• Journal of Photoscience
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• v.11 no.3
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• pp.101-106
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• 2004

The photorefractive composites fabricated by blending NLO chromophores such as 3-(4-{bis-[4-(2-ethylhexyloxy)-phenyl]-amino}-phenyl)-2-isocyano-acrylonitrile (PAIA), bis-[4-(2-ethyl-hexyloxy)-phenyl]-{4-[2-(4-nitrophenyl)-vinyl]-phenyl}-amine (PNPA) with photoconducting crosslinkable matrix, bis-(4-ethynylphenyl)-(4-octyloxyphenyl)-amine (BEOPEA), showed photorefractive property due to the high composition of NLO chromophores caused by introducing alkoxy chain, and many problems faced in typical organic photorefractive systems such as timeconsuming chemical synthesis, difficulty in rational design, intrinsic instability and phase separation could be avoided.

• Macromolecular Research
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• v.11 no.6
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• pp.431-436
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• 2003

A new photoconducting polymer, diphenyl hydrazone-substituted polysiloxane, was successfully synthesized by the hydrosilylation method and characterized by FT-IR, $^1$H-NMR, and $^{29}$ Si-NMR spectroscopy. The glass transition temperature (T$_{g}$) of the polysiloxane having pendant diphenyl hydrazone was ca. 62 $^{\circ}C$, which enabled a component of a low-T$_{g}$ photorefractive material to be prepared without the addition of any plasticizers. This polysiloxane, with 1 wt% of $C_{60}$ dopant, showed a high photoconductivity (2.8 ${\times}$ 10$^{-12}$ S/cm at 70 V/${\mu}{\textrm}{m}$) at 633 nm, which is necessary for fast build-up of the space-charge field. A photorefractive composite was prepared by adding a nonlinear optical chromophore, 2-{3-[2-(dibutylamino)-1-ethenyl]-5,5-dimethyl-2-cyclohexenylidene} malononitrile, into the photoconducting polysiloxane together with $C_{60}$ . This composite shows a large orientation birefringence ($\Delta$n = 2.6 ${\times}$ 10$^{-3}$ at 50 V/${\mu}{\textrm}{m}$) and a high diffraction efficiency of 81 % at an electric field of 40 V /${\mu}{\textrm}{m}$.textrm}{m}$.EX>.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.561-562
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• 2010

• Journal of Photoscience
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• v.10 no.3
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• pp.251-255
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• 2003

The composites fabricated by blending nonlinear optical (NLO) chromophore such as {4-[2-(4-nitrophenyl)-vinyl] phenyl}diphenylamine (NVPDA) with photoconducting crosslinkable matrix, bis-(4-ethynylphenyl)-(4-octyloxy-phenyl)amine (BEOPEA), showed photorefractive property. Many problems faced in typical organic photorefractive systems such as time-consuming chemical synthesis, difficulty in rational design, intrinsic instability and phase separation could be avoided by this fabrication method.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.528-530
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• 2003

We present a novel photo-addressable electronic paper using an electrophoretic device, which can show and sustain the 2D images transferred by the UV illumination. The device consists of the organic photoconducting layer reacting with the UV illumination and the electronic ink (white particles and blue dye) dispersing in a suspending medium. The voltage impression under illuminating of UV make an image be transferred to the electrophoretic cell. The transferred image can be maintained by the bistability of the electrophoretic device.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.571-574
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• 2002

The photorefractive polymeric composite with good performance was prepared. The carbazole-substituted polysiloxane sensitized by 2,4,7-trinitro-9-fluorenone was used as a photoconducting medium and 1-[4-(2-nitrovinyl)phenyl]piperidine was added as an optically nonlinear chromophore. The photorefractive property of polymer was determined by diffraction efficiency using a 100 ㎛-thick film. The maximum diffraction efficiency ( ηmax) of 71% was obtained at the electric field of 70 V/ ㎛. The potential of the current polymer material as a holographic recording medium was evaluated by the demonstration of holographic recording and subsequent reading of optical image.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.97-101
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• 2009

A new approach was applied to examine the charge generation and transport in organic photoconductive devices by Monte‐Carlo simulation utilizing multiple site interactions of carriers with all other charges within Coulomb radius. Stepwise generation frame was considered first by a charge separation process that was counted in two separate transactions, i.e., hopping against physical decay and dissociation against recombination. Thereafter, diffusion/ drifting process of free carriers was counted to follow. This method enables to examine readily the photocurrent generated alongside the charge generation efficiency. The field and temperature dependences of the efficiency and photocurrent were obtained comparable to Onsager’s and experimental data.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.406-410
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• 2000

Using the hot-wall epitaxy method, we grew a $Hg_{1-x}Cd_xTe$ (MCT) thin film in-situ after growing (111) CdTe of 9 $mu \textrm{m}$ as a buffer layer. The value of FWHM of double crystal x-ray diffraction rocking curve was 125 arcsec and the surface morphology was clean with a small roughness of 10 nm. From measuring the photocurrent of the grown MCT thin film, the maximum peak wavelength and the cut-off wavelength were 1.1050 $\mu\textrm{m}$ (1.1220 eV) and 1.2632 $\mu\textrm{m}$ (0.9815 eV), respectively. This peak wavelength corresponds to the peak of the band gap due to the intrinsic transition of the photoconductor. Therefore, the MCT thin film could be used as the photoconducting detector sensing a near-IR wavelength band from 1.0 to 1.6 $\mu\textrm{m}$.