• 한국재료학회지
• /
• 제4권6호
• /
• pp.620-625
• /
• 1994

자자들은 최근 비고용 Cu-Ta계의 기계적 합금화(Mechanical Alloying) 방법을 이용하여 이계에 있어서 비정질상의 형성에 대한 구조적 확인을 중성자 회절과 EXAFS(Extended X-ray Absorption Fine Structure)의 실험결과로 부터 얻었다. Cu-Ta계와 같이 혼합 엔탈피(Heat of Mixing: $\Delta$ Hmix)가 정인계에 있어서 비정질상 형성에 대한 연구는 구조적인 측면 뿐만 아니라. 시료의 전자물성에 대해서도 많은 연구가 되어야만 할 것으로 사료된다. 따라서 본 논문에서는 120시간 MA방법으로 제작한 시료에 대하여 초전도 천이온도 및 X선 광전자분광 실험에서 얻은 가전자대 구조의 전자물성을 측정하고, 그 결과로부터 이종원자 Cu와 Ta간의 결합은 화하결합에 의한 생성임을 확인하였는데, 이들 결과로부터 120시간 MA를 행하여 얻어진 시료는 확실하게 비정질 합금임을 알 수 있었다.

• Progress in Superconductivity
• /
• 제10권2호
• /
• pp.69-73
• /
• 2009

For extraction of the self-energy from the angle resolved photoemission spectroscopy(ARPES) experiments for the cuprate superconductors, the momentum distribution curve(MDC) analysis is commonly used. There are two requirements for this method to work: the self-energy is momentum independent and the bare electron dispersion is known. Assuming that the first condition is satisfied in the cuprates, we checked the effects of the bare dispersion on the extracted self-energy. For this, we first generated the ARPES intensity using the tight-binding band of the B2212 by solving the Eliashberg equation. We then extracted the self-energy from the theoretically generated ARPES intensity using the linear and quadratic dispersions. By choosing the bare dispersion such that the Kramer-Kronig relation is best satisfied between the real and imaginary parts of the extracted self-energy, we confirmed that the quadratic dispersion is better for the bare electron band for Bi2212. The self-energy can be reasonably extracted from the ARPES experiments using the MDC analysis.

• Progress in Superconductivity
• /
• 제12권2호
• /
• pp.99-103
• /
• 2011

We performed angle resolved photoelectron spectroscopy (ARPES) studies on Ru doped $BaFe_2As_2$ with various Ru contents. Ru, which is doped into a parent compound $BaFe_2As_2$ and substitute Fe, does not donate or accept electrons. However, it induces superconductivity. From ARPES data along the high symmetry cuts and Fermi surface maps, we investigate the electron correlation and carrier density at the Fermi level. We observe that the Fermi velocity increases with Ru doping, suggesting reduction in electron correlation. In addition, we address issues on local vs. itinerant pictures for the magnetism in $BaFe_2As_2$.

• 한국고분자학회:학술대회논문집
• /
• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
• /
• pp.238-238
• /
• 2006

Through ultra-violet photoemission spectroscopy in-situ experiment, 0.67 eV energy barrier between 1-hexadecanethiol (HDT)-modified gold and pentacene was observed, which was 0.03 eV smaller than the energy barrier between bare gold and pentacene despite HDT modified gold had 0.8 eV lower work function than that of bare gold. This result is opposed to the idea that increasing the work function a metal decreases the energy barrier. This can be explained by two factors. One is the absence of interface dipole, which is observed in pentacene deposited on gold. The other is reduced ionization energy which can be explained through polarization energy or electronic splitting of molecular orbital with more crystalline structure observed through X-ray diffraction patterns.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.78-78
• /
• 2010

