• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.38-39
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• 2003

The GaAs semiconductor whispering gallery modes, produced in the peripheral Rayleigh band region of W／sub Rayleigh／ ＝ (${\Phi}$／2)( 1-n／sub eff／n), exhibit novel properties of ultralow thresholds open to nano-ampere regime associated with photonic quantum ring (PQR) production (Fig 1 (a)). The PQR phenomena are associated with a photonic field-driven phase transition of quantum well(QW)-to-quantum wire (QWR) and hence the photonic (non-de Broglie) quantum corral effects, on the Rayleigh cavity confined carriers in dynamic steady state, occur as schematically shown in Fig 1. (omitted)

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.17.2-17.2
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.26-27
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• 2001

마이크로 디스크의 위스퍼링 갤러리 모드를 응용한 광양자테(Photonic Quantum Ring; PQR) 레이저가 지닌 특성 중 레이저 출력면의 각도에 따라 각각 다른 파장의 빛을 방출하므로, 각도에 따른 각 파장별 필터를 이용하면 각도 감지센서, 공간형 WDM 등 여러 가지 용도에 응용할 수 있을 것으로 기대된다. 그림 1은 광섬유를 이용하여 소자의 각도에 따른 발진파장을 측정하기 위한 장치도이다. (중략)

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.308-309
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• 2004

• Journal of Convergence for Information Technology
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• v.10 no.6
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• pp.28-34
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• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Journal of Digital Convergence
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• v.19 no.11
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• pp.341-349
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• 2021

We studies to verify results similar to those of previous experiments, and their potential as a lighting device through optical characteristics experiments and resonance and optical characteristics simulations of array devices. The photonic quantum ring (PQR) device having a mesa diameter of 40 ㎛ and an internal hole diameter of 3 ㎛ was fabricated. Through the near-field observation of the fabricated device, it was found that the PQR device operates even at ㎂, and also that the mesa and hole devices are driven independently of each other. As a result of measuring the wavelength spectrum of the device according to the location, the coupling phenomenon due to mesa and holes was confirmed.

• ETRI Journal
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• v.26 no.1
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• pp.1-6
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• 2004

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and ${\sqrt{T}}$-dependent thermal red shifts. We observed uniform bottom emissions from a 1-kb smart pixel chip of a $32{\times}32$ InGaAs PQR laser array flip-chip bonded to a 0.35 ${\mu}m$ CMOS-based PQR laser driver. The PQR-CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.

• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.190-191
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• 1998

• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.204-205
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• 1998

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.