• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.76-82
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• 1998

As the minimum feature size of a semiconductor chip gets smaller, the inevitable distortion of patterned image by optical lithography becomes the limiting factor in the mass production of VLSI. The optical proximity correction (OPC), which corrects pattern distortion that originates from the resolution limit of optical lithography, is becoming indispensable technology. In this paper, we describe a program that corrects optical proximity effect and thus finds the optimum mask pattern with a Monte-Carlo method. The program was applied to real memory cell patterns to produce mask patterns that generate image patterns closer to object images than original mask patterns, and increase of process margin is expected, as well.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.9 s.180
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• pp.2371-2380
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• 2000

In this paper, we developed the proximity exposure system with the vertical structure of glass and mask stage to minimize the mask's warp caused by the pull of gravity. This system, which canirradiate the ultra violet through 1440 H 850 $\textrm{mm}^2$ and 1330X 1015 $\textrm{mm}^2$ exposure area, has the followingcharacteristics. The glass stage can be inclined by 80 degrees at vertical structure to load substrate withsafety on it. When the glass stage is the vertical state, the gap control, alignment control and exposureof ultra violet are executed. So, it enhances the pattern uniformity by minimizing the mask's warp. Theglass stage can also control the gap between the mask and the substrate by the coarse and fine motioncontrol. The mask stage can adjust the posture of photomask to the position of substrate by imageprecessing method. The galss stage for the gap control and the mask stage for the alignment aredesigned independently for each function.

• Journal of Sensor Science and Technology
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• v.24 no.3
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• pp.155-158
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• 2015

In this paper, in-situ heat cooling with temperature monitoring is reported to solve thermal issues in electric vehicle (EV) batteries. The device consists of a thick graphene cooler on top of the substrate and a platinum-based resistive temperature sensor with an embedded heater above the graphene. The graphene layer is synthesized by using chemical vapor deposition directly on the Ni layer above the Si substrate. The proposed thick graphene heat cooler does not use transfer technology, which involves many process steps and does not provide a high yield. This method also reduces the mechanical damage of the graphene and uses only one photomask. Using this structure, temperature detection and cooling are conducted simultaneously using one device. The temperature coefficient of resistance (TCR) of a $1{\times}1mm^2$ temperature sensor on 1-$\grave{i}m$-thick graphene is $1.573{\times}10^3ppm/^{\circ}C$. The heat source cools down $7.3^{\circ}C$ from $54.4^{\circ}C$ to $47.1^{\circ}C$.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Journal of the Korean Graphic Arts Communication Society
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• v.26 no.2
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• pp.45-54
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• 2008

We have manufactured a photoresist which has excellent dispersity and good applying property due to 330 cps of viscosity for environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed with mask by UV-LED light source so we could manufacture the photoresist which proper for the UV light source. And it was developed by air spray with $1.7\;kgf/cm^2$ of injection pressure. Because of the excellence of power and resolution of the UV-LED light sourse, the pencil hardness and solvent resistance of curing photoresist film were excellent as those of conventional photoresist film. Moreover the $100{\mu}m$-width stripe image which has sharp edges was formed. So we confirmed a possibility of dry development process by air spray method.

• Journal of the Korean Graphic Arts Communication Society
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• v.26 no.2
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• pp.55-64
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• 2008

We designed a UV-LED exposure system which has 365nm dominant wavelength due to the environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with UV-LED light source. Then it was developed by air spray with $1.7\;kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were excellent as those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making. was $100{\mu}m$, so we could establish the possibility of environment-friendly maskless screen plate making technology. But the sharpness of the patterns were ${\pm}40{\mu}m$ since the exposure system for maskless plate making has weak light intensity and the diffusion of light.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.251-255
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• 2019

We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.546-551
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• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.447-452
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• 2013

Recently, products that a have 3-dimensional(3D) micro structure have been in wide use. To fabricate these 3D micro structures, several methods, such as stereo lithography, reflow process, and diffuser lithography, have been used. However, these methods are either very complicated, have limitations in terms of patterns dimensions or need expensive components. To overcome these limitations, we fabricated various 3D micro structures in one step using a pair of diffusers that diffract the incident beam of UV light at wide angles. In the experiment, we used positive photoresist to coat the Si substrate. A pair of diffusers(ground glass diffuser, opal glass diffuser) with Gaussian and Lambertian scattering was placed above the photomask in the passage of UV light in the photolithography equipment. The incident rays of UV light diffracted twice at wider angles while passing through the diffusers. After exposure, the photoresist was developed fabricating the desired 3D micro structure. These micro structures were analyzed using FE-SEM and 3D-profiler data. As a result, this dual diffuser lithography(DDL) technique enabled us to fabricate various microstructures with different dimensions by just changing the combination of diffusers, making this technology an efficient alternative to other complex techniques.

• Macromolecular Research
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• v.15 no.4
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• pp.348-356
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• 2007

The aim of this study was to fabricate a submicro-and micro-patterned fibronectin coated wafer for a cell culture, which allows the positions and dimensions of the attached cells to be controlled. A replica molding was made into silicon via a photomask in quartz, using E-beam lithography, and then fabricated a polydimethylsiloxane stamp using the designed silicon mold. Hexadecanethiol $[HS(CH_2){_{15}}CH_3]$, adsorbed on the raised plateau of the surface of polydimethylsiloxane stamp, was contact-printed to form self-assembled monolayers (SAMs) of hexadecanethiolate on the surface of an Au-coated glass wafer. In order to form another SAM for control of the surface wafer properties, a hydrophilic hexa (ethylene glycol) terminated alkanethiol $[HS(CH_2){_{11}}(OCH_2CH_2){_6}OH]$ was also synthesized. The structural changes were confirmed using UV and $^1H-NMR$ spectroscopies. A SAM terminated in the hexa(ethylene glycol) groups was subsequently formed on the bare gold remaining on the surface of the Aucoated glass wafer. In order to aid the attachment of cells, fibronectin was adsorbed onto the resulting wafer, with the pattern formed on the gold-coated wafer confirmed using immunofluorescence staining against fibronectin. Fibronectin was adsorbed only onto the SAMs terminated in the methyl groups of the substrate. The hexa (ethylene glycol)-terminated regions resisted the adsorption of protein. Human dermal fibroblasts (P=4), obtained from newborn foreskin, only attached to the fibronectin-coated, methyl-terminated hydrophobic regions of the patterned SAMs. N-HDFs were more actively adhered, and spread in a pattern spacing below $14{\mu}m$, rather than above $17{\mu}m$, could easily migrate on the substrate containing spacing of $10{\mu}m$ or less between the strip lines.