• 제목/요약/키워드: photocurrent.

검색결과 496건 처리시간 0.027초

Alg3 두께 변화에 따른 유기 발광 소자의 내장 전압 (Built-in Voltage in Organic Light-emitting Diodes depending on the Alg3 Layer Thickness)

  • 이은혜;윤희명;김태완
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.255-259
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    • 2008
  • Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

Enhanced Photodetection with Hot Electrons in Graphene-mediated Plasmonic Nanostructure

  • Kim, Jeong Hyeon;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.408-408
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    • 2014
  • Graphene has received attention with its high electron mobility and visual transparency as a promising material for optoelectronic and photonic applications. Combination of graphene and conducting nanostructures i.e. plasmonic structures has recently been researched for enhancing light-matter interaction and overcoming diffraction limit of light. Here we show enhanced photodetection of incoherent visible light with graphene-mediated plasmonics. Gold nanoparticles fabricated by focused ion beam was used as an active element of photodetection and graphene was utilized as an interfacing material between nanostructures and electrodes. Hot electrons generated upon plasmon decay within nanoparticles pass over the potential barrier between nanostructure and graphene and give rise to a photocurrent with built-in electric field. We report 76.7% enhancement of photocurrent under resonant irradiation of fiber-coupled halogen lamp compared to the case without light illumination. We showed wavelength-dependent current response arisen from plasmonic nanostructure, providing a good agreement with theoretical calculation.

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Methods to Improve Light Harvesting Efficiency in Dye-Sensitized Solar Cells

  • Park, Nam-Gyu
    • Journal of Electrochemical Science and Technology
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    • 제1권2호
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    • pp.69-74
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    • 2010
  • Methodologies to improve photovoltaic performance of dye-sensitized solar cell (DSSC) are reviewed. DSSC is usually composed of a dye-adsorbed $TiO_2$ photoanode, a tri-iodide/iodide redox electrolyte and a Pt counter electrode. Among the photovoltaic parameters of short-circuit photocurrent density, open-circuit voltage and fill factor, short-circuit photocurrent density is the collective measure of light harvesting, charge separation and charge collection efficiencies. Internal quantum efficiency is known to reach almost 100%, which indicates that charge separation occurs without loss by recombination. Thus, light harvesting efficiency plays an important role in improvement of photocurrent. In this paper, technologies to improve light harvesting efficiency, including surface area improvement by nano-dispersion, size-dependent light scattering efficiency, bi-functional nano material, panchromatic absorption by selective positioning of three different dyes and transparent conductive oxide (TCO)-less DSSC, are introduced.

TiO2 세라믹 전극의 광전기 화학 변환에 미치는 결정립 크기와 첨가제 ZnO의 영향 (Influence of Grain Size and Dopant ZnO on the Photoelectrochemical Conversion in TiO2 Ceramic Electrods)

  • 윤기현;장병규;김태희
    • 한국세라믹학회지
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    • 제26권2호
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    • pp.258-266
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    • 1989
  • The effects of grain size and dopant ZnO on the photoelectrochemical conversion in TiO2 ceramic electrodes have been investigated. The photocurrent increases with increasing grain size in the undoped TiO2 ceramic electrode. In ZnO-doped TiO2 electrodes, the photocurrent decreases with increasing ZnO up to 0.4 wt% due to decrease of donor concentration, and then with further addition of ZnO, photocurrent increases according to the formation of second phase. However, the photoresponse appears at wavelength of 420nm, which is very close to the energy band gap of TiO2, regardless of grain size and amount of ZnO.

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분무 열분해법에 의해 증착된 $SnO_2$ 박막의 광전기 화학 변환 특성 (Photoelectrochemical Conversion of $SnO_2$ Films Deosited by Spray Pyrolysis)

  • 김태희;박경봉;윤기현
    • 한국세라믹학회지
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    • 제28권3호
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    • pp.197-204
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    • 1991
  • The photoelectrochemical conversion in SnO2 films deposited by spray pyrolysis using SnCl4-alcohol solution and N2 gas has been studied. The photocurrent increases with increasing deposition temperature up to 40$0^{\circ}C$ and then decreases, and the electron affinity decreases as the deposition temperature increases to 40$0^{\circ}C$. As the concentration of the spray solution increases, the photocurrent reaches a maximum value at the concentration of 0.05M, and the electron affinity is consistent. As the thickness of the film increases, the photocurrent increases with a maximum value at the thickness of 4600$\AA$, and electron affinity does not change.

