• Title/Summary/Keyword: photo-pattern

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Optical Patterning and Applications of Photo-chromic Polymers (광변색 고분자의 광학적 패터닝과 응용)

  • Kim, Jun-Young;Fukuda, Takashi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.76-76
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    • 2007
  • Several kinds of photo-chromic polymers containing push-pull structure were synthesized and investigated on optical patterning by photo-induced surface relief gratings (SRG) technique. The azobenzene segment was introduced as a functional group for a photo-triggered tran-cis isomerization. Consequently, we have fabricated micro-size regular pattern by one-step process without photo-mask.

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A Study on the reduction of surface roughness by analyzing the thickness of photocurable sculpture (광조형물의 패턴두께에 따른 표면 거칠기 저감을 위한 공정연구)

  • Kim, Young-Su;Yang, Hyoung-Chan;Kim, Go-Beom;Dang, Hyun-Woo;Doh, Yang-Hoi;Choi, Kyung-Hyun
    • Journal of Power System Engineering
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    • v.20 no.4
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    • pp.75-82
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    • 2016
  • In this paper, we developed a 3D printing system using a photo-curing resin in order to reduce the surface roughness of a sculpture produced with the 3D printer. Using the pattern of the resulting variable thickness, that gave rise to a stepped shape, and the area error of the photo-curable sculpture, a study was carried out for the process to reduce the surface roughness. At a given value of stage velocity (40~70 mm/s) and output air pneumatic pressure (20~60 kPa), the minimum pattern thickness of the pattern was achieved $65{\mu}m$ and the maximum pattern thickness of up to $175{\mu}m$. To increases the pattern resolution to about $40{\mu}m$, the process conditions should be optimized. 3D surface Nano profiler was used to find the surface roughness of the sculpture that was measured to be minimum $4.7{\mu}m$ and maximum $8.7{\mu}m$. The maximum surface roughness was reduced about $1.2{\mu}m$ for the maximum thickness of the pattern. In addition, a FDM was used to fabricate the same sculpture and its surface roughness measurements were also taken for comparison with the one fabricated using photo-curing. Same process conditions were used for both fabrication setups in order to perform the comparison efficiently. The surface roughness of the photo-curable sculpture is $5.5{\mu}m$ lower than the sculpture fabricated using FDM. A certain circuit patterns was formed on the laminated surface of the photo-curable sculpture while there was no stable pattern on the laminated surface of the FDM based sculpture the other hand.

Fluorescent Pattern Generation on the Fluorescent Photopolymer with 2-beam Coupling Method (2-beam Coupling 방법을 이용한 광 고분자 형광 패턴 형성)

  • Kim, Yoon-Jung;Kim, Jeong-Hun;Sim, Bo-Yeon;Lee, Myeong-Kyu;Kim, Eun-Kyoung
    • Korean Journal of Optics and Photonics
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    • v.21 no.1
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    • pp.6-11
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    • 2010
  • Fluorescent photopolymer film was prepared with composition containing acrylate monomer, binder, a visible light sensitive photo initiator, and fluorescent anthracene polymer. A fluorescent grating pattern was inscribed on the photopolymer film using a 2-beam coupling method. A 514 nm laser was coupled to generate a beam-interference pattern. A highly fluorescent diffractive line pattern was formed on the fluorescent photopolymer within 30 sec. of exposure. The fluorescence intensity was highly enhanced in the patterned area, possibly due to the change in the environment of the fluorescent polymers by the photo-polymerization of monomers. Under a photo-mask, a gap electrode pattern was formed of fluorescent gratings with a sub-micron scale, which was matched well to the calculated value ($2.5\;{\mu}m$ and $0.6\;{\mu}m$) based on the refractive index of the photopolymer and beam incident angle ($3.4^{\circ}$, $15^{\circ}$) to the photopolymer surface.

