• 제목/요약/키워드: phase shifts

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충격반응수열을 이용한 최대길이를 갖는 셀룰라 오토마타의 위상이동차 계산 알고리즘 (Computation Algorithm for the Phase Shifts of Maximum Length Cellular Automata by Using Impulse Response Sequence)

  • 최언숙;김진경;황윤희;김한두;조성진
    • 한국정보보호학회:학술대회논문집
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    • 한국정보보호학회 2006년도 하계학술대회
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    • pp.75-78
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    • 2006
  • GF(2)위에서 최대길이를 갖는 n-셀 90/150 셀룰라 오토마타의 각 셀은 길이가 $2^n-1$인 수열을 생성한다. 이러한 셀룰라 오토마타의 임의의 셀에 대한 출력수열은 다른 셀에 대한 출력수열의 위치를 이동함으로써 얻을 수 있다. 본 논문에서는 주어진 셀룰라 오토마타의 상태전이행렬의 특성다항식에 의한 동차 선형점화식을 만족하는 충격반응수열을 이용하여 셀들의 위상이동차를 계산하는 알고리즘을 제안한다.

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Mixed-state Hall angle Hg-based superconducting thin films

  • Kim, Wan-Seon;Lee, Sung-Ik;Kang, Won-Nam
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.41-44
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    • 2000
  • The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T$^{\ast}$) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T$^{\ast}$ shifts to low temperature with increasing fields. Interestingly, however, we found that T$^{\ast}$ is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H - T$^{\ast}$ line will be discussed.

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Mixed-state Hall Angle in Hg-based Superconducting Thin Films

  • Kang, Won-Nam;Kim, Wan-Seon;Lee, Sung-Ik
    • Progress in Superconductivity
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    • 제2권1호
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    • pp.39-42
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    • 2000
  • The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T*) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T* shifts to low temperature with increasing fields. Interestingly, however, we found that T* is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H-T* line will be discussed.

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유체가 채워진 실린더형 공동에 의한 탄성파 공명 산란 해석 (Elastic Wave Resonance Scattering from a Fluid-filled Cylindrical Cavity)

  • Huinam Rhee;Park, Youngjin
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 춘계학술대회논문집
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    • pp.208-213
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    • 2002
  • A new method is presented for the isolation of resonances from scattered waves for elastic wave resonance scattering problems. The resonance scattering function consisting purely of resonance information is defined. Elastic wave resonance scattering from a water-filled cylindrical cavity imbedded in an aluminum matrix is numerically analyzed. The classical resonance scattering theory and the new method compute different magnitudes and phases of the resonances from each partial wave, and therefore. their total resonance spectra are quite different. The exact $\pi$ - radians phase shifts through the resonance and anti-resonance frequencies show that the proposed method properly extracts the vibrational resonance information of the scatterer compared to resonance scattering theory.

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4진 낮은 상관 구역 수열군의 새로운 생성법 (A New Construction Method of Quaternary LCZ Sequence Set)

  • 장지웅;김영식;임대운
    • 한국통신학회논문지
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    • 제34권2C호
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    • pp.153-157
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    • 2009
  • 본 논문에서는 짝수 N에 대하여 매개 변수가 (N,M,L,$\varepsilon$)인 이진 낮은 상관 구역 수열군(LCZ sequence)를 이용하여 동일한 매개 변수를 갖는 4진 낮은 상관 구역 수열군을 생성하는 방법을 제시한다. 새로 제안된 생성법은 이진 낮은 상관 구역 수열과 위상을 변화시킨 수열에 Krone와 Sarwate의 논문에 나온 역 gray 사상을 적용하였다. 본 논문에서 제시하는 생성법은 주기 N이 짝수인 모든 이진 낮은 상관 구역 수열군에 적용하는 것이 가능하다.