The Adsorption structures of phenylalanine on Ge(100) surface have been investigated as a function of coverage using high-resolution photoemission spectroscopy (HRPES) and density functional (DFT) calculation. To converge these experimental and theoretical conclusion, we systematically performed HRCLPES measurements and DFT calculation for various coverage in the adsorption structures of phenylalanine molecules on the Ge(100) surface. In this study, we found two different adsorption structure as a function of coverage in phenylalanine on Ge(100), monitoring three core level spectra (Ge 3d, C 1s, N 1s, and O 1s) using HRPES Through analysis of the binding energies, we confirmed that O-H dissociated and N dative-bonded structure emerges at low coverage (0.10 ML), which is the same to the result of glycine and alanine on Ge(100) system, whereas O-H dissociation structure also appears at higher coverage. Moreover, we observed the shape of phenyl group being included in phenylalanine is changed from flat to tilting structure at final state using DFT calculation. Through the spectral analysis for phenylalanine, we will demonstrate variation of coverage dependent structural change for phenylalanine on Ge(100) surface using experimental (HRPES) and theoretical studies (DFT calculation).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.182-182
• /
• 2011

We investigated the adsorption structures of serine on a Ge(100) surface by core-level photoemission spectroscopy (CLPES) in conjunction with density functional theory (DFT) calculations. The adsorption energies calculated using DFT methods suggested that four of six adsorption structures were plausible. These structures were the "O-H dissociated-N dative bonded structure", the "O-H dissociation bonded structure", the "Om-H dissociated-N dative bonded structure", and the "Om-H dissociation bonded structure" (where Om indicates the hydroxymethyl oxygen). These structures are equally likely, according to the adsorption energies alone. The core-level C 1s, N 1s, and O 1s CLPES spectra confirmed that the carboxyl oxygen competed more strongly with the hydroxymethyl oxygen during the adsorption reaction, thereby favoring formation of the "O-H dissociated-N dative bonded" and "O-H dissociation bonded" structures at 0.30 ML and 0.60 ML, respectively. The experimental results were corroborated theoretically by calculating the reaction pathways leading to the two adsorption geometries. The reaction pathways indicated that the "O-H dissociated-N dative bonded structure" is the major product of serine adsorption on Ge(100) due to comparably stable adsorption energy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.9-9
• /
• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• 센서학회지
• /
• 제22권2호
• /
• pp.105-110
• /
• 2013

We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

• Bulletin of the Korean Chemical Society
• /
• 제35권2호
• /
• pp.581-586
• /
• 2014

The most stable adsorption structures and their corresponding energies of 4-pyridone, 4-hydroxypyridine, 2-pyridone and 2-hydroxypyridine have been investigated by Density Functional Theory (DFT) calculation and high-resolution photoemission spectroscopy (HRPES). We confirmed that between the two reaction centers of 4- and 2-pyridone, only O atom of carbonyl functional group can act as a Lewis base while both the two reaction centers of 4- and 2-hydroxypyridine (tautomers of 4- and 2-pyridone) can successfully function as a Lewis base. On the other hand, owing to their molecular structures, there is a remarkable difference between the adsorption structures of 4- and 2-hydroxypyridine. Through the analysis of the N 1s and O 1s core level spectra obtained using HRPES, we also could corroborate that two different adducts coexist on the surface at room temperature due to their activation energy investigating the coverage dependent variation of bonding configurations when these molecules are adsorbed on the Ge(100) surface.

• Bulletin of the Korean Chemical Society
• /
• 제34권4호
• /
• pp.1055-1060
• /
• 2013

The adsorption structures of threonine on the Ge(100) surface were investigated using core-level photoemission spectroscopy (CLPES) in conjunction with density functional theory (DFT) calculations. CLPES measurements were performed to identify the experimentally preferred adsorption structure. The preferred structure indicated the relative reactivities of the carboxyl and hydroxymethyl groups as electron donors to the Ge(100) surface during adsorption. The core-level C 1s, N 1s, and O 1s CLPES spectra indicated that the carboxyl oxygen competed more strongly with the hydroxymethyl oxygen during the adsorption reaction. Three among six possible adsorption structures were identified as energetically favorable using DFT calculation methods that considered the inter- and intra-bonding configurations upon adsorption onto the Ge(100) surface. These structures were O-H dissociated N dative inter bonding, O-H dissociated N dative intra bonding, O-H dissociation bonding. One of the adsorption structures: O-H dissociated N dative inter bonding was predicted to be stable in light of the transition state energies. We thus confirmed that the most favorable adsorption structure is the O-H dissociated N dative-inter bonding structure using CLPES and DFT calculation.