• Title/Summary/Keyword: photoemission spectroscopy

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Stereoselective attachment of S-Proline on Ge(100)

  • Youn, Young-Sang;Kim, Ki-Jeong;Kim, Bong-Soo;Lee, Hang-Il;Kim, Se-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.367-367
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    • 2010
  • The adsorption configurations of S-proline on Ge(100) were studied using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution core-level photoemission spectroscopy (HRCLPES). We identified three adsorption structures of S-proline on Ge(100) through analysis of the STM images, DFT calculations, and HRCLPES results: (i) an 'intrarow O - H dissociated and N dative bonded structure', (ii) an 'O - H dissociation structure', and (iii) an 'N dative bonded structure'. Moreover, because adsorption through the N atom of S-proline produces a new chiral center due to symmetry reduction by N dative bonding, the adsorption configurations have either (R,S) or (S,S) chirality, yielding an (R,S)-'intrarow O - H dissociated and N dative bonded structure' and an (R,S)-'N dative bonded structure', with a preference for reaction at the Re face. This work presents a novel method for generating stereoselective attachment using S-proline molecules adsorbed onto a Ge(100) surface.

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Unexpected Chemical and Thermal Stability of Surface Oxynitride of Anatase TiO2 Nanocrystals Prepared in the Afterglow of N2 Plasma

  • Jeon, Byungwook;Kim, Ansoon;Kim, Yu Kwon
    • Applied Science and Convergence Technology
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    • v.26 no.4
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    • pp.62-65
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    • 2017
  • Passivation of surface defects by the formation of chemically inert structure at the surface of $TiO_2$ nanocrystals can be potentially useful in enhancing their photocatalytic activity. In this regard, we have studied the surface chemical states of $TiO_2$ surfaces prepared by a treatment in the afterglow of $N_2$ microwave plasma using X-ray photoemission spectroscopy (XPS). We find that nitrogen is incorporated into the surface after the treatment up to a few atomic percent. Interestingly, the surface oxynitride layer is found to be chemically stable when it's in contact with water at room temperature (RT). The surface nitrogen species were also found to be thermally stable upon annealing up to $150^{\circ}C$ in the atmospheric pressure. Thus, we conclude that the treatment of oxide materials such as $TiO_2$ in the afterglow of $N_2$ plasma can be effective way to passivate the surface with nitrogen species.

Regulation of precursor solution concentration for In-Zn oxide thin film transistors

  • Chen, Yanping;He, Zhongyuan;Li, Yaogang;Zhang, Qinghong;Hou, Chengyi;Wang, Hongzhi
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1300-1305
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    • 2018
  • The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

Research Trend of Topological Insulator Materials and Devices (위상절연체 소재 및 소자 기술 개발 동향)

  • W.J. Lee;T.H. Hwang;D.H. Cho;Y.D. Chung
    • Electronics and Telecommunications Trends
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    • v.38 no.1
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    • pp.17-25
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    • 2023
  • Topological insulators (TIs) emerge as one of the most fascinating and amazing material in physics and electronics. TIs intrinsically possess both gapless conducting surface and insulating internal properties, instead of being only one property such as conducting, semiconducting, and insulating. The conducting surface state of TIs is the consequence of band inversion induced by strong spin-orbit coupling. Combined with broken inversion symmetry, the surface electronic band structure consists of spin helical Dirac cone, which allows spin of carriers governed by the direction of its momentum, and prohibits backscattering of the carriers. It is called by topological surface states (TSS). In this paper, we investigated the TIs materials and their unique properties and denoted the fabrication method of TIs such as deposition and exfoliation techniques. Since it is hard to observe the TSS, we introduced several specialized analysis tools such as angle-resolved photoemission spectroscopy, spin-momentum locking, and weak antilocalization. Finally, we reviewed the various fields to utilize the unique properties of TIs and summarized research trends of their applications.

Valence Band Photoemission Study of Co/Pd Multilayer (광전자분광법을 이용한 Co/Pd 다층박막의 전자구조연구)

  • Kang, J.-S.;Kim, S.K.;Jeong, J.I.;Hong, J.H.;Lee, Y.P.;Shin, H.J.;Olson, C.G.
    • Journal of the Korean Magnetics Society
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    • v.3 no.1
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    • pp.48-55
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    • 1993
  • We report the photoemission (PES) studies for the Co/Pd multilayter. The Co 3d PES spectrum of Co/Pd exhibits two interesting features, one near the Fermi energy, $E_{F}$, and another at ~2.5 eV below $E_{F}$. The Co 3d peak near $E_{F}$ of Co/Pd is much narrower than that of the bulk Co, consistent with the enhanced Co magnetic moment in Co/Pd compared to that in the bulk Co. The Co 3d feature at ~-2.5 eV resembles the Pd valence band structures, which suggests a substantial hybridization between the Co and Pd sublayers. The Co 3d PES spectrum of Co/Pd is compared with the existing band structures, obtained using the local spin density functional calculations. A reasonable agreement is found concerning the bandwidth of the occupied part of the Co 3d band, whereas a narrow Co 3d peak near $E_{F}$ seems not to be described by the band structure calculations.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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Chemical Bonding and Surface Electronic Structures of Pt3Co (111), Pt3Ni (111) Single Crystals

  • Kim, Yong-Su;Jeon, Sang-Ho;Bostwick, Aaron;Rotenberg, Eli;Ross, Philip N.;Stamenkovic, Vojislav R.;Markovic, Nenad M.;Noh, Tae-Won;Han, Seung-Wu;Mun, Bong-Jin Simon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.139-139
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    • 2012
  • With angle resolved photoemission spectroscopy (ARPES), the surface electronic band structures of Pt3Co (111) and Pt3Ni (111) single crystals are investigated, which allow to study the bonding interaction between chemically absorbed atomic oxygen and its surfaces. The d-band electrons of subsurface TM are separated from the direct chemical bonding with atomic oxygen. That is, the TM does not contribute to direct chemical bonding with oxygen. From the density functional theory (DFT) calculations, it is identified that the main origin of improved oxygen absorption property, i.e. softening of Pt-O bonding, is due to the suppression of Pt surface-states which is generated from change of interlayer potential, i.e. charge polarization, between Pt-top and TM-subsurface. Our results point out the critical roles of subsurface TM in modifying surface electronic structures, which in turn can be utilized to tune surface chemical properties.

