• Title/Summary/Keyword: photodetector

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Study of multi-stacked InAs quantum dot infrared photodetector grown by metal organic chemical vapor deposition

  • Kim, Jeong-Seop;Ha, Seung-Gyu;Yang, Chang-Jae;Lee, Jae-Yeol;Park, Se-Hun;Choe, Won-Jun;Yun, Ui-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.129-129
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    • 2010
  • 적외선 검출소자(Infrared Photodetector)는 근적외선에서 원적외선 영역에 이르는 광범위한 파장 범위의 적외선을 이용하는 기기로서 대상물이 방사하는 적외선 영역의 에너지를 흡수하여 이를 영상화할 수 있는 장비이다. 적외선 관련 기술은 2차 세계대전 기간에 태동하였으며, 현재에는 원거리 감지기술 등과 접목되면서 그 활용 분야가 다양해지고 있다. 특히 능동형 정밀 타격무기를 비롯한 감시 정찰 장비 및 지능형 전투 장비 시스템 등에 대한 요구를 바탕으로 보다 정밀하고 신속한 표적 감지 및 정보처리 기술에 관한 연구가 선진국을 통해서 활발히 진행되고 있다. 기존의 Bolometer 형식의 열 감지 소자는 반응 속도가 느리고 측정 감도가 낮은 단점이 있으며, MCT(HgCdTe)를 이용한 적외선 검출기의 경우 높은 기계적 결함과 77K 저온에서 동작해야하기 때문에 발생하는 추가 비용 등이 문제점으로 지적되고 있다[1]. 이에 반해 화합물 반도체 자기조립 양자점(self-assembled quantum dot)을 이용한 적외선 수광소자는 양자점이 가지는 불연속적인 내부 에너지 준위로 인하여, 높은 내부 양자 효율과 온도 안정성을 기대할 수 있으며, 고성능, 고속처리, 저소비전력 및 저소음의 실현이 가능하다. 본 연구에서는 적층 InAs/InGaAs dot-in-a-well 구조를 유기금속화학기상증착법을 이용하여 성장하고 이를 소자에 응용하였다. 균일한 적층 양자점의 성장을 위해서 원자현미경(atomic force microscopy)을 이용하여, 각 층의 양자점의 크기와 밀도를 관찰하였고, photoluminescence (PL)를 이용하여 발광특성을 연구하였다. 각 층간의 GaAs space layer의 두께와 온도 조절 과정을 조절함으로써 균일한 적층 양자점 구조를 얻을 수 있었다. 이를 이용하여 양자점의 전도대 내부의 에너지 준위간 천이(intersubband transition)를 이용하는 n-type GaAs/intrinsic InAs 양자점/n-type GaAs 구조의 양자점 적외선수광소자 구조를 성장하였다. 이 과정에서 상부 n-type GaAs의 성장 온도가 600도 이상이 되는 경우 발광효율이 급격히 감소하고, 암전류가 크게 증가하는 것을 관찰하였다. 이는 InAs 양자점과 주변 GaAs 간의 열에 의한 상호 확산에 의하여 양자점의 전자 구속 효과를 저해하는 것으로 설명된다.

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A Study on the Growth Temperature of Atomic Layer Deposition for Photocurrent of ZnO-Based Transparent Flexible Ultraviolet Photodetector (원자층 증착법의 성장온도에 따른 산화아연 기반 투명 유연 자외선 검출기의 광전류에 대한 연구)

  • Choi, Jongyun;Lee, Gun-Woo;Na, Young-Chae;Kim, Jeong-Hyeon;Lee, Jae-Eun;Choi, Ji-Hyeok;Lee, Sung-Nam
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.80-85
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    • 2022
  • ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

Photophysical and Photochemical Property of ATX-S10

  • Ito, Toshiaki;Okazaki, Shigetoshi;Kageyama, Kazumi;Hirohata, Toru;Kohno, Eiji;Hirano, Toru
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.527-529
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    • 2002
  • Photodynamic therapy (PDT) is a medical treatment using laser and photosensitizing drug taken up to destroy cancer cells. Singlet oxygen ($^1$0$_2$) generation is strongly related to this treatment. We have built a direct detection system monitoring feeble luminescence, in the near IR region, from $^1$0$_2$, We have comparatively studied the photophysical and photochemical properties in solution of a newly developed drug ATX-S10 and Photofrin already investigated clinically. We demonstrdted that ATX-S10 was capable of efficiently yielding $^1$0$_2$, which may lead to highly efficient PDT treatment. Successive laser excitation photobleached ATX -S10 readily in a dose-dependent manner. This result shows that ATX -S10 is useful in setting up suitable medical treatment conditions to minimize side effects.

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The Parameter Identification for Localization Scheme of the Optics-Based Micro Sensor Node (광신호 기반의 마이크로 센서 노드 위치 인식 시스템을 위한 파라미터 식별)

  • Jeon, Ji-Hun;Lee, Min-Su;Park, Chan-Gook
    • Journal of Institute of Control, Robotics and Systems
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    • v.19 no.2
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    • pp.81-86
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    • 2013
  • In this paper, the parameter identification for localization scheme for the optics-based micro sensor node is conducted. We analyzed short measurement range problem which can be occurred in optical based micro sensor node localization method using a time of flight. And we set up the theory for distance and maximum reflected laser power to overcome the problem by identifying hardware parameters like laser power, effective area of MEMS CCR, sensitivity of photodetector, and so on. Experimental results of measurement of maximum reflected laser power were compared with results of the theory. By using the theory, we can identify hardware parameters of localization scheme to measure particular position of the optics-based micro sensor node.

