• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.509-512
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• 2004

This paper proposed a new solid State Relay(SSR) structure that can replace the conventional SSR as a power IC. The photodiode arrays, the main part of this structure, were designed and integrated in the same power It chip with the output parts, LDMOSFET and BJT, on a SOI substrate. The fabrication of this input part shared the same output LDMOSFET fabrication processs, except the additional deposition of Silicon nitride($Si_3N_4$) for the photo-detection part. According to LED illumination intensites and photo detecting areas, we could obtain voltage of 0.49V ${\~}$0.52V and current of 5.5uA ${\~}$ 108uA respectively from the fabricated unit photodiode. The maximum value of the voltage and the current we could obtain from the photodiode array were 3.58V and 24.4uA respectively, and the voltage was enough to operate the output LDMOSFET

• Journal of Power Electronics
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• v.10 no.1
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• pp.79-84
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• 2010

This paper presents a grid connected photo-voltaic system using a quasi-Z-source inverter (QZSI) for power stage reduction. The power stage can be reduced because of an additional shoot-through stage which is a characteristic of QZSI. Therefore, by utilizing a QZSI the system's efficiency can be increased. In this paper, for applying a QZSI to a PV system, control methods such as maximum power point tracking (MPPT), point of common coupling (PCC) current control and PWM are studied and verified through simulation and experiment. In order to explain the above controllers, the characteristics of a QZSI are first analyzed. Then the MPPT control technique with a modified P&O method, the PCC current control for the regulation of the dc-link capacitor voltage and the PWM methods for the proposed system are explained. The feasibility of the proposed algorithm is verified through simulation and experiment with a 3kW system.

• Corrosion Science and Technology
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• v.2 no.1
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• pp.7-11
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• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.387-395
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• 2008

An optic module system is developed adopting multiple colorimetry units for the measurement of multi-pad urinalysis dipsticks. Multiple photometry system instead of moving mechanisms has the advantages of system reliability and simplicity as well as economic aspects due to the recent development of economic color light emitting diodes and stable photo sensors. An integration amplifier with programmable integration time, a current source circuit with selectable and stable current settings were connected through analog multiplexers to thirty light emitting diodes for illumination and ten photo transistors for reading each strip pad. All the circuits are controlled by a microprocessor through a simple set of serial communication commands. The detect ability is eighteen times better than the minimum color difference of the test grading which is 0.013 in urobilinogen in the color space defined in this paper.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Fire Science and Engineering
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• v.24 no.1
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• pp.46-53
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• 2010

This is a case report of a photo-electric single station alarm for residential fire prevention. The detector was developed for the certification in Japanese market which is more than 100 times bigger than Korean market. A comparison and review for test standard owned by KFI (Korea Institute of Fire Industry & Technology) and JFEII (Japan Fire Equipment Inspection Institute) respectively is also conducted. The detector alarms with a buzzer and an indicating LED. Operating period and time in alarm, low battery and fire situation is stated. The electronics circuit part to reduce its current and the detector's characteristics are described. It is explained that the measured current and experimental result of the battery discharge can meet the 10 years operation.

• Archives of Plastic Surgery
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• v.50 no.4
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• pp.443-444
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• 2023

Point-of-care photography and photo sharing optimize patient outcomes and facilitate remote consultation imperative for resident surgeons. This literature review and external pilot survey study highlight the risks associated with current practices concerning patient privacy and biometric security. In a survey of 30 plastic surgeon residents and attendings, we found that the majority took photos of patients with their iPhones and shared them with colleagues via Apple iMessage. These findings corroborate previous reports and highlight a lack of physician user acceptance of secure photo-sharing platforms. Finally, we frame a successful example from the literature in the context of a postulated framework for institutional change. Prioritizing the privacy and safety of patients requires a strategic approach that preserves the ease and frequency of use of current practices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.156-159
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• 1996

Detection of displacement current across spreading organic Azodyes was investigated using a displacement current measuring technique. It was found that displacement current was generated only when dynamical motion of organic monolayers was initiated on the water surface by photo-isomerization and application of surface pressure. Displacement current was generated only in the range before the initial rise of Surface pressures for azo dyes(8A5H) we are using the Langmuir-Blodgett(LB) films deposition apparatus. We are obtain displacement current by pressure and light

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.103-108
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• 1997

Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.322-329
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.