• 제목/요약/키워드: phosphor

검색결과 1,149건 처리시간 0.028초

ACPEL용 ZnS:Cu 청색 형광체의 인위적 결함 형성에 따른 결정 상 변화 및 EL 특성 (Characteristics on EL Properties and Phase Transformation Caused by Artificial Defects on the ZnS:Cu Blue Phosphor for ACPEL)

  • 이명진;전애경;이지영;윤기현
    • 한국세라믹학회지
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    • 제41권5호
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    • pp.406-409
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    • 2004
  • 교류 구동 분산형 EL(ACPEL)에 사용되는 ZnS:Cu 청색 형광체를 고상 반응법으로 제조하였다. 1차 소성 후 인위적 결함을 형광체 표면에 도입함으로서 2차 소성 중에 의해 일어나는 ZnS의 상전이 및 EL 발광 휘도에 미치는 영향을 연구하였다. 즉 1차 소성된 형광체를 ball-mill 공정에서 인위적으로 표면에 defect를 형성시켜 ZnS의 저온상인 cubic으로의 전이가 용이하게 하여 EL구동하에서 발광 휘도를 증가시켰다. Ball-mill의 공정 변수로는 milling 시간과 rpm 등을 고려하여 각 조건에 따른 효과를 고찰하였으며, 발광 spectrum을 측정한 결과, 최적 조건에서 인위적인 결함을 형성하지 않은 형광체 보다 발광 휘도가 약 30% 이상 증가하였다. 또한 각기 다른 ball-mill 조건으로 합성된 형광체의 결정상을 분석하고 비교하였으며 상전이 특성에 따른 발광 휘도 변화를 고찰하였다.

Separation and Recovery of Rare Earth Elements from Phosphor Sludge of Waste Fluorescent Lamp by Pneumatic Classification and Sulfuric Acidic Leaching

  • Takahashi, Touru;Takano, Aketomi;Saitoh, Takayuki;Nagano, Nobuhiro;Hirai, Shinji;Shimakage, Kazuyoshi
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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    • pp.421-426
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    • 2001
  • The pneumatic classification and acidic leaching behaviors of phosphor sludge have been examined to establish the recycling system of rare earth components contained in waste fluorescent lamp. At first, separation characteristic of rare earth components and calcium phosphate in phosphor sludge was investigated by pneumatic classification. After pneumatic classification of phosphor sludge, rare earth components were leached in various acidic solutions and sodium hydroxide solution. For recovery of soluble component in leaching solution, rare earth components were separated as hydroxide and oxalate precipitations. The experimental results obtained are summarized as follows: (1) In classification process, rare earth components in phosphor sludge were concentrated to 29.3% from 13.3%, and its yield was 32.9%. (2) In leaching process, sulfuric acid solution was more effective one as a leaching solvent of rare earth component than other solutions. Y and Eu components in phosphor sludge were dissolved in sulfuric acid solution of 1.5 k㏖/㎥, and other rare earth components were rarely dissolved in leaching solution. Leaching degrees of Y and Eu were respectively 92% and 98% in the following optimum leaching conditions; sulfuric acid concentration is 1.5 k㏖/㎥ , leaching temperature 343 K, leaching time 3.6 ks and pulp concentration 30 kg/㎥. (3) Y and Eu components of phosphor sludge contained in waste fluorescent lamp were, effectively recovered by three processes of pneumatic classification, sulfuric acid leaching and oxalate precipitation methods. Their recovery was finally about 65 %, and its purity was 98.2%.

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기판온도 및 Annealing에 따른 ZnGa2O4 형광체 박막의 특성 (Characteristics of ZnGa2O4 Phosphor Thin Film with Temperature of Substrate and Annealing)

  • 김용천;홍범주;권상직;이달호;김경환;박용서;최형욱
    • 한국전기전자재료학회논문지
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    • 제18권2호
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    • pp.187-191
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    • 2005
  • A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

Synthesis and Luminescence Properties of Sr/SmSi5N8:Eu2+ Phosphor for White Light-Emitting-Diode

