• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.305-308
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• 2007

The field of dye-sensitized solar cell (DSC) is being researched actively at present. Because DSC has several advantages to pass the limits of Si solar cells such as a low manufacturing expense, a simple manufacturing process and its transparency. A lot of researches are underway about materials and processes in the field of dye-sensitized solar cell but its structure has been fixed up as the sandwich structure that both edges are used as positive and negative terminals. But the structure as of present is a factor of decreasing efficiency because the more electrons are recombined the further distance from terminal, considering about the characteristic of dye-sensitized solar cell that electrons generated inside cell are moved by diffusion. In this study, we made experiment on expanding the terminal to shorten internal moving distance of electron and compared the results according to the variation of active area to find out the effect of this trial. As a result, we achieved about 15.5% improvement of maximum power and 0.5% improvement of efficiency from terminal-expanded dye-sensitized solar cell of $2cm^{2}$ active area and concluded that the increasing rate of efficiency is raised as the active area becomes wider.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.199-201
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• 2006

A lot of researches and experiments have been performed to make more efficient dye-sensitized solar cell. Among them, insertion of a grid electrode in DSC is one method to increase overall performance as being shortened distance of electrons' movement by diffusion. In this paper, we measured overall characteristics which is included voltage-current characteristic curve, efficiency, fill factor by comparison between DSC without and with grid electrode. As a result, we got maximum 1.8 times increase of efficiency and approximately 1.7 times rise of fill factor. And we experimented 8, 10, 12, 14mm of grid gap and compared their results to optimize grid gap which is able to incite the most effective movement of electrons. Consequently, we got the result that electrons' movement is the most effect ive when grid gap is approximately 12mm.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1268-1270
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• 1995

A method using photoelectric effect of a single-mode optical fiber, with a 632.8nm He-Ne laser, has been developed for the simultaneous measurment of current and voltage. The Magnetic stress for the current and the piezoelectric effect for voltage are utilized. It is found that the detector output voltage is proportional to the square of the applied current and the frequency of the output is twice of that of the applied current.

• 전기의세계
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• v.25 no.5
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.31-35
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• 2004

We propose driving method of Ultraviolet sensor for fire alarms using pulse width modulation that used to fire detector with sensor of private-use detectable light energy as ultraviolet in energy of electromagnetic-wave type radiate from flame, when combustible burn with contain carbon,. Ultraviolet sensor is UV Tron using gas multiplication effect to current discharge and photoelectric effect of metal. To have high sensibility and to gain proper output voltage, it has high responsive performance. This research designed driving circuit with UV sensors and proposed method of false alarm reduced to resemble fire. the result propers the prevention and extinction of fire technique degree, certificated operation of detector.

• Current Optics and Photonics
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• v.7 no.5
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• pp.562-568
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• 2023

We designed a combined nanostructure of inverted pyramidal pits and nanoparticles, which can obtain much stronger field enhancement than traditional periodic pits or nanoparticles. The field enhancement |E|/|E₀| is greater than 10 in a large area at 750-820 nm in incident wavelength. |E_max|/|E₀| is greater than 60. Moreover, the hot spot is obtained outside the pits instead of localized inside them, which is beneficial for experiments such as surface-enhanced Raman scattering. The relations between resonant wavelength and structural parameters are investigated. The resonant wavelength shows a linear dependence on the structure's period, which provides a direct way to tune the resonant wavelength. The excitation of a propagating surface plasmon on the periodic structure's surface, a localized surface plasmon of nanoparticles, and a standing-wave effect contribute to the enhancement.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.164-174
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• 2018

The purpose of this work designed hybrid-structured and plasma effect photocatalyst of $Ag/In_2O_3/TiO_2/HNTs$ via sol-gel and photo-reduction methods. The structures, morphologies, optical and photoelectric performances of as-prepared photocatalysts were characterized via XRD, TEM, XPS, BET, UV-vis DRS, PL and photocurrents. The photocatalytic activity was evaluated by degradation of TC. The results showed that the hybrid-structure and plasma effect can effectively cause the multi-transfer of electrons and increase the separation rate of electron and hole pairs which obtained high photocatalytic activity. The photocatalytic degradation processes reveal that $^{\bullet}O_2{^-}$ and $h^+$ are major active species.

• Korean Journal of Digital Imaging in Medicine
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• v.12 no.1
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• pp.19-25
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• 2010

This study is mainly for the reduction of exposure dose by using a heavy elements filter(Gd) in the digital radiology. They contained heavy elements filter of Gd and X-ray beam hardening filters such as Al and Cu. According to the results of experimental evaluation, X-ray property was not changed with variety of kVp in the case of the Gd filter. The surface dose and absorption dose were increased in order of Cu and Al. The contrast of image showed the higher value in order of Cu, Al and Gd. While the use of Gd has increased the numerical value of the CR image, and grayscale has decreased noise value of the DR image.