• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.15-16
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• 2007

The high efficiency and low cost solar cells in order to it applied a dopant pastes diffusion process. The dopant pastes diffusion process which it uses is easily applied in screen-printing solar cells output line. in this paper, it used the Ferro 99-038 phosphorus diffusion pastes source and it analyzed a sheet resistance and a uniformity degree. And it knew the quality of the sheet resistance which it follows in temperature and time condition. The temperature variable it let and it fixed the time in 7 minutes. It will be able to measure the sheet resistance of $40({\Omega}/sq),\;30({\Omega}/sq),\; 20({\Omega}/sq)$. also average uniformity of the sheet resistance was below 5%.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.68-69
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• 2007

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.2 no.2
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• pp.169-179
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• 1998

This paper was performed to estimate interrelations between humus level of sediments and nutrient release from sediments in Dae-cheong reservoir. For investigations, sediments were sampled in June and October, in 1997 at fish farms, embayment, and the main stream of Dae-cheong reservoir. Items for investigation are as follows; water content, weight loss on ignition(IG), porosities of sediments, contents of element such as hydrogen, nitrogen, carbon, and nutrient release rates. Water contents and porosities were measured to conjecture the physical trait and grain size trait. Weight loss on ignition was measured to determine the contents of organic substance. For determination of the humus level of sediments, carbon and nitrogen contents were measured by elemental analyzer. As a result of elemental analysis, C/N ratio was determined in the range of $3.0\~13.1$. From the elemental analysis, humus level of Dae-cheong reservoir sediment was estimated from mesohumic state to oligotrophic state. For the determination of nutrient release rate, $PO_4-P$ and $NH_4-N$ concentrations of interstitial water and overlying water were measured. By using the concentration difference between interstitial water and overlying water and using the Fick's diffusion law, the release rates of phosphorus and nitrogen from the sediment samples were calculated. Release rates of nutrients which directly influence to the water quality were $0.05\~8.63mgP/m^2day$ and $4.99\~36.56mgP/m^2day$. It was found that release rate was measured higher in the 1st sampling period than in the 2nd sampling period. For the determination of phosphorus content in sediment, TPs were measured in 807\~1542{\mu}g/g$ in the 1st samling period and $677\~5238{\mu}g/g$ in the End samling period. Phosphorus release rate and phosphorus content were not interrelated each other.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.424-430
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• 1996

The present processing sequence for solar cells is very elaborate and ads to the cost of the fabricated cells. This processing cost, which accounts for about 30% of the total cost, can be reduced if the many high temperature sequences can be reduced without significantly reducing the cells energy conversion efficiency. By using the spin-on glasses (SOG) in conjunction with the conventional tube furnace (CTF) or rapid thermal annealer (RTA), the many high temperature process can be reduced to only one. In order to achieve efficiencies similar to the standard high temperature sequences using the solid or liquid sources, some basic characterization of the groove diffusion is necessary to ascertain the its suitability. This paper describes the work done in diffusing the buried contact grooves using the phosphorus SOG.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.61-64
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• 2011

In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.424-428
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• 1987

A $2{\mu}m$ CMOS P-well double metal technology has been developed. Phosphorus deep implantation and drive-in diffusion steps were utilized to prevent the low voltage bulk punch through in the short channel, 1.6[${\mu}m$] Leff, PMOS device. Double metal process with the rules of 5[${\mu}m$] 1st metal pitch and 7[${\mu}m$] 2nd metal pitch was successfully implemented by using VLTO, low temperature oxide, as on intermetal dielectric.

• Analytical Science and Technology
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• v.35 no.2
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• pp.41-52
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• 2022

The leaching of nitrate from soil increases the concentration of elements, such as nitrogen, phosphorus, and potassium, in water, causing eutrophication. In this study, the feasibility of using clinoptilolite as an ion-exchange material to reduce nitrate leaching in soil was investigated. Soil samples were collected from three soil depths (0 - 30, 30 - 90, and 90 - 120 cm), and their sorption capacity was determined using batch experiments. The effects of contact time, initial concentration, adsorbent dosage, pH, and temperature on the removal of NO₃^- were investigated. The results showed that an initial concentration of 25 mg L^-1, a contact time of 120 min, an adsorbent dosage of 5.0 g/100 mL, a pH of 3, and a temperature of 30 ℃ are favorable conditions. The kinetic results corresponded well with a pseudo-second-order rate equation. Intra-particle diffusion also played a significant role in the initial stage of the adsorption process. Thermodynamic studies revealed that the adsorption process is spontaneous, random, and endothermic. The results suggest that a modification of clinoptilolite effectively reduces the leaching of nitrate in soil.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.