  • Luong, Van Duong;Lee, Hong-Ro
    • 한국표면공학회지
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    • 제47권4호
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    • pp.192-197
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    • 2014
  • Red-emitting nitride phosphors recently attracted considerable attention because of their high thermal stability and high color rendering index properties. For excellent phosphor of white light-emitting-diode, ternary nitride phosphor of $Sr/SmSi_5N_8:Eu^{2+}$ with different $Eu^{2+}$ ion concentration were synthesized by solid state reaction method. In this work, red-emitting nitride $Sr/SmSi_5N_8:Eu^{2+}$ phosphor was successfully synthesized by using multi-step high frequency induction heat treatment. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Sr/SmSi_5N_8:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Sr/SmSi_5N_8:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 300 - 550 nm, namely from UV to visible area with distinct enhanced emission peaks. With an increase of $Eu^{2+}$ ion concentration, the peak position of emission in spectra was red-shifted from 613 to 671 nm. After via multi-step heat treatment, prepared phosphor showed excellent luminescence properties, such as high emission intensity and low thermal quenching, better than commercial phosphor of $Y_3Al_5O_{12}:Ce^{3+}$. Using $Eu_2O_3$ as a raw material for $Eu^{2+}$ dopant with nitrogen gas flowing instead of using commercial EuN chemical for $Sr/SmSi_5N_8:Eu^{2+}$ synthesis is one of characteristic of this work.

재생 형광체로 제조한 백색 LED의 손전등 시스템에의 적용 (Application of a Flashlight system for White LEDs Manufactured using a Reproduction Phosphor)

  • 류장렬
    • 한국산학기술학회논문지
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    • 제15권8호
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    • pp.5195-5200
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    • 2014
  • 최근 백색 LED는 각종 조명등의 응용 시스템에 크게 사용되고 있다. 백색 LED 칩을 만들기 위하여 실리콘과 형광체를 배합하여 청색 LED 칩 위에 도포하는 공정이 필요한데, 이때 배합의 오류, 실리콘의 상온 노출 시간의 경과, 청색 칩 특성의 변화 등의 원인으로 버려지는 형광체가 있어 이것이 원가 절감에 악영향을 미치고 있다. 본 연구에서는 버려지는 형광체의 재생공정을 통하여 제조된 LED와 정상형광체의 LED의 특성을 비교하고, 이들을 이용하여 실 응용 제품인 LED 손전등에 적용하여 그 특성의 동일함을 얻었다. 재생과 정상 형광체의 특성에서 광량 저하량 3.2[Cd]와 3.6[Cd], 색감 저하량 57[K]와 58[K]를 보였고, LED의 실제 응용제품에 적용한 결과 최대 백색파장 444.3[nm]와 449.8[nm]를 나타내어 재생형광체의 LED가 정상의 것과 동일한 특성을 보여 원가절감에 큰 기여를 할 것으로 나타났다.

백색 LED 보정 공정 적용을 위한 고점도 형광체 미세 정량토출 공정 (Fine Dispensing Process of High Viscosity Phosphor for Repairing Application of White LED)

  • 양봉수;양영진;김형찬;고정범;조경호;도양회
    • 한국생산제조학회지
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    • 제25권2호
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    • pp.124-131
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    • 2016
  • Several research works for finding and optimizing the methods of dispensing high viscosity phosphor used in the fabrication of white LED's are currently in progress. High viscosity phosphor dispensing with a high accuracy is crucial because the dispensing rate and uniformity directly affect parameters such as the CIE chromaticity diagram, color temperature and luminous flux of white LED's. This study presents a novel method of dispensing high viscosity phosphor using electrohydrodynamic printing. The dispensing rate was optimized less than 0.01 mg phosphor using experiments and optimizing the process parameters including the standoff distance from the nozzle to the substrate, ink supply pressure, and multi-step pulsed waveform magnitude ratio. The dispensing rate was measured by dispensing 20 dots using drop-on-demand with the optimized parameters, and the experiments were repeated 10 times to maximize the data accuracy. The average dispensing rate that can be reliably used for high viscosity phosphor dispensing was 0.0052 mg.

