• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.144-150
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• 1991

The stainless steel 304 oxidized at $70^{\circ}C$ in 2.5M CrO3/5.0M H2SO4 solution and at $200^{\circ}C$ , $300^{\circ}C$, and $400^{\circ}C$ in the air are analyzed with X-ray Photoelectron Spectroscopy (XPS) to obtain depth composition profile of the surface region. It is confirmed that the surface region has a quite different composition from that of the bulk. This is due to a difference in the outward diffusion rates of the oxidized species in the surface region. The order of diffusion rates is Fe > Cr > Ni in the experimental temperature range. In spite of the inferior rate of diffusion, Cr is enriched in the surface when it is oxidized in the CrO3/H2SO4 solution. This is due to preferential dissolution of oxidized Fe.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1039-1040
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• 2006

Vacuum degassing is essential in the preparation of RS P/M aluminum alloys to remove adsorbates and for the decomposition of hydrated-$Al_{2}O_3$ on the powder surface. Changes in the surface characteristics during vacuum degassing were investigated by X-ray photoelectron spectroscopy and temperature-programmed desorption measurement. Hydrated-$Al_{2}O_3$ decomposition to crystalline-$Al_{2}O_3$ and hydrogen desorption on the surface of argon gas-atomized aluminum powder occurred at 623 K and 725 K, respectively. This temperature difference suggests that the reaction converting hydrated-$Al_{2}O_3$ to crystalline-$Al_{2}O_3$ during vacuum degassing should be divided into the two reactions $"2Al+Al_{2}O_3{\cdot}3H_2O\;2Al_{2}O_3+6H_{surf}"and"6H_{surf}3H_2"$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.34-38
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• 1999

In this study, molybdenum thin films were etched with the various Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$, photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS).

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3693-3696
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• 2010

We experimentally measure the kinetic energy and angular distributions of photoelectrons of $N_2$ as a function of 410 nm femtosecond laser intensity by using velocity map imaging technique. The strong-field multiphoton ionization of molecules shares many of the characteristics with those of atoms. Electron kinetic energies are nearly independent of laser intensities. The independence suggests that the electron peaks in the photoelectron spectrum actually result from a two-step process, indicative of the occurrence of real population in the intermediate states. The relative amplitudes of electron peaks indicate that in the two-step process, nonresonant population transfer dominates for low intensities, while resonant population transfer dominates for higher intensities.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.149.1-149.1
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• 2013

Noble metal silicides are widely used in silicon based microelectronic and optoelectronic devices. Among them, as compared to other silicides, structural and electronic properties of platinum silicide (PtSi) are found to be less sensitive to change in its dimensions. PtSi is known to overcome the junction spiking problems of Al-Si contacts. Present study is regarding the spatial evolution of platinum silicide in Pt/SiOx/Si. Scanning photoelectron emission microscopy (SPEM) was used for this purpose. SPEM images were obtained for pristine samples and after an annealing at $500^{\circ}C$ for 1 hr. Core-level spectra were recorded at different points in SPEM images contrasted by the intensity of Pt 4f7/2. Both Pt 4f and Si 2p spectra reveal the formation of PtSi after annealing. However, in contrast to earlier reports, PtSi formation is found to be non-uniform confirmed by the SPEM images and from the core level spectra taken at different intensity points.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.5-6
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• 2007

반투명 전도성 음극 (semi-transparent conducting cathode)인 Ba (x nm)/Au (20 nm)/ITO (100 nm)을 이용하여 전면발광 유기전계 발광 소자 (top-emitting organic light-emitting didodes, TEOLEDs)를 제작했다. Ba과 bis(8-quinolinolato)aluminum (III) ($Alq_3$) 계면의 전자구조는 엑스선 광전자 분광법 (X-ray photoelectron spectroscopy, XPS), 자외선 광전자 분광법 (ultraviolet photoelectron spectroscopy, UPS) 및 가까운 끝머리 엑스선 흡수 미세구조 (near-edge x-ray absorption fine structure, NEXAFS) 스펙트럼의 광 방출 특성을 통하여 조사되었다. $Alq_3$/Ba 계면 특성에 있어서 XPS와 NEXAFS 특성에 의하면, $Alq_3$ (10.0 nm) 위에 Ba이 연속적으로 증착됨에 따라 Ba으로부터 $Alq_3$로의 전자전달 (electron charge transfer) 특성은 꾸준희 증가된다. 그러나 Ba의 두께가 1.0 nm 이상 초과되면 Ba의 전자전달에 기인한 반응성때문에 $Alq_3$의 분자구조가 해리된다. 한편, 제작된 TEOLEDE의 전류-전압-휘도 곡선의 경우에서도 바륨의 증착 두께가 1.0 nm일 때 가장 우수한 구동특성을 나타냈다.

• Bulletin of the Korean Chemical Society
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• v.11 no.2
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• pp.118-123
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• 1990

X-ray photoelectron spectra have been obtained and comparisons have been made for 1-2-3 and 2-1-1 phases of YBaCuO compounds. The photoelectron binding energies of all the constituent elements are consistently larger for the 2-1-1 phase than for the 1-2-3 phase. The peak intensities reflect different stoichiometries of the two phases. For the superconducting 1-2-3 phase, its degradation in air and interaction with water and carbon dioxide were examined by taking core level spectra of all the elements. It appears that yttrium is the most affected by exposure to air, since it undergoes a rapid change to carbonate when water and subsequently carbon dioxide are introduced.

• Journal of the Korean Chemical Society
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• v.66 no.5
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• pp.341-348
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• 2022

In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon (100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implemented to study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eV becomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled with energy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m. Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gap gradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

• Ceramist
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• v.10 no.5
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• pp.74-85
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• 2007

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.16-25
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• 2002