• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.169-169
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• 2014

Interfacial electronic structure of bathocuproine and Al was investigated using in-situ photoemission spectroscopy and density functional theory (DFT) calculations. Bathocuproine is used for exciton blocking and electron transport material in organic photovoltaics and Al is typical cathode material. When thin thickness of Al was thermally evaporated on BCP, gap states were observed by ultraviolet photoemission spectroscopy. The closest gap state yielded below 0.3 eV from Fermi level. By x-ray photoemission spectroscopy, interaction of Al with nitrogen of BCP was observed. To understand the origin of gap states, DFT calculation was carried out and gap states was verified with successive calculation of interaction of Al and nitrogen of BCP. Furthermore, emergency of another state above Fermi level was observed. Remarkable reduction of electron injection barrier between Al and BCP, therefore, is possible.

• 한국세라믹학회지
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• 제36권1호
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• pp.50-54
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• 1999

양이온 결손 La0.970Mn0.970O3의 x-ray photoemission spectroscopy를 온도를 함수로 측정하였다. 온도의 변화에 따라서 Mn 2p와 3d core level의 화학적 변동 및 이동이 관측되었다. 즉 Mn 2p 3/2와 1/2 및 La 3d core 스펙트럼은 온도의 증가와 함께 저 결합 에너지 측으로 이동이 관측되었다. 이러한 XPS 관측 결과는 Mn3+의 localization의 강도 변화에 의한 것으로 사료되며, Mn3+에 의한 Jahn-Teller효과 이외에도 conventional random potential 효과 역시 La0.790Mn0.970O3의 전도 carrier의 localization에 기여하는 것으로 사료된다.

• Applied Microscopy
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• 제45권3호
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• pp.115-118
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• 2015

In this review paper, I'd like to introduce the basics of angle-resolved photoemission spectroscopy (ARPES) and some of my results taken at the Pohang Accelerator Laboratory (PAL), the only synchrotron radiation in South Korea. The results show that ARPES is very useful, in particular, for studying two-dimensional materials. It looks like a microscope in momentum space similar to transmission electron microscope imaging atoms in real space.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.82-82
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• 2012

Angle-resolved photoemission spectroscopy (ARPES) is a powerful tool to investigate the electronic structure of a single-crystalline solid. After the development of a two-dimensional electron detector, it became a basic experimental method in solid state physics comparable to other powerful tools such as x-ray and neutron scatterings. In this tutorial, I talk briefly on the basic principle of ARPES and its recent and future direction of development.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 한국자기학회지
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• 제22권6호
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• pp.228-233
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• 2012

한 고체의 자성은 원자가 전자의 양자역학적 상태에 의해 결정되는데, 스핀편극 각도분해 광전자 분광학(SP-ARPES)은 고체안의 전자상태를 조사할 수 있는 가장 강력한 방법으로 어떤 물질의 자성을 이해하는 데에 많은 도움을 준다. 본고에서는 SP-ARPES 방법에 대한 간락한 소개와 이를 통해 얻을 수 있는 물리적 정보에 대해 기술한다.

• Applied Science and Convergence Technology
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• 제24권5호
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• pp.151-155
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• 2015

The interfacial electronic structure between zinc phthalocyanine (ZnPc) and aluminumdoped zinc oxide (AZO) substrates has been evaluated by ultraviolet photoemission spectroscopy and angle-dependent x-ray absorption spectroscopy to understanding the molecular orientation of a ZnPc layer on the performance of small molecule organic photovoltaics (OPVs). We find that the ZnPc tilt angle improves the ${\pi}-{\pi}$ interaction on the AZO substrate, thus leading to an improved short-circuit current in OPVs based on phthalocyanine. Furthermore, the molecular orientation-dependent energy level alignment has been analyzed in detail using ultraviolet photoemission spectroscopy. We also obtained complete energy level diagrams of ZnPc/AZO and ZnPc/indium thin oxide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.181-181
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• 2011

The adsorption structure and the electronic property of azidotrimethyltin (ATMT) on monolayer graphene was investigated using scanning tunneling microscopy and core-level photoemission spectroscopy. We also confirmed the n-type doping effect by scanning tunneling spectroscopy and work function measurements. We will systematically demonstrate the variation of characteristic of graphene induced by the chemical functionalized molecule as we confirmed the results using scanning tunneling microscopy in conjunction with core-level photoemission spectroscopy.

• 한국재료학회지
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• 제27권1호
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• 진공이야기
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• 제2권2호
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• pp.4-11
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• 2015

본 글에서는 광전자 분광 및 역광전자 분광을 이용한 유기분자 시스템의 전자구조 연구에 대하여 기술하였다. 다양한 유기물간의 계면 연구가 급속도로 늘어나고 있으며, 폴리머, 거대 분자 등 기존의 in situ 분석 방법으로 실험이 어려운 물질까지도 연구의 필요성이 늘어나고 있다. Electrospray 증착 방법이 이러한 새로운 물질들의 계면 전자구조 연구를 가능하게 할 수 있음을 살펴보았으며, 다양한 새로운 분석 기법들의 출현을 기대해 본다. 몇 가지 예에서 살펴본 바와 같이 전자구조는 소자 구동 특성을 직접적으로 지배하는 핵심적인 물리량이며, 전자구조의 이해를 통해 전자소자의 구동 원리, 성능 최적화 및 소자 특성 열화의 원인을 파악할 수 있다. 현재, 유기물 소자 관련 기술의 성숙도는 전자구조 분석과 같은 기초 연구 결과 없이는 더 이상 발전할 수 없는 정도에 이르러, 관련 분석 기술에 대한 수요가 더욱 늘어날 것으로 전망된다.