이격 형광체 구조가 적용된 백색 LED 광원의 온도변화에 따른 발광 특성 분석 (Effect of Temperature on the Luminous Properties of Remote-Phosphor White Light-Emitting Diodes)

  • 최민혁;이헌재;고재현
    • 한국광학회지
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    • 제25권5호
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    • pp.254-261
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    • 2014
  • 본 논문에서는 일반적인 코팅형 형광체와 이격 형광체 등 두 가지의 형광체 구조가 적용된 백색 LED를 제작한 후 온도변화에 따라 각 백색 LED의 발광 특성이 어떻게 변하는지 측정, 비교하였다. 상온에서 80oC 사이의 구간에서 측정된 두 백색 LED의 발광 스펙트럼을 분석하기 위해 Gaussian Lorentz-cross product 함수와 Asymmectic double sigmoidal 함수를 각각 청색 피크와 황색 피크의 곡선맞춤에 활용하였다. 이로부터 각 피크의 중심파장과 진폭, 반치폭 및 비대칭성을 온도의 함수로 구할 수 있었다. 온도에 따른 휘도와 색좌표를 측정한 결과 이격형광체 구조의 백색 LED의 온도에 따른 휘도저하율 및 색좌표 변화율이 훨씬 적었다. 이는 청색 LED 칩과 형광체가 분리됨에 따라 형광체의 온도가 일반 형광체 도포형 LED의 경우에 비해 낮아져서 효율이 상승했고 아울러 형광체에서 발생한 빛의 칩에 의한 흡수가 감소했기 때문인 것으로 해석된다.

Luminescence Properties of Ba3Si6O12N2:Eu2+ Green Phosphor

  • Luong, Van Duong;Doan, Dinh Phuong;Lee, Hong-Ro
    • 한국표면공학회지
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    • 제48권5호
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    • pp.211-217
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    • 2015
  • To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

증착 온도에 따른 La2MoO6:Dy3+,Eu3+ 형광체 박막의 광학 특성 (Effect of Deposition Temperature on the Optical Properties of La2MoO6:Dy3+,Eu3+ Phosphor Thin Films)

  • 조신호
    • 한국전기전자재료학회논문지
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    • 제32권5호
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    • pp.387-392
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    • 2019
  • $Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

Green Light-Emitting Phosphor, Ba2xCaMgSi2O8:Eux

  • Kim, Jeong-Seog;Piao, Ji-Zhe;Choi, Jin-Ho;Cheon, Chae-Il;Park, Joo-Suk
    • 한국세라믹학회지
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    • 제42권3호
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    • pp.145-149
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    • 2005
  • [ $Eu^{2+}$ ]-activated barium magnesium silicate phosphor, $(Ba,Ca)_{3}MgSi_{2}O_{8}:Eu_{x}$, has been known to emit blue-green light. In this study we report the manufacturing processes for producing either pure green or pure blue light-emitting phosphor from the same composition of $Ba_{2-x}Ca_{2}CaMgSi_{2}O_{8}:Eu_{x}$ (0 < x < 1) by controlling heat treatment conditions. Green light emitting phosphor of $Ba_{1.9}CaMgSi_{2}O_{8}:Eu_{0.1}$ can be produced under the sample preparation condition of highly reducing atmosphere of $23\%\;H_2/77\%\;N_2$, while blue or blue-green light emitting phosphor under reducing atmosphere of $5\~20\%\;H_2\;/\;95\~80\%$ N_2. The green light-emitting phosphors are prepared in two steps: firing at $800\~1000^{\circ}C$ for $2\~5$ h in air then at $1100\~1350^{\circ}C$ for 2-5 h under reducing atmo­sphere $23\%$ $H_2/77\%\;N_2$. The excitation spectrum of the green light-emitting phosphor shows a broadband of $300\~410$ nm. The emission spectrum has a maximum intensity at the wavelength of about 501 nm. The CIE value of green light emission is (0.162, 0.528). The pure blue light-emitting phosphors can be produced using the $Ba{2_x}CaMgSi_{2}O_{8}:Eu_{x}$ by introducing additional firing step at $1150\~1300^{\circ}C$ in air before the final reducing treatment. The XRD analysis shows that the green light-emitting phosphor mainly consisted of $Ba_{1.31}Ca_{0.69}SiO_{4}$ (JCPDS $\#$ 36-1449) and other minor phases i.e., $MgSiO_3$ (JCPDS $\#$ 22-0714) and $Ca_{2}BaMgSi_{2}O_{8}$ (JCPDS $\#$ 31-0128). The blue light-emitting phosphor mainly consisted of $Ca_{2}BaMgSi_{2}O_{8}$ phase.