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NSOM 장치의 제작 및 광특성 연구

  • 이주인;;유성규;신정규;유필원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.75-75
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    • 1999
  • 100nm 공간 분해능을 갖는 NSOM 장치를 자체 제작하고 computer를 이용하여 측정을 자동화 하였다. 압전소자의 인가된 전압에 대한 이동거리를 x, y, z 축에 따라 측정 및 보정하고 NSOM topography 사진을 얻는데 성공하였다. 이때 이동거리는 x, y 축은 약 20nm/V이고, z 축은 2.5nm/V 이었다. 하지만 압전소자의 인가된 전압에 따른 이동거리의 비선형성에 대한 보정 및 feedback 제어의 안정화 등은 앞으로 해결해야할 문제로 남아 있다. 자체제작된 NSOM을 이용하여 GaAs/AlGaAs MQWs와 InAs/GaAs QDs 시료에 대한 PL, photocurrent 및 reflectance 등 분광 실험을 성공적으로 수행하였다. PL 실험의 경우 첨예한 광 섬유에 보내진 레이저 광의 세기가 매우 미약하기 (수십 nW) 때문에 탐침 크기가 약 500nm 일 때 측정되었다. 하지만 photocurrent 실험에서는 시료를 검출기로 사용하기 때문에 신호대 잡음비가 PL에 비하여 100배 이상 좋아지는 것을 발견하였다. 따라서 NSOM을 이용한 photocurrent 방법은 앞으로 NSOM의 공간 분해능을 높이는데 하나의 돌파구를 마련해 줄 것으로 기대된다.

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Measurement and Interpretation of Undergraduate Students' Writing about the Experiments of the Photoelectric Effect

  • Jho, Hunkoog;Ji, Youngrae
    • 새물리
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    • 제68권11호
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    • pp.1231-1239
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    • 2018
  • This study aimed at examining undergraduate students' writing about experiments related to the photoelectric effect and giving some implications for experiment education. Thus, this study analyzed 26 students' reports about three kinds of experiments: measuring Planck's constant, comparing the photocurrent and the photovoltage across the intensity of light, and comparing the photocurrent and the photovoltage across the frequency of light. In the measurements, less than 25% of the students expressed the data to the correct number of significant figures even though two-thirds of the students successfully obtained the data given in the manual. In terms of interpretation, the students were not aware of the physical meanings of the detailed parts in the graphs. Even though over 50% of the students drew a line relating photocurrent to voltage, no students compared the theoretical to the empirical data or made a judgment as to whether of not the background theory really fit the experiment. The research findings showed that insufficient knowledge and skills for physics inquiry may be an obstacle in performing the experiments well.

Photoelectrochemical Hydrogen Production on Textured Silicon Photocathode

  • Oh, Il-Whan
    • 전기화학회지
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    • 제14권4호
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    • pp.191-195
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    • 2011
  • Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

광전도체 $ZnGa_2Se_4$ 박막의 전기적 특성

  • 홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.381-381
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    • 2010
  • From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa2Se4singlecrystalthinfilm, wehavefoundthatthevaluesofspinorbitsplitting$\Delta$soandthecrystalfieldsplitting$\Delta$crwere251. 9meVand 183.2me Vat 10K, respectively. FromthephotolwninescencemeasurementontheZnGa2Se4singlecrystalthinfilm,weobservedfreeexcition(EX)existingonlyhighqualitycrystalandneutralboundexiciton(A0,X)havingverystrongpeakintensity.Then,thefull-width-at-half-maximum(FWHM)andbindingenergyofueutralacceptorboundexcitionwerel1meVand24.4meV,respectivity.ByHaynesrule,an activation energy of impurity was 122 meV.

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