• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3294-3298
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• 2014

We theoretically investigated the coherent control of Autler-Townes splitting in photoelectron spectroscopy of K2 molecule within an ultrafast laser pulse by solving the time-dependent Schrodinger equation using a quantum wave packet method. It was theoretically shown that we can manipulate the splitting of photoelectron spectroscopy by altering the laser intensity. Furthermore, it was found that the percentages of each peak in photoelectron spectroscopy can be controlled by changing the envelope of the laser pulse.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2565-2566
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• 2013

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.135-137
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• 2006

To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.

• Journal of Information Display
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• v.6 no.1
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• pp.28-32
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• 2005

The electronic structures of Al/RbF/tris-(8-hydroxyquinoline)aluminium ($Alq_3$) and $Al/CaF_2/Alq_3$interfaces were investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). For both systems, the UPS showed a significant valence band shift following the deposition of the thin fluoride layers on $Alq_3$. However, the formation of gap state in valence region and the extra peak N 1s core level spectra showed different trends, suggesting that the alkali fluoride and alkali-earth fluoride interlayer have different reaction mechanisms at the interface between Al cathode and $Alq_3$. In addition, the deposition of Al has considerably less effect on the valence band shift compared to the deposition of both RbF and $CaF_2$. These results suggest that the charge transfer across the interface and the resulting gap state formation may have lesser effect on the enhancement of organic light-emitting device performance than the observed valence band shift, which is thought to lower the electron injection barrier.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.281-283
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• 2005

Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1441-1444
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• 2013

Hetero-dimer anions of naphthalene (Np), anthracene (An), phenanthrene (Ph) and pyrene (Py) were investigated using the time-of-flight mass spectrometer (TOF-MS), anion photoelectron spectroscopy (PES) and theoretical calculation. There are two possible geometries with their electron affinity (EA) difference: parallel displaced (PD) and T-shaped. Dispersion force plays a key role in PD structure with the formation of a new anionic core while ${\pi}$-hydrogen interaction plays a key role in T-shaped structure with the monomer anionic core. The optimized structures and charge distributions can simply be explained by the relative difference of EA.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.1
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.728-734
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• 1996

To obtain the relation in the electrochemical reduction of $CO_2$ in aqueous $KHCO_3$ colution between an activity for the product and the nature of Cu electrode, the electrode surface was characterized by using two methods: X-ray photoelectron spectroscopy (XPS) and photoelectron emission (PE) measurement. Electrolyses were performed with Cu electrodes pretreated in several ways. The distribution of the products changed drastically with electrolysis time and the pretreatment method. The features in XPS spectra were closely connected with the product distribution. The oxide film at the electrode surface was gradually reduced to bare Cu metal with electrolysis time, resulting in a variation of the product distribution. PE was measured by verying the wavelength of incident light at several temperatures. The dependence of PE on the measurement temperature changed greatly before and after electrolysis.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.189-194
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• 2002

Two-photon resonant third photon ionization of atomic bromine $(4p^5\;^2P_{3/2}\;and\;^2P_{1/2})$ has been studied using a photoelectron imaging spectroscopy in the wavelength region 250 - 278 nm. The technique has yielded simultaneously both relative branching ratios to the three levels of $Br^+(^3P_2,\;^3P_{0.1}\;and^1D_2)$ with $4p^4$ configuration and the angular distributions of outgoing photoelectrons. The product branching ratios reveal a strong propensity to populate particular levels in many cases. Several pathways have been documented for selective formation of $Br^+(^3P_2)$ and $Br^+(^3P_{0.1})$ ions. In general, the final ion level distributions are dominated by the preservation of the ion core configuration of a resonant excited state. Some deviations from this simple picture are discussed in terms of the configuration interaction of resonant states and the autoionization in the continuum. The photoelectron angular distributions are qualitatively similar for all transitions, with a positive $A_2$ anisotropy coefficient of 1.0-2.0 and negligible $A_4$ in most cases, which suggests that the angular distribution is mainly determined by the single-photon ionization process of a resonant excited state induced from the third photon absorption.