Optical Ozone Monitor Using UV Source

  • Chung, Wan-Young
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.49-52
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    • 2003
  • Two types of ozone monitors using UV absorption method were tried in consideration of cost of the monitor and precision in measuring. The high concentration ozone monitor for high concentration real time ozone monitoring from ozone generator was composed of a low pressure mercury lamp as UV source, a photo multiplier tube as UV detector and signal processing unit for the most part. This structure could be very useful for low price high concentration ozone monitor due to simple system structure and fairly good monitoring characteristics. The developed system showed good linear output characteristics to ozone in the measuring concentration range of 0.05 and 2 wt.%. For accuracy ambient ozone monitoring in ambient in ppm level, the system composed of a high power pulsed xenon lamp as UV source, an optical spectrometer with a high sensitivity linear CCD array as UV detector and signal processing unit in brief speaking was proposed our study for the first time in the world. The developed system showed good linearity and sensitivity in relative low measuring range between 10ppm and 10,000ppm, and showed some feasibility of high resolution ozone monitor using CCD array as photodetector.

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Two dimensional tin sulfide for photoelectric device

  • Patel, Malkeshkumar;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.389.1-389.1
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    • 2016
  • The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

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A Study on Displacement Measurement by A Laser Interferometry using Common-path Fiber-optical Devices

  • Lee, Seok-Soon;Lee, Dong-Wook;Park, Min-Hyeok;Choi, Jin-Gyu;Nam, Kwang-Sik;Zhao, Shang
    • International Journal of Aerospace System Engineering
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    • v.1 no.1
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    • pp.29-33
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    • 2014
  • A displacement measurement system that uses fiber-optical common-path interferometry has been developed. The system includes fiber-optic devices and a collimator attached to a linear translation stage. The interferometry effect was detected with a photodetector whose signal was measured on an oscilloscope. Experiments showed that vibration of the stage disturbed the signal by causing nanoscale interference. Under stable conditions, the measured distance was the almost the same as the value calculated from the linear translation stage parameters.

In-process Detection of Surface Roughness and Waviness Using Laser Beam (레이저빔을 이용한 표면거칠기 및 파상도의 in-process 검출)

  • 김희남
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1997.10a
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    • pp.254-259
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    • 1997
  • The measurement of surface roughness and waviness by means of noncontact method is an important area to be developed for GAC(Geometrical Adaptive Control) system. This paper deal with the design of noncontact in-process measurement system which measures the surface roughness and waviness during cylindrical grinding. This measuring system is simple and the apparatus proposed is composed of a laser unit, photodetector and optical system. During operation, the surface of a workpiece is continuously scanned by a laser beam. This method makes it possible to detect the surface roughness and waviness along the feed direction by control the spot diameter of laser beam. The experimental results show that the presence of chattering, loading and glazing can be detected sensitively along the feed directions.

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Reducing the Effects of Noise Light in a Visible Light Communication System Using Two Color LEDs (가시광통신 시스템에서 2색 LED를 이용한 잡음광의 영향 감소)

  • Lee, Seong-Ho
    • Journal of Sensor Science and Technology
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    • v.21 no.6
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    • pp.429-433
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    • 2012
  • In this paper, we reduced the optical noise interference in a visible light communication system using two color LEDs. In the transmitter, the original and the inverted signals of the transmitted data modulated a red LED and a blue LED, respectively. In the receiver, a differential detector which is composed of two photodetectors and an optical red filter detected the mixed signal radiated from the two LEDs. In an environment that the optical noise from a fluorescent lamp exists, the signal-to-noise ratio in this system was improved by about 20dB compared to that in the conventional system which uses a single LED and a single photodetector.

The World's Thinnest Graphene Light Source (세상에서 가장 얇은 그래핀 발광 소자)

  • Kim, Young Duck
    • Vacuum Magazine
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    • v.4 no.3
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    • pp.16-20
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    • 2017
  • Graphene has emerged as a promising material for optoelectronic applications including as ultrafast and broadband photodetector, optical modulator, and nonlinear photonic devices. Graphene based devices have shown the feasibility of ultrafast signal processing for required for photonic integrated circuits. However, on-chip monolithic nanoscale light source has remained challenges. Graphene's high current density, thermal stability, low heat capacity and non-equilibrium of electron and lattice temperature properties suggest that graphene as promising thermal light source. Early efforts showed infrared thermal radiation from substrate supported graphene device, with temperature limited due to significant cooling to substrate. The recent demonstration of bright visible light emission from suspended graphene achieve temperature up to ~3000 K and increase efficiency by reducing the heat dissipation and electron scattering. The world's thinnest graphene light source provides a promising path for on-chip light source for optical communication and next-generation display module.