• Bulletin of the Korean Chemical Society
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• v.13 no.5
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• pp.553-556
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• 1992

The ${CO}_2$ laser absorption measurement of ${CH}_3{CH}_2Br$ utilizing photoacoustic (PA) technique was performed using a cw and a pulsed ${CO}_2$ lasers. The absorption profile in the ${CO}_2$ laser wavelength region (9-10 ${\mu}$m) and the macroscopic small signal absorption cross section at 10P(20) (10.59 ${\mu}$m, 944 $cm^{-1}$) laser line were measured using a cw ${CO}_2$ laser. The laser fluence dependence on infrared multiphoton absorption (IRMPA) was also studied with a pulsed TEA ${CO}_2$ laser at 10P(20) laser line. In view of monotonic increase of PA signal with the rise of laser fluence, it was suggested that the anharmonicity in pumped vibration mode did not restrict ir multiphoton absorption in ${CH}_3{CH}_2Br$ system as found in large molecular system.

• Korean Journal of Optics and Photonics
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• v.2 no.4
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• pp.219-226
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• 1991

The phase and the amplitude of the photoacoustic signal were measured as a function of chopping frequency for several kinds of widely used thin metallic plates (stainless steel 304, brass, aluminum and copper) attached to plexiglass backing. The experimental data have been analyzed systematically by parameter estimation technique based on the two-layer model developed from Rosencwaig-Gersho (R-G) theory. Using this analysis, the values of thermal diffusivity and thermal effusivity of the materials have been determined.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.91-94
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• 1990

헬름홀쯔 공명기에서 광음향 셀과 광음향 신호의 특성을 고찰하였고, CO2 농도에 따른 광음향 신호를 측정한 결과 2.4 ppm의 CO2를 검출하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.431-432
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• 2000

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.252-253
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• 2002

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2431-2438
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• 2013

The paper presents a procedure for how to development and theoretical review on Dissolved Gas Analyzer. the information of abnormal thermal stress on electrical power equipment by testing the gas is validated to easy by the gas analyzer presented in the paper. the analyzed information is used to evaluate the stability of electrical power equipment. the existing and selling DGA(dissolved gas analyzer) is so expensive and vast that all DGA product comes from foreign country. The objective of the paper is to prove that PAS(photoacoustic spectroscopy) based on a compact portable DGA solve the fixed type of DGA in order to eliminate the occurring issue directly or indirectly. the proposed DGA is easy to handle, and this can also analysis in real time for testing electrical power equipment. By applying the proposed portable, DGA be utilized in the currently electrical power equipment that are being implemented to reduce cycle of analysis of dissolved gas, it can contribute to improving safety by providing the agility of the evaluation of degradation.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.380-384
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• 1998

As the development of ultrahigh power laser system, the laser mirrors must require high-resistant and effectively cooled. So, the study for the optical multilayer systems having large thermal diffusivity become important. In this study, we designed and fabricated two-layer anti-reflection (AR) optical coating samples, in different evaporation conditions of coating speeds (10, 20 $\AA$/s) and substrate temperatures (50, 100, 150, 20$0^{\circ}C$), using two dielectric materials $MgF_2$ and ZnS which have different refractive indices and measured the through-plane thermal diffusivity by using photoacoustic effect. The optical thicknesses of $MgF_2$ and ZnS layer were fixed as 5/4λ (λ=514.5nm) and λ, respectively, and the thermal diffusivity of the samples fabricated in the different conditions was obtained from the measured amplitude of photoacoustic signals by changing chopping frequency of $Ar^+$ layer beam. The results told us that the thermal diffusivity of the sample fabricated in the condition of 10 $\AA$/s and 15$0^{\circ}C$ showed the largest value.

• Archives of Plastic Surgery
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• v.48 no.3
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• pp.323-328
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• 2021

Background Lymphaticovenular anastomosis (LVA) is a minimally invasive surgical procedure used to treat lymphedema. Volumetric measurements and quality-of-life assessments are often performed to assess the effectiveness of LVA, but there is no method that provides information regarding postoperative morphological changes in lymphatic vessels and veins after LVA. Photoacoustic lymphangiography (PAL) is an optical imaging technique that visualizes the distribution of light-absorbing molecules, such as hemoglobin or indocyanine green (ICG), and provides three-dimensional images of superficial lymphatic vessels and the venous system simultaneously. In this study, we performed PAL in lymphedema patients before and after LVA and compared the images to evaluate the effect of LVA. Methods PAL was performed using the PAI-05 system in three patients (one man, two women) with lymphedema, including one primary case and two secondary cases, before LVA. ICG fluorescence lymphography was performed in all cases before PAL. Follow-up PAL was performed between 5 days and 5 months after LVA. Results PAL enabled the simultaneous visualization of clear lymphatic vessels that could not be accurately seen with ICG fluorescence lymphography and veins. We were also able to observe and analyze morphological changes such as the width and the number of lymphatic vessels and veins during the follow-up PAL after LVA. Conclusions By comparing preoperative and postoperative PAL images, it was possible to analyze the morphological changes in lymphatic vessels and veins that occurred after LVA. Our study suggests that PAL would be useful when assessing the effect of LVA surgery.

• Atmosphere
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• v.25 no.1
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• pp.185-191
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• 2015

Ambient measurements of aerosol light absorption (${\sigma}_a$) and scattering coefficients (${\sigma}_s$) were done at Gosan climate observatory during summer 2008 using a 3-wavelength photoacoustic soot spectrometer (PASS). PASS was deployed photoacoustic method for light absorption and integrated nephelometry for light scattering measurements. The ${\sigma}_a$ and ${\sigma}_s$ from PASS were compared with those from co-located aethalometer and nephelometer measurements. The aethalometer measurements of ${\sigma}_a$ correlated reasonably well with photoacoustic measurements, but the slope of the linear fitting line indicated the PASS measurement values of ${\sigma}_a$ were larger by a factor of 1.53. The nephelometer measurement values of ${\sigma}_s$ correlated very well with PASS measurements of ${\sigma}_s$, with a slope of 1.12 and a small offset. Comparing to the aethalometer measurements, the photoacoustic measurements of ${\sigma}_a$ didn't exhibit a significant (i.e., the ratio between aethalometer and PASS increased) change with increasing relative humidity (RH). The ratio of ${\sigma}_s$ between nephelometer and PASS increased with increasing RH, especially when the RH increased beyond 80%. This apparent increase in ${\sigma}_s$ with RH may be due to the contribution of hygroscopic growth of aerosols.

• Journal of the Korean Chemical Society
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• v.48 no.6
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• pp.553-560
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• 2004

In this experiment, a three dimensional structure analysis was carried out to examine the surface defects of semiconductor made artificially on known scale. It was investigated the three dimensional imaging according to the sample depth and the thermal diffusivity as well as the carrier transport properties. The thermal diffusivity measurement of the intrinsic GaAs semiconductor was also analyzed by the difference of frequency-dependence photoacoustic signals from the sample surface of different conditions. Thermal properties such as thermal diffusion length or thermal diffusivity of the Si wafer with and without defects on the surface were obtained by interpreting the frequency dependence of the PA signals. As a result, the photoacoustic signal is found to have the dependency on the shape and depth of the defects so that their structure of the defects can be analyzed. This method demonstrates the possibility of the application to the detection of the defects, cracks, and shortage of circuits on surface or sub-surface of the semiconductors and ceramic materials as a nondestructive testing(NDT) and a nondestructive evaluation(NDE) technique.