• Title/Summary/Keyword: photo current

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Development of Women's Cycle Wear Top with Improved Function (운동기능성 향상을 위한 여성용 사이클웨어 상의 개발)

  • Kwon, Chae-Ryung;Kim, Dong-Eun
    • Fashion & Textile Research Journal
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    • v.21 no.1
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    • pp.75-87
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    • 2019
  • The purpose of the study was to suggest a cycle wear top jersey improved in mobility. The study developed a new cycle wear with improvement in dissatisfaction factors by planning design, pattern and the functionality of fabric. Considering the amount of sweat and the necessities of compression part, the basic material, the additional compression material, and the mesh material were arranged differently according to areas. The assessment of the developed cycle wear was composed of wearing comfort evaluation by female cyclist, photo analysis and garment pressure evaluation. The developed cycle wear was evaluated and compared with the current cycle wear. As a result of wearing comfort evaluation, the developed cycle wear was evaluated as better than the existing ones in all part, particularly in the areas of reflection tape and materials, partial pressure, pocket size, and prevention of loss. Photo analysis was in agreement with the appearance evaluation of the participants. As a result of garment pressure evaluation, the front neck part was more comfortable and the upper arm, abdomen, and waist area showed higher pressure, so it partially supported the body. This study has significant meaning for developing a new cycle wear top, protecting the body and improving the exercise effect.

Sensing Characteristics of Uncoated Double Cladding Long-period Fiber Grating Based on Mode Transition and Dual-peak Resonance

  • Zhou, Yuan;Gu, Zheng Tian;Ling, Qiang
    • Current Optics and Photonics
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    • v.5 no.3
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    • pp.243-249
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    • 2021
  • In this paper, the sensing characteristics of a double cladding fiber (DCF) long-period fiber grating (LPFG) to the surrounding refractive index (SRI) are studied. The outer cladding of the DCF plays the role of the overlay, thus, the mode transition (MT) phenomenon of DCF can be induced by etching the outer cladding radius instead of coating overlays. The response characteristics of the effective refractive index (ERI) of the cladding mode to the outer cladding radius are analyzed. It is found that in the MT range, the change rate of ERIs of cladding modes is relatively larger than that for other ranges. Further, based on the features of the mode transition region (MTR), the phase-matching curve of the 11th cladding mode is investigated, and the response of the DCF-LPFG to the SRI is characterized by the change of wavelength intervals between the dual peaks under different outer cladding radii. The numerical simulation results show that the SRI sensitivity is greatly improved, which is available to 3484.0 nm/RIU with the fitting degree 0.998 in the SRI range of 1.33-1.37. The proposed DCF-LPFG can provide new theoretical support for designing the DCF-LPFG refractive index sensor with excellent performances of sensitivity, linearity and structure.

A Study on the Thickness Dependence of p-type Organic Layer on the Current of Small Molecule-based Organic Photodiode (저분자 유기 광다이오드 소자의 p형 유기물 두께에 따른 전류 특성에 관한 연구)

  • Young Woo Kim;Dong Woon Lee;Yongmin Jeon;Eou-sik Cho;Sang Jik Kwon
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.3
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    • pp.101-105
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    • 2023
  • Organic photo Diodes (OPDi) give multiple advantages in the growing interest of the flexible optoelectronic devices. Organic semiconductors are freeform as they can deposit on any substrate, so it could be flexible. But the inorganic material photodiodes (PDs) are usually fabricated on silicon wafers which are solid. So, normally PDs are inflexible. By those reasons, we decided to make the vacuum deposited small molecule OPDi. We have investigated the OPDi's J-V characteristic by changing the thickness of p-type layer of OPDi. This device consists of indium-tin-oxide (ITO) / 2,3:6,7-dibenzanthracene (pentacene) / buckminsterfullerene (C60) / aluminum (Al). Its J-V characteristics were measured in the probe station(4156C) that can give dark condition while measuring. And for the luminance characteristics, the photocurrent was measured with the bright halogen lamp and a probe station.

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A Study on the Design and Fabrication of GHz Magnetic Thin Film Inductor Utilizing Co90Fe10/SiO2 Multilayer (Co90Fe10/SiO2 Multilayer를 이용한 GHz 자성박막 인덕터 설계 및 제작에 관한 연구)

  • 공기준;윤의중;진현준;박노경;문대철
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.5B
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    • pp.985-991
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    • 2000
  • In this paper, the optimum structure of 2GHz magnetic thin film planar inductor were designed and fabricated to reduce the inductor area and to maximize the inductance L and quality factor Q of the inductor. The optimum design was performed utilizing Co90Fe10 layer multilayered with SiO2 layers to avoid the eddy-current skin effect and considering new lumped element model. New magnetic thin film inductors operating at 2GHz were fabricated on a Si substrate utilizing photo-lithography and lift-off techniques. The frequency characteristics of L, Q, and impedance in more than fifty identical inductors were measured using an RF Impedance Analyzer(HP4291B with HP16193A test fixture). The self-resonant frequencies(SRF) of the inductors were measured by a Vector Network Analyzer(HP8510). The developed inductors have SRF of 1.8 to 2.3GHz, L of 47 to 68nH, and Q of 70 to 80 near 1GHz. Finally, high frequency, high performance, planar micro-inductor(area=30.8 x 30.8il$^2$) with maximized L and Q were fabricated succefully.