Photo-assisted GaN wet-chemical Etching using KOH based solution (KOH계열 수용액을 이용한 GaN 박막의 photo-assisted 식각 특성)

  • Lee, Hyoung-Jin;Song, Hong-Ju;Choi, Hong-Goo;Ha, Min-Woo;Roh, Cheong-Hyun;Lee, Jun-Ho;Park, Jung-Ho;Hahn, Cheol-Koo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.339-339
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    • 2010
  • Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

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Process Monitoring in Laser Beam Cutting by Photo Diode (레이저 절단에서 광소자를 이용한 가공공정 모니터링)

  • Chang, Ook-Jin;Kim, Bong-chae;Kim, Jae-Do
    • Journal of the Korean Society for Precision Engineering
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    • v.13 no.12
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    • pp.30-37
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    • 1996
  • On-line process control equipment for CO$_{2}$ laser cutting is not available for industrial applications. The major part of the industrial laser cutting machines are adjusted off-line by highly educated engineers. The quality inspection of the sample is visual and referred to different quality scales. Due to the lack of automation the potential laser users hesitate to implement the cutting method. The first step toward an automation of the process is the development of a process monitoring system and the research is cincentrated on the area of on-line quality monitoring during CO$_{2}$ laser cutting. The method is based on the detection of the emitted light from the cutting front by photo diode. The developed monitoring system consists of the OP Amplifier, A/D convertor, power supply and PC. The signal from the photo diode has been undertaken from Fourier analysis and statistical analysis with real time. The photograph of striation pattern was taken by metallurgical microscope. As a result, it is possible to predict the striation pattern according to the beam traveling speed.

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A study on processing characteristics of plasma etching using photo lithography (Photo lithography을 이용한 플라즈마 에칭 가공특성에 관한 연구)

  • Baek, Seung-Yub
    • Design & Manufacturing
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    • v.12 no.1
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    • pp.47-51
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    • 2018
  • As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

Electrochromic Pattern Formation by Photo Cross-linking Reaction of PEDOT Side Chains

  • Kim, Jeong-Hun;Kim, Yu-Na;Kim, Eun-Kyoung
    • Macromolecular Research
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    • v.17 no.10
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    • pp.791-796
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    • 2009
  • An electrochemically and photochemically polymerizable monomer, 2-((2,3-dihydrothieno[3,4-b] [1,4]dioxin-2-yl)methoxy)ethyl methacrylate (EDOT-EMA), was explored for patterning of poly(3,4-ethylenedioxythiophene) (PEDOT) via side chain cross-linking. The polymer from EDOT-EMA was deposited electrochemically to produce polymeric EDOT (PEDOT-EMA), which was directly photo-patterned by UV light as the side EMA groups of PEDOT-EMA were polymerized to give cross-linked EMA (PEDOT-PEMA). Absorption and FTIR studies of the UV-exposed film (PEDOT-PEMA) indicated that the photo-patterning mainly originated from the photo cross-linking of the methacrylates in the side-chain. After irradiation of the film, the conductivity of the irradiated area decreased from $5.6{\times}10^{-3}$ S/cm to $7.2{\times}10^{-4}$ S/cm, possibly due to bending of the conductive PEDOT channel as a result of the side chain cross-linking. The patterned film was applied to a solid state electrochromic (EC) cell to obtain micro-patterned EC cells with lines up to 5 ${\mu}m$ wide.

Study on fine pattern with Micro filling using Etching-free process (Etching-free 공정 적용 Micro filling 미세 패턴 구현 연구)

  • Kim, Wan-Gyu;Yun, Yeong-U;Lee, Seong-Ui
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.72-73
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    • 2012
  • Metal line을 형성하는 방법에는 그라비아 인쇄, 잉크젯 인쇄, photo 공정 후 박막 증착 공정 등을 많이 사용한다. 본 연구에서는 Micro-imprinting 공정과 DFR photo lithography 공정을 통해 음각의 미세한 pattern을 형성한 후 sputtering과 printing을 이용하여 pattern의 filling을 통해 metal line을 구현하는 것을 목표로 하였다. Pattern을 형성한 후 RIE 공정을 통해 기판 표면의 친수성 처리를 하고, SAM 공정을 통해 코팅 막의 소수성 처리를 하였다. Sputtering과 전면 프린팅 및 건조 후 strip 공정을 통해 metal line을 형성하고, 이에 대한 표면 특성과 전기적 특성을 분석하였다.

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Electric Circuit Fabrication Technology using Conductive Ink and Direct Printing

  • Jeong, Jae-U;Kim, Yong-Sik;Yun, Gwan-Su
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.12.1-12.1
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    • 2009
  • For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.

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