• Rapid Communication in Photoscience
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• 제3권4호
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• pp.67-69
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• 2014

Bis(2-thienyl)-diketopyrrolopyrrole having two $Zn^{II}$-cylcens (DPPCy) was synthesized. DPP-aggregates were constructed by self-organization of DPPCy and $dT_n$-DNAs. In the presence of L-ascorbic acid as an electron sacrifice reagent, the DPP aggregates immobilized on a gold electrode exhibit good anodic photocurrent responses as well as cathodic photocurrent responses in the presence of methyl viologen. The anodic photocurrent responses depend on the DNA lengths because of the formation of uniform DPP-aggregates corresponding to the DNA lengths. The present results show that photocurrent responses of the DPP-aggregates can be controlled by DNA lengths and electron sacrifice reagents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.77-80
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• 2002

In order to enhence the photocurrent multiplication process, we controlled the irradiation light and the material of cathode layer of organic light emitting diodes (OLEDs). The structures of OLEDs were indium tin oxaide (ITO)/ copper(II) phthalocyanine (CuPc)/triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/ aluminum (Al). We found that OLEDs were changed by the photocurrent and free charge carrier multiplication process due to the irradiation of light. The rate of photocurrent was increased by the irradiation of red and blue light.

• Bulletin of the Korean Chemical Society
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• 제24권10호
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• pp.1501-1504
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• 2003

Single-wall carbon nanotubes (SWCN) were integrated in $TiO_2$ film and the beneficial influence on the dyesensitized solar cells in terms of improved photocurrent was studied in the light of static J-V characteristics obtained both under illumination and in the dark, photocurrent transients, IPCE spectra and impedance spectra. Compared with a solar cell without SWCN, it is established that the photocurrent density of the modified cell increases at all applied potentials. The enhanced photocurrent density is correlated with the augmented concentration of electrons in the conduction band of $TiO_2$ and with increased electrical conductivity. Explanations are additionally corroborated with the help of SEM, Raman spectra and dye-desorption measurements.

• 센서학회지
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• 제31권3호
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• pp.151-155
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• 2022

In this paper, we present a highly-sensitive gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector using multi-finger structure whose photocurrent increases in proportion to the number of fingers. The drain current that flows through a MOSFET using multi-finger structure is proportional to the number of fingers. This study intends to confirm that the photocurrent of a GBT MOSFET-type photodetector that uses the proposed multi-finger structure is larger than the photocurrent per unit area of the existing GBT MOSFET-type photodetectors. Analysis and measurement of a GBT MOSFET-type photodetector that utilizes a multi-finger structure confirmed that photocurrent increases in ratio to the number of fingers. In addition, the characteristics of the photocurrent in relation to the optical power were measured. In order to determine the influence of the incident the wavelength of light, the photocurrent was recorded as the incident the wavelength of light varied over a range of 405 to 980 nm. A highly-sensitive GBT MOSFET-type photodetector with multi-finger structure was designed and fabricated by using the Taiwan semiconductor manufacturing company (TSMC) complementary metal-oxide-semiconductor (CMOS) 0.18 um 1-poly 6-metal process and its characteristics have been measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.121-122
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• 2006

Single crystal of $CdIn_2Te_4$ were grown by the Bridgman method without using seed crystals. From photocurrent measurements, its was found that three peaks, A, B, and C, correspond to the instrinsic transition from the valence band states of ${\Gamma}_7$(A), ${\Gamma}_6$(B), and ${\Gamma}_7$(C) to the conducton band states of ${\Gamma}_6$, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 eV and 0.1119 eV, respectively, from found to be photocurrent spectroscopy.

• 센서학회지
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• 제31권1호
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• pp.12-15
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• 2022

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.84-87
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• 2003

HgTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe QDs revealed the strong exitonic peak in the IR region. And the photocurrent measurement of colloidal QDs are performed using IR light source. The lineshape of the wavelength dependent intensity of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. The channels of dark current are supposed $H_2O$ containing in thiol by the remarkable drop of current at the state of vacuum. It was thought that the proper passivation layer on the top of HgTe film reduce the dark current and the adequate choice of capping material improves the efficiency of the photocurrent in the HgTe QDs. This study suggests that HgTe QDs are very prospective materials for optoelectronics including photodetectors in the IR range.