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Dy co-doping effect on photo-induced current properties of Eu-doped SrAl2O4 phosphor (Eu 도핑 SrAl2O4 형광체의 광 여기 전류 특성에 대한 Dy 코-도핑 효과)

  • Kim, Sei-Ki
    • Journal of Sensor Science and Technology
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    • v.18 no.1
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    • pp.48-53
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    • 2009
  • $Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

Deep Levels in Semi-Insulating GaAs : Cr and Undoped GaAs (SI GaAs : Cr과 Undoped GaAs의 깊은 준위)

  • Rhee, Jin-Koo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1294-1303
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    • 1988
  • Electron and hole traps in semi-insulating GaAs with activation energies ({\Delta}E_r) ranging from 0.16 $\pm$ 0.01 to 0.98 $\pm$ 0.01 eV, have been detected and characterized by photo-induced current transient measurements. SI undoped GaAs has fewer deep levels than SI GaAs: Cr. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, and "0" levels in semi-insulating GaAs were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures.

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A Design and Voltage Control of a High Efficiency Generator with PM Exciter (고효율 영구자석 여자기 구조의 발전기 설계와 전압제어)

  • Jo, YeongJun;Lee, Dong-Hee
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.11
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    • pp.1827-1834
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    • 2016
  • This paper presents a high efficient generator with PM(Permanent Magnet) exciter. The proposed PM exciter for the generator can produce a linear output voltage according to the engine speed. This output voltage is directly used to control the field current of the generator to adjust the generator output voltage. In the proposed generator system, since the field winding current can be supplied by the PM exciter, the generator can self-start without any battery or an external power supply due to the low residential flux. Furthermore, the operating efficiency of the generator is higher than a conventional winding exciter. The main problem of the proposed generator system, the field winding current controller has to be embedded inside the generator, and it rotates according to the generator shaft. In this paper, the proper embedded current controller is designed for the proposed generator system. Due to the embedded controller cannot be connected to the outside the generator controller, the measured instantaneous output voltage of the generator is transferred by the photo isolated communication using shaft aligned infrared transmitter and receiver to keep the constant generator output voltage. In this paper, 10kW, 380V engine generator with PM exciter and the embedded DAVR(Digital Automatic Voltage Regulator) are described. The proposed high efficiency generator is simulated and tested to verify the effectiveness.

A study on the deep levels in boron ion implanted semi-insulating GaAs by PICTS (PICTS방법에 의한 Boron이온을 주입시킨 반절연성 GaAs의 깊은준위에 관한 연구)

  • 최현태;김인수;이철욱;손정식;김영일;배인호
    • Electrical & Electronic Materials
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    • v.8 no.4
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    • pp.426-433
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    • 1995
  • Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10$\^$12/ and 10$\^$13/ions/cm$\^$2/. In ion implanted samples, the peaks related arsenic vacancy(V$\_$As/) were decreased but complex lattice defect was increased with annealing temperature. U band was observed at ion implanted(10$\^$13/ ions/cm$\^$2/) and thermally treated(550.deg. C) sample. More negative peak was detected after annealing at temperature between 600 and 700.deg. C. The measurement of dark current showed that the formation of B$\_$GA/-V$\_$As/, complex defect and complex lattice defect by ion implantation were a reasonable explanation for the decrease in dark current.

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Study on improvement of cell current instability (Oxy-nitride막질 증착조건에 따른 Cell Current Instability 개선 연구)

  • Jeong, Young-Jin;Kim, Jin-Woo;Park, Young-Hea;Kim, Dae-Gn;Jeong, Tae-Jin;Roh, Yong-Han
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.119-120
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    • 2007
  • 반도체 공정에서 사용되는 ILD막질 중 oxy-nitrde(SiON) film은 contact etch stopper, photo공정을 위한 ARL(anti-reflection lay떠 그리고, 후속공정의 plasma damage에 대한 blocking layer로서의 역할을 담당하며 많은 공정에 널리 사용되고 있다. 그러나 막질 자체의 불완전성 (trap site, dangling bond)에 의해 cell current instability(CCI) 특성을 악화 시킬 수 있어 이에 대한 원인규명 및 대책이 요구되었다. 본 연구는 미국 S사(社) super flash memory에서 oxy-nitride 막질 증착 시의 gas flow량에 따른 CCI 특성변화를 연구하고 최적의 공정조건을 제시하고자 한다.

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The application of photographs resources for constructive social studies (구성주의적 사회과 교육을 위한 사진자료 활용방안)

  • Lee, Ki-Bok;Hwang, Hong-Seop
    • Journal of the Korean association of regional geographers
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    • v.6 no.3
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    • pp.117-138
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    • 2000
  • This study is, from the view point of constructive social studies which is the foundation of the 7th curriculum, to explore whether there is any viable program and to investigate it by which students, using photo resources in social studies, can organize their knowledge in the way of self-directed thinking. The main results are as follows: If it is a principle of knowledge construction process of constructive social studies that individual construction (cognitive construction) develops into communal construction(social construction) and yet communal construction develops itself, interacting with individual construction, it will be meet the objectives of social studies. In social studies, photos are a powerful communication tool. communicating with photos enables to invoke not only the visual aspects but also invisible aspects of social phenomena from photos. It, therefore, can help develop thinking power through inquiry learning, which is one of the emphasis of the 7th curriculum. Having analyzed photo resources appeared on the regional textbooks in elementary social studies, they have been appeared that even though the importance and amount of space photo resources occupy per page is big with regard to total resources, most of the photos failed to lad to self-directed thinking but just assistant material in stead. Besides, there appeared some problems with the title, variety, size, position, tone of color, visibility of the photos, and further with the combination of the photos. Developing of photo resources for constructive social studies is to overcome some problems inherent in current text books and to reflect the theoretical background of the 7th curriculum. To develop the sort of photo that can realize the point just mentioned, it would be highly preferable to provide photo database to facilitate study with homepage through web-based interaction. To take advantage of constructive photo resources, the instruction is strategized in four stages, intuition, conflict, accommodation, and equilibration stage. With the advancement of the era of image culture, curriculum developers are required to develop dynamic, multidimensional digital photos rather than static photos when develop text books.

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