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Study of the Carrier Injection Barrier by Tuning Graphene Electrode Work Function for Organic Light Emitting Diodes OLED (일함수 변화를 통한 그래핀 전극의 배리어 튜닝하기)

  • Kim, Ji-Hun;Maeng, Min-Jae;Hong, Jong-Am;Hwang, Ju-Hyeon;Choe, Hong-Gyu;Mun, Je-Hyeon;Lee, Jeong-Ik;Jeong, Dae-Yul;Choe, Seong-Yul;Park, Yong-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.111.2-111.2
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    • 2015
  • Typical electrodes (metal or indium tin oxide (ITO)), which were used in conventional organic light emitting devices (OLEDs) structure, have transparency and conductivity, but, it is not suitable as the electrode of the flexible OLEDs (f-OLEDs) due to its brittle property. Although Graphene is the most well-known alternative material for conventional electrode because of present electrode properties as well as flexibility, its carrier injection barrier is comparatively high to use as electrode. In this work, we performed plasma treatment on the graphene surface and alkali metal doping in the organic materials to study for its possibility as anode and cathode, respectively. By using Ultraviolet Photoemission Spectroscopy (UPS), we investigated the interfaces of modified graphene. The plasma treatment is generated by various gas types such as O2 and Ar, to increase the work function of the graphene film. Also, for co-deposition of organic film to do alkali metal doping, we used three different organic materials which are BMPYPB (1,3-Bis(3,5-di-pyrid-3-yl-phenyl)benzene), TMPYPB (1,3,5-Tri[(3-pyridyl)-phen-3-yl]benzene), and 3TPYMB (Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane)). They are well known for ETL materials in OLEDs. From these results, we found that graphene work function can be tuned to overcome the weakness of graphene induced carrier injection barrier, when the interface was treated with plasma (alkali metal) through the value of hole (electron) injection barrier is reduced about 1 eV.

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Comparison on the Physical & Chemical Characteristics in Surface of Polished Wafer and Epi-Layer Wafer (Polished Wafer와 Epi-Layer Wafer의 표면 처리에 따른 표면 화학적/물리적 특성)

  • Kim, Jin-Seo;Seo, Hyungtak
    • Korean Journal of Materials Research
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    • v.24 no.12
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    • pp.682-688
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    • 2014
  • Physical and chemical changes in a polished wafer and in $2.5{\mu}m$ & $4{\mu}m$ epitaxially grown Si layer wafers (Epilayer wafer) after surface treatment were investigated. We characterized the influence of surface treatment on wafer properties such as surface roughness and the chemical composition and bonds. After each surface treatment, the physical change of the wafer surface was evaluated by atomic force microscopy to confirm the surface morphology and roughness. In addition, chemical changes in the wafer surface were studied by X-ray photoemission spectroscopy measurement. Changes in the chemical composition were confirmed before and after the surface treatment. By combined analysis of the physical and chemical changes, we found that diluted hydrofluoric acid treatment is more effective than buffered oxide etching for $SiO_2$ removal in both polished and Epi-Layer wafers; however, the etch rate and the surface roughness in the given treatment are different among the polished $2.5{\mu}m$ and $4{\mu}m$ Epi-layer wafers in spite of the identical bulk structural properties of these wafers. This study therefore suggests that independent surface treatment optimization is required for each wafer type, $2.5{\mu}m$ and $4{\mu}m$, due to the meaningful differences in the initial surface chemical and physical properties.

Surface Characterization of Anodized and Hydrothermal Treated Niobium Metal (양극산화와 열수처리한 니오비움 금속의 표면특성)

  • Won Dae-Hee;Kim Young-Soon;Yoon Dong-Joo;Lee Min-Ho;Bae Tae-Sung
    • Korean Journal of Materials Research
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    • v.15 no.2
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    • pp.134-138
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    • 2005
  • This study was performed to investigate the surface properties of electrochemically oxidized pure niobium by anodic oxide and hydrothermal treatment technique. Niobium specimens of $10mm\times10mm\times1.0mm$ in dimension were polished sequentially from $\#600,\;\#800,\;\#1000$ emery paper. The surface of pure niobium sperimens was anodized in an electrolytic solution that was dissolved calcium and phosphate in water. The electrolytic voltage was set in the range of 250 V and the current density was $10mA/cm^2$. The specimen was hydrothermal treated in high-pressure steam at $300^{\circ}C$ for 2 hours using an autoclave. And all specimens were immersed in the in the Hanks' solution nth pH 7.4 at $37^{\circ}C$ for 30 days. The surface of specimen was characterized by surface roughness, scanning electron microscope(SEM), energy dispersion X-ray analysis(EDX), X-ray photoemission spectroscopy(XPS) test. The value of surface roughness was the highest in the anodized sample and $0.41{\pm}0.04\;{\mu}m$. The results of the SEM observation show that oxide layers of the multi porosity in the anodized sample were piled up on another, and hydroxyapatite crystal was precipitate from the surface of the hydrothermal treated sample. In the XPS analysis, O, Nb, C peak and small amounts of N peak were found in the polished specimens while Ca and P peak in addition to O, Nb, C and peak were observed in the hydrothermal treated sample.