screening, nondestructive testing in the industry, etc. Medical X-ray imaging procedures require digital flat detectors operating with low doses to reduce radiation health risks. Recently, metal halide perovskites (MHPs) have shown great potential in high-performance X-ray detection because of their attractive properties, such as strong X-ray absorption, high mobility-lifetime product, tunable bandgap, low-temperature fabrication, near-unity photoluminescence quantum yields, and fast photoresponse. In this paper, we review and introduce the development status of new perovskite X-ray detectors and imaging, which have emerged as a new promising high-sensitivity X-ray detection technology. We discuss the latest progress and future perspective of MHP-based X-ray detection in medical imaging. Finally, we compare the conventional detection methods with quantum-enhanced detection, pointing out the challenges and perspectives for future research directions toward perovskite-based X-ray applications.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.22-29
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• 2011

An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.354.2-354.2
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• 2016

Mycosporine-like amino acids (MAAs) are small secondary metabolites produced by organisms that live in environments with high volumes of sunlight, is an important group of novel bioactive compounds having immense biotechnological poten-tials due to their UV screening properties and Polypyrrole (PPy) is a type of organic polymer formed by polymerization of pyrrole. A novel composite nanofilm (~60 nm) of mycosporine-like amino acid (MAA) and polypyrrole is synthesized by interfacial polymerization technique. This composite nanofilm is conductive and has strong photoresponse. A photoelectric UV sensor is fabricated by depositing the composite film onto a silicon chip. This UV sensor shows good sensitivity, selectivity and stability for UV detection.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.387.1-387.1
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• 2016

Transparent materials are necessary for most photoelectric devices, which allow the light generation from electric energy or vice versa. Metal oxides are usual materials for transparent conductors to have high optical transmittance with good electrical properties. Functional designs may apply in various applications, including solar cells, photodetectors, and transparent heaters. Nanoscale structures are effective to drive the incident light into light-absorbing semiconductor layer to improve solar cell performances. Recently, the new metal oxide materials have inaugurated functional device applications. Nickel oxide (NiO) is the strong p-type metal oxide and has been applied for all transparent metal oxide photodetector by combining with n-type ZnO. The abrupt p-NiO/n-ZnO heterojunction device has a high transmittance of 90% for visible light but absorbs almost entire UV wavelength light to show the record fastest photoresponse time of 24 ms. For other applications, NiO has been applied for solar cells and transparent heaters to induce the enhanced performances due to its optical and electrical benefits. We discuss the high possibility of metal oxides for current and future transparent electronic applications.

• Publications of The Korean Astronomical Society
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• v.32 no.1
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• pp.355-357
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• 2017

For future space IR missions, such as SPICA, it is crucial to establish an experimental method for evaluating the performance of mid-IR detectors. In particular, the wavelength dependence of the sensitivity is important but difficult to be measured properly. We are now preparing a testing system for mid-IR Si:As/Si:Sb detectors on SPICA. We have designed a cryogenic optical system in which IR signal light from a pinhole is collimated, passed through an optical filter, and focused onto a detector. With this system, we can measure the photoresponse of the detector for various IR light using optical filters with different wavelength properties. We have fabricated aluminum mirrors which are adopted to minimize thermal distortion effects and evaluated the surface figure errors. The total wavefront error of the optical system is $1.3{\mu}m$ RMS, which is small enough for the target wavelengths ($20-37{\mu}m$) of SPICA. The point spread function measured at a room temperature is consistent with that predicted by the simulation. We report the optical performance of the system at cryogenic temperatures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.126-136
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• 1997

6H-SiC UV photodiodes with $p^+$/n/n mesa structure were fabricated. The photocurrents of the photodiodes were measured in the wavelength range of 200~600 nm. The photocurrents were sensitive to ultraviolet radiation of 200~500 nm, and come to the maximum value at 260 nm. The quantum efficiency was calculated by using the diffusion model of minority carriers, and compared with the distribution of the photocurrent measured as a function of wavelength each other. The photocurrents of the 6H-SiC photodiode were explained by the diffusion model of the minority carriers which contained the optical absorption of the depletion region as well as the other layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.41-41
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• 2003

비정질 실리콘 박막은 단결정 실리콘에 비해 저가이고 저온형성이 가능하여, 대면적/고효율의 실리콘 박막 태양전지 제작에 응용되고 있다. 태양전지에 적용하기 위해서는 우수한 암전류 및 광전류 특성을 나타내야 하고, 광학적 밴드 갭 특성 또한 중요하다. 본 연구에서는 HDP(High Density Plasma) PECVD 장비를 이용하여 나노결정립 및 비정질 실리콘 박막을 형성하고, 각 박막의 전기적, 광학적 특성을 측정, 평가하였다. 나노결정립 및 비정질 실리콘 박막의 전기적 특성은 Keithley 4200을 이용하여 암전류를 특성을 측정하였고, Solar Simulator를 이용하여 AM1.5, 100mW/$\textrm{cm}^2$ 조건에서 광전류 특성을 측정하였다. 또한, Spectrometer를 이용하여 박막의 투과율을 측정하여 Tauc Plot을 통해 광학적 밴드 갭을 계산하였다. 본 연구에서 형성된 비정질 실리콘 박막은 -$10^{6}$의 우수한 Photoresponse($\sigma$$_{ph}$ $\sigma$$_{d}$) 특성을 나타내었다. 또한, 비정질 실리콘 박막 내에 나노결정립이 형성됨에 따라 암전류는 증가하고, 광학적 밴드 갭도 증가하는 것을 알 수 있었다. 이렇게 밴드 갭이 증가된 나노결정립 실리콘 박막은 태양전지의 Window 층에 적용하면 효율 증가에 크게 기여할 것으로 판단된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.861-864
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• 2004

본 연구에서는 Ta이 도핑된 $TiO_2$와 $Au/TiO_2$ nanocomposite 박막을 co-sputtering법으로 제작하였다. Ta-doped $TiO_2$ 박막은 금흥석(rutile)에서 아나타제 상으로 변하는 구조를 유도하는 고용체를 형성했다. $Au/TiO_2$ nanocomposite film의 경우에는, 지름이 약 15 nm인 Au particles들이 $TiO_2$ matrix에 균질하게 분포되었다. Ta가 도핑된 $TiO_2$ 전극과 $Au/TiO_2$ 나노 콤포사이트 전극의 anodic photocurrents가 UV뿐만 아니라 가시광선 영역에서도 관찰되었다. Ta이 도핑된 $TiO_2$ 전극과 $Au/TiO_2$ 나노 콤포사이트 사이의 가시광선 영역에서 photoresponse는 계면 상태로 부터의 bandgap의 감소와 전자의 photoexcitation 때문이다.