• 폴리머
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• 제39권2호
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• pp.353-358
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• 2015

수용액 기반 광전류 생성 연구는 자연의 광합성을 모사하여 친환경적으로 전기를 생산하기 위한 연구의 하나로서 주목받고 있다. 본 연구에서는 지질 소액포에 집적된 전도성 올리고전해질과 수용액 중에 용해된 형광염료를 이용하여 광전류 생성 소자를 제작하고, 두 염료 사이의 형광공명 에너지전달 현상이 결과적인 광전류 생성에 미치는 영향에 대해 조사하였다. 양극성 전도성 올리고전해질은 지질 이중층 내에 집적되어 지질 소액포의 형태로 수용액 중에 분산되었고 이 수용액에 형광염료를 농도를 변화시키며 형광공명 에너지전달 효율과 광전류의 변화를 측정하였다. 전자공여체인 전도성 올리고전해질에서 전자수용체인 형광염료로 에너지전달 효율은 형광염료 농도의 증가에 따라 증가하였으며, 광전류 생성은 증가 후 감소하였다. 광전류 변화에 있어서 염료 사이의 에너지전달과 전자수 송체의 역할에 대해 논의하였다.

• Corrosion Science and Technology
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• 제2권2호
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• pp.68-74
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• 2003

The effects of Niobium on the structure and properties(especially electric properties) of passive film of Zirconium alloys in pH 8.5 buffer solution are examined by the photo-electrochemical analysis. For Zr-xNb alloys (x = 0, 0.45, 1.5, 2.5 wt%), photocurrent began to increase at the incident energy of 3.5 ~ 3.7 eV and exhibited the $1^{st}$ peak at 4.3 eV and the $2^{nd}$ peak at 5.7 eV. From $(i_{ph}hv)^{1/2}$ vs. hv plot, indirect band gap energies $E_g{^1}$= 3.01~3.47 eV, $E_g{^2}$= 4.44~4.91 eV were obtained. With increasing Nb content, the relative photocurrent intensity of $1^{st}$ peak significantly increased. Compared with photocurrent spectrum of thermal oxide of Zr-2.5Nb, It was revealed that $1^{st}$ peak in photocurrent spectrum for the passive film formed on Zr-Nb alloy was generated by two types of electron transitions; the one caused by hydrous $ZrO_2$ and the other created by Nb. Two electron transition sources were overlapped over the same range of incident photon energy. In the photocurrent spectrum for passive film formed on Zr-2.5Nb alloy in which Nb is dissolved into matrix by quenching, the relative photocurrent intensity of $1^{st}$ peak increased, which implies that dissolved Nb act as another electron transition source.

• 전기학회논문지
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• 제62권1호
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• pp.76-82
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• 2013

The solar cell is a device to convert light energy into electric, which supplies power to the external load when exposed to the incident light. The photocurrent and voltage occurred in the device are significant factors to decide the output power of solar cells. The crystalline silicon solar cell module has photocurrent loss due to light reflections on the glass and EVA(Ethylene Vinyl Acetate). These photocurrent loss would be a hinderance for high-efficiency solar cell module. In this paper, the quantitative analysis for the photocurrent losses in the 300-1200 wavelength region was performed. The simulation method with MATLAB was used to analyze the reflection on a front glass and EVA layer. To investigate the intensity of light that reached solar cells in PV(Photovoltaic) module, the reflectance and transmittance of PV modules was calculated using the Fresnel equations. The simulated photocurrent in each wavelength was compared with the output of real solar cells and the manufactured PV module to evaluate the reliability of simulation. As a result of the simulation, We proved that the optical loss largely occurred in wavelengths between 300 and 400 nm.