• Journal of Magnetics
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• 제6권3호
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• pp.94-100
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• 2001

Fe-Co-Ni particles with an average size of 45 and 135 nm are characterized in terms of magnetic phase transformation and magnetic properties at room temperature. BCC structure of Fe-Co-Ni spherical particles can be synthesized from Fe-Co-Ni-Al-Cu precursor films by heating at 600-80$0^{\circ}C$ for the phase separation of Fe-Co rich Fe-Co-Ni particles, followed by a post heating at $600^{\circ}C$ for 5 hours. The average size of nanoparticles was directly determined by the thickness of precursor films. Exchange interactive hysteresis was observed for the nano-composite (Fe-Co-Ni)+(Fe-Ni-Al) films resulting from the short exchange interface between ferromagnetic Fe-Co-Ni particles surrounded by almost papramagnetic Ni-Al-Fe matrix. Arraying the isolated Fe-Co-Ni nano-particles in a random arrangement on $Al_2O_3$substrate the particle assembly showed a behavior of dipole interactive ferromagnetic clusters depending on their volume and inter-particle distance.

• Journal of Magnetics
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• 제7권2호
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• pp.51-54
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• 2002

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.

• 한국세라믹학회지
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• 제27권5호
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• pp.613-618
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• 1990

The pure and 6mol% MgO-doped ZrO2 powders were prepared by hot petroleum drying method. The power characterization of homogeneous fine powder was indentified by the method of thermal analysis, BET and electron microscope. The transformation, content of t-ZrO2, crystallite size and apparent strain were measured by X-ray diffraction technique. The prepared powders were transformed in order of amorphouslongrightarrowmetastable cubic ZrO2longrightarrowmetastable tetragonal ZrO2longrightarrowstable monoclinic ZrO2 by a adequate heat treatment. The stabilization of metastable phase can be discussed in terms of energetial concept ; the difference of surface energy and internal strain in particle.

• 한국태양에너지학회 논문집
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• 제33권1호
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• pp.73-78
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• 2013

Hexadecane and exfoliated graphite nanoplate (xGnP)composite was prepared as a shape-stabilized phase change material (SSPCM) in a vacuum to develope thermal energy storage. The Hexadecane as an organic phase change material (PCM) is very stable against phase separation of PCM and has a melting point at $18^{\circ}C$ that is under the thermally comfortable temperature range in buildings. The xGnP is a porous carbon nanotube material with high thermal conductivity. Scanning electron microscope (SEM) and Fourier transformation infrared spectrophotometer (FT-IR)were used to confirm the chemical and physical stability of Hexadecane/xGnP SSPCM. In addition, thermal properties were determined by Deferential scanning calorimeter(DSC) and Thermogravimetric analysis (TGA). The specific heat of Hexadecane/xGnPSSPCM was $10.0J/g{\cdot}K$ at $21.8^{\circ}C$. The melting temperature range of melting and freezing were found to be $16-25^{\circ}C$ and $17-12^{\circ}C$. At this time, the laten heats of melting and freezing were 96.4J/g and 94.8J/g. The Hexadecane was impregnated into xGnP as much about 48.8% of Hexadecane/xGnP SSPCM's mass fraction.

• 한국재료학회지
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• 제9권12호
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• pp.1222-1228
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• 1999

Zr의 ${\beta}{\to}{\alpha}$ 상변태 특성에 미치는 Sn과 Nb 첨가의 영향을 광학현미경과 전자현미경을 이용하여 연구하였다. 공냉한 Zr의 미세구조는 첨가된 합금원소의 종류에 관계없이 모두 미세한 ${\alpha}$-lath 폭이 일정하였으나, Nb의 첨가량이 증가할수록 ${\alpha}$-lath 폭이 감소하였으며, 이는 Nb 첨가에 따른 ${\beta}{\to}{\alpha}$+${\beta}$변태온도의 저하에 기인한 것으로 보인다. Martensitic 변태 특성을 나타낸 수냉의 경우에는 순수한 Zr과 Sn을 첨가한 경우에는 slipped martensite의 특성을 나타낸 반면에, Nb을 첨가한 경우에는 급격한 Ms 온도의 감소에 따라 twinned martensite의 특성을 나타내었다.

• 전기학회논문지
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• 제56권9호
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• pp.1602-1608
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• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 열처리공학회지
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• 제5권3호
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• pp.179-185
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• 1992

The shape memory effect results from the martensite transfomation of each individual grain. Thus it is necessary to study the texture and its variation. In this study the change of texture during thermal cycling and it's effect on shape memory ability are investigated. The major component of the rolling texture in the parent phase is identified (001) [110], and minor components are (112) [110], (111) [112], {hkl}<100> fiber texture is developed at $45^{\circ}$ from rolling direction. In the case of martensite phase, it is estimated that the major component is (011) [100] and the minor components are (105) [501], (010) [101] and (100) [001]. According to thermal cycling. severity of texture, especially (001) [110] component in parent phase and (011) [100] component in martensite phase are increased. The shape memory ability is increased with increase of thermal cycles and also increased as the direction of specimen approach to $45^{\circ}$ from rolling direction. After first thermal cycling the temperature of transformation can be define clearly and Ms and As are raised by thermal cycling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.73-76
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• 2003

Phase transformation of Bi-2223 tape during the final heat treatment has been investigated through the various duration time of heat treatment in a specially designed 3-step heat treatment. It was found that the phase assemblage in the sintering was determined by the sintering time and temperature. In this study, sintering time was changed to optimize the Bi-2223 phase assemblage, and acquire high critical current density. High critical current samples with Ic = 85 A and Je = 8.9 kA/$cm^2$ have been measured at 77K and self-field for 55-filament tapes sintered by optimum condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• 한국결정학회지
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• 제6권1호
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• pp.49-55
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• 1995

HVPE(Halide Vapour Phase Epitaxy) 법에 의하여 육방정계 질화갈륨(GaN) 단결정막의 (0001)면에 섬모양으로 배향된 입방정계 β-GaN상과 육방정계 α-GaN상 사이의 상호 배향은 [110](111) β-GaN//[1120](001) α-GaN 관계를 갖는 것으로 관찰되었다. 삼각섬 모양을 β-GaN는 막표면에 평행인 (111)면에 대한 쌍정위치를 점하고 있었다. 광발광(PL) 및 국소부위 음극선 발광(CL)을 측정하여 β-GaN의 금제대폭값은 실온에서 3.18±0.30eV로 얻어졌다.