• 한국결정성장학회지
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• 제7권1호
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• pp.126-136
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• 1997

$p^+$/n/n 메사(mesa) 구조를 갖는 6H-SiC UV 광다이오드를 제작하여 입사 파장 200~600 nm의 영역에서 광전류(photocurrent)를 측정하였다. 광다이오드의 파장의 변화에 따라 측정된 광전류는 자외선 영역에서 민감하며 260 nm 근처에서 최대값을 나타내었다. 광다이오드의 광전류 분포를 해석하기 위하여 소수 운반자의 확산모델로 양자효율을 계산하였으며, 계산된 양자효율은 측정된 광전류 분포와 상대적으로 비교되었다. 6H-SiC UV 광다이오드의 광전류 분포는 공핍층에서 광흡수가 포함된 소수운반자의 확산모델에 의하여 해석되었다.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.16-19
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• 2013

Frequency filters with various filtering wavelengths were used in the photoelectric characterization of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and the experimental results were described and analyzed in terms of the photon energy spectral characteristics calculated from the integration of the photon energy and the spectral intensity of transmitted backlight through the filters at each wavelength. From the comparison of the photocurrents and the calculated photon energy spectrums for the filtered ranges of wavelength, it was possible to conclude that the photocurrents are closely related to the photon energy spectrums of the backlight.

• Nuclear Engineering and Technology
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• 제29권6호
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• Bulletin of the Korean Chemical Society
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• 제24권8호
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• pp.1155-1162
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• 2003

Nanocrystalline semiconductor film electrodes have been prepared by sintering three different sizes of TiO₂ nanoparticle sols on conducting indium-tin-oxide (ITO) glass substrate. The electrochemical and photoelectrochemical properties of the prepared electrodes were comparatively investigated. The particle sizes, surface morphologies and crystallinities of the films were studied by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. Cyclic voltammetry and capacitance measurements in the dark implies the formation of depletion layer in the semiconductor films which was usually neglected in the previous studies and shows that flat band potential ($E_{fb}$

• 분석과학
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• 제8권4호
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• pp.669-674
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• 1995

The preparation and characterization of photosemiconductive electrodes of GaAs and of $Fe_2O_3$ doped with MgO or CaO were investigated. The doped $Fe_2O_3$ photosemiconductive electrodes were prepared from thin films sintered at temperatures from 1,100 to $1,450^{\circ}C$, and rapidly quenched in distilled water. The surfaces of the electrodes containing both corundum structure of $Fe_2O_3$ and spinel structure of $Mg_xFe_{3-x}O_4$ or $Ca_xFe_{3-x}O_4$ were analyzed by X-ray diffraction and scanning electron microscopy. The cathodic and anodic photocurrents on these electrodes indicated a critical doping amount of 5-11 wt. %. The photocurrents were enhanced when GaAs electrodes were treated with methylene violet the anodic photo-currents were temporarial enhanced and changed to the cathodic ptotocurrents after the surface was dryed.

• 한국표면공학회지
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• 제53권5호
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• pp.232-240
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• 2020

Cu₂O films as a photocathode for photoelectrochemical water splitting were potentiostatically deposited on FTO glasses. The morphology and composition of the electrodeposited Cu₂O films were adjusted by the applied potentials. The potential-dependent grain size of Cu₂O films was characterized by XRD and SEM analysis. Photoelectrochemical properties of the fabricated Cu₂O photocathodes were investigated with photocurrents as a function of potentials under 1 sun condition of 100mW/㎠. Photocurrents of the electrodeposited Cu₂O films were controlled with the tailored surface morphologies of Cu₂O photocathodes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.572-575
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• 2008

Photo leakage characteristics of a-Si:H TFT were obtained for the illuminations from various backlight sources and the results were compared and analyzed in terms of the photoelectric properties of light. The analysis shows that the photocurrents are related to the wavelengths of the peak intensities of the spectrums of light sources.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2689-2693
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• 2012

Single-walled carbon nanotubes (SWNTs) and $C_{60}$-encapsulated SWNTs ($C_{60}@SWNTs$) are introduced to Ru-sensitized photoelectrochemical cells (PECs), and photocurrents are compared between two cells, i.e., an $RuL_2(NCS)_2$/DAPV/SWNTs/ITO cell and an $RuL_2(NCS)_2$/DAPV/$C_{60}@SWNTs$/ITO cell. [L = 2,2'-bipyridine-4,4'-dicarboxylic acid, DAPV = di-(3-aminopropyl)-viologen, and ITO = indium-tin oxide] The photocurrents are increased by 70.6% in the presence of $C_{60}@SWNTs$. To explain the photocurrent increase, the reverse-field emission method is used, i.e., $RuL_2(NCS)_2$/DAPV/SWNTs/ITO cell (or $RuL_2(NCS)_2$/DAPV/$C_{60}@SWNTs$/ITO cell) as an anode and a counter electrode Pt as a cathode in the external electric field. The improved field emission properties, i.e., ${\beta}$ (field enhancement factor) and emission currents in the reverse-field emission with $C_{60}@SWNTs$ indicate the enhancement of the PEC electric field, which implies the improvement of the electron transfer rate along with the reduced charge recombination in the cell.

• 한국광학회지
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• 제11권6호
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• pp.441-446
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• 2000

Balanced Homodyne Detection 방법으로 국소 진동자의 위상을 조절해 주면서, 각 위상에 대하여 광전류를 측정하여 전류세기의 분포함수를 구하여 이 값을 라돈 역변환을 포함한 Filtered Back Projection하여 빛의 양자역학적 상태를 규정하는 위그너 함수를 구하고 이로부터 간접적으로 밀도행렬을 구한다. 또 위상에 관계없이 구해진 분포함수에서 Pattern함수를 이용하여 밀도행렬을 구할 수 있다. 본 연구에서는 위의 모든 과정을 전산시늉을 통하여 여러 양자역학적 상태 입력 광에 대하여 예측되는 위그너 함수와 밀도 행렬을 구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.281-284
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• 1995

A molecular photodiode was fabricated with hetero-Langmuir-Blodgett (LB) film consisting of an electron accepter(A) and sensitizer. N-Allyl-N-[3-propylamido-N\",N\"-야(n-octadecyl)]-4,4-bipyridum Dibromide and 7,8-dimethyl-10-dodecyl isoalloxan-zine were used as A and S units, respectively. By aligning hefter-LB film of A/S units on ITO glass with an aluminium thin film, a molecular photodiode with the structure of Metal/Insulator/Metal(MIM) was constructed. Due to excitation by irradiation with a 460nm monochromatic light source, the photo-induced unidirectional flow of electrons in the MIM device could be achieved and was detected as photocurrents. The direction of energy flow was in accordance with the energy level profile across the LB films. The photo switching function was achieved and the rectifying characteristics was obserbed in the molecular devise.