• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.76-76
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• 2007

Several kinds of photo-chromic polymers containing push-pull structure were synthesized and investigated on optical patterning by photo-induced surface relief gratings (SRG) technique. The azobenzene segment was introduced as a functional group for a photo-triggered tran-cis isomerization. Consequently, we have fabricated micro-size regular pattern by one-step process without photo-mask.

• 동력기계공학회지
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• 제20권4호
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• pp.75-82
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• 2016

In this paper, we developed a 3D printing system using a photo-curing resin in order to reduce the surface roughness of a sculpture produced with the 3D printer. Using the pattern of the resulting variable thickness, that gave rise to a stepped shape, and the area error of the photo-curable sculpture, a study was carried out for the process to reduce the surface roughness. At a given value of stage velocity (40~70 mm/s) and output air pneumatic pressure (20~60 kPa), the minimum pattern thickness of the pattern was achieved $65{\mu}m$ and the maximum pattern thickness of up to $175{\mu}m$. To increases the pattern resolution to about $40{\mu}m$, the process conditions should be optimized. 3D surface Nano profiler was used to find the surface roughness of the sculpture that was measured to be minimum $4.7{\mu}m$ and maximum $8.7{\mu}m$. The maximum surface roughness was reduced about $1.2{\mu}m$ for the maximum thickness of the pattern. In addition, a FDM was used to fabricate the same sculpture and its surface roughness measurements were also taken for comparison with the one fabricated using photo-curing. Same process conditions were used for both fabrication setups in order to perform the comparison efficiently. The surface roughness of the photo-curable sculpture is $5.5{\mu}m$ lower than the sculpture fabricated using FDM. A certain circuit patterns was formed on the laminated surface of the photo-curable sculpture while there was no stable pattern on the laminated surface of the FDM based sculpture the other hand.

• 한국광학회지
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• 제21권1호
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• pp.6-11
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• 2010

아크릴레이트계 모노머를 사용한 최적화 된 포토폴리머에 안트라센 형광폴리머를 첨가하여 형광 특성을 가지는 포토폴리머를 제조하고, 514 nm 레이저를 이용하여 2-beam coupling 방법으로 형광 포토폴리머 필름 위에 회절격자를 형성하였다. 기록 시작 후 30초 이내에 선명한 fluorescent line pattern 이 형성되었으며, 회절격자 형성 뒤, 패턴이 형성된 부분에서 형광 세기의 증가가 관찰되었다. 기록 시 간섭 빔 앞에 mask pattern 을 이용하여 $50\;{\mu}m$ gap electrode 패턴을 형성하였다. 이 때 형성된 패턴은 micron scale gap패턴 안에 회절격자로부터 생성된 submicron scale의 grating line을 보였다. 이는 beam의 광 고분자 film 표면에 대한 각도($3.6^{\circ}$, $15^{\circ}$), 패턴에 사용된 광 고분자의 굴절률 등으로부터 Bragg's equation 을 사용하여 계산된 이론적인 grating 간격 ($0.6\;{\mu}m$) 과 오차범위 안에서 일치 하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1267-1268
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• 2013

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.339-339
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• 2010

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

• 한국정밀공학회지
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• 제13권12호
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• pp.30-37
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• 1996

On-line process control equipment for CO$_{2}$ laser cutting is not available for industrial applications. The major part of the industrial laser cutting machines are adjusted off-line by highly educated engineers. The quality inspection of the sample is visual and referred to different quality scales. Due to the lack of automation the potential laser users hesitate to implement the cutting method. The first step toward an automation of the process is the development of a process monitoring system and the research is cincentrated on the area of on-line quality monitoring during CO$_{2}$ laser cutting. The method is based on the detection of the emitted light from the cutting front by photo diode. The developed monitoring system consists of the OP Amplifier, A/D convertor, power supply and PC. The signal from the photo diode has been undertaken from Fourier analysis and statistical analysis with real time. The photograph of striation pattern was taken by metallurgical microscope. As a result, it is possible to predict the striation pattern according to the beam traveling speed.

• Design & Manufacturing
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• 제12권1호
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• Macromolecular Research
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• 제17권10호
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• pp.791-796
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• 2009

An electrochemically and photochemically polymerizable monomer, 2-((2,3-dihydrothieno[3,4-b] [1,4]dioxin-2-yl)methoxy)ethyl methacrylate (EDOT-EMA), was explored for patterning of poly(3,4-ethylenedioxythiophene) (PEDOT) via side chain cross-linking. The polymer from EDOT-EMA was deposited electrochemically to produce polymeric EDOT (PEDOT-EMA), which was directly photo-patterned by UV light as the side EMA groups of PEDOT-EMA were polymerized to give cross-linked EMA (PEDOT-PEMA). Absorption and FTIR studies of the UV-exposed film (PEDOT-PEMA) indicated that the photo-patterning mainly originated from the photo cross-linking of the methacrylates in the side-chain. After irradiation of the film, the conductivity of the irradiated area decreased from $5.6{\times}10^{-3}$ S/cm to $7.2{\times}10^{-4}$ S/cm, possibly due to bending of the conductive PEDOT channel as a result of the side chain cross-linking. The patterned film was applied to a solid state electrochromic (EC) cell to obtain micro-patterned EC cells with lines up to 5 ${\mu}m$ wide.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.72-73
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• 2012

Metal line을 형성하는 방법에는 그라비아 인쇄, 잉크젯 인쇄, photo 공정 후 박막 증착 공정 등을 많이 사용한다. 본 연구에서는 Micro-imprinting 공정과 DFR photo lithography 공정을 통해 음각의 미세한 pattern을 형성한 후 sputtering과 printing을 이용하여 pattern의 filling을 통해 metal line을 구현하는 것을 목표로 하였다. Pattern을 형성한 후 RIE 공정을 통해 기판 표면의 친수성 처리를 하고, SAM 공정을 통해 코팅 막의 소수성 처리를 하였다. Sputtering과 전면 프린팅 및 건조 후 strip 공정을 통해 metal line을 형성하고, 이에 대한 표면 특성과 전기적 특성을 분석하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.12.1-12.1
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• 2009

For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.