하동 카올린으로부터 제조한 $\beta$-Sialon 분체의 표면특성 (Surface Characterization of $\beta$-Sialon Powder Prepared from Hadong Kaolin)

  • 임헌진;이홍림
    • 한국세라믹학회지
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    • 제28권12호
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    • pp.961-968
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    • 1991
  • The nature and composition of the surfaces of silicon nitride and β-Sialon powders were investigated using high voltage and high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). β-Sialon powder was produced from Hadong kaolin by the carbothermic reduction and simultaneous nitridation. XPS showed that Al was contained in the surface of β-Sialon powder besides Si, N and O components, which is different from that of silicon nitride. It was supposed that Al in the surface of β-Sialon was bonded with oxygen from the oxygen-nitrogen ratio and the measurement of Al 2p binding energies. After both silicon nitride and β-Sialon powders were oxidized at 800℃ for 24h in air, nitrogen didn't exist in the surfaces and the depth of the oxide layer increased. The measurement of Si 2p binding energies showed that the chemical shifts occurred from Si3N2O and/or Si2N2O to SiO2 phase.

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Theoretical Studies of Hydrogen Bond Interactions in Fluoroacetic Acid Dimer

  • Chermahini, Alireza Najafi;Mahdavian, Mohsen;Teimouri, Abbas
    • Bulletin of the Korean Chemical Society
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    • 제31권4호
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    • pp.941-948
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    • 2010
  • Ab initio and density functional theory methods have been employed to study all theoretically possible conformers of fluoroacetic acid. Molecular geometries and energetic of cis and trans monomers and cis dimers in gaseous phase have been obtained using HF, B3LYP and MP2 levels of theory, implementing 6-311++G(d,p) basis set. It was found that cis rotamers are more stable. In addition, it was found that in comparison with acetic acid the strength of hydrogen bonding in fluoroacetic acid decreased. The infrared spectrum frequencies and the vibrational frequency shifts are reported. Natural population and atom in molecule analysis performed to predict electrostatic interactions in the cyclic H-bonded complexes and charges. The proton transfer reaction is studied and activation energy is compared with acetic acid proton transfer reaction.

디지틀 셀룰러 이동통신을 위한 동기 부호 설계 (Synchronization Sequency Design for Digital Cellular Mobile Communications)

  • 한영일
    • 한국통신학회논문지
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    • 제25권10A호
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    • pp.1480-1485
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    • 2000
  • 본 논문은 디지틀 셀룰러 이동전화를 위한 효과적인 동기시퀀스 설계에 대하여 기술하였다. 논문에서 연구된 동기시퀀스의 종류는 시프트 되지 않은 시퀀스와 가운데로 지연 시프트된 시퀀스에서 극성이 반대이고 크기가 같은 두 개의 피크값을 갖고, 그 외 다른 모든 지연에서 가장 낮은 자기상관함수값을 갖는다. 이들 동기시퀀스들은 동기 타이밍을 이중점검하고 동기탐색시간을 줄이기 위해서 이용될 수 있다.

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Microstructure, Electrical Property and Nonstoichiometry of Light Enhanced Plating(LEP) Ferrite Film

  • 김 돈;이충섭;김영일
    • Bulletin of the Korean Chemical Society
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    • 제19권5호
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    • pp.533-539
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    • 1998
  • A magnetic film was deposited on a slide glass substrate from aqueous solutions of $FeCl_2$ and $NaNO_2$ at 363 K. XRD analysis showed that the film was polycrystalline magnetite $(Fe_{3(1-{\sigma})}O_4)$ without impurity phase. The lattice constant was 0.8390 nm. Mossbauer spectrum of the film could be deconvoluted by the following parameters: isomer shifts for tetrahedral $(T_d)$ and octahedral $(O_h)$ sites are 0.28 and 0.68 mm/s, respectively, and corresponding magnetic hyperfine fields are 490 and 458 kOe, respectively. The estimated chemical formula of the film by the peak intensity of Mossbauer spectrum was $Fe_{2.95}O_4$. Low temperature transition of the magnetite (Verwey transition) was not detected in resistivity measurement of the film. Properties of the film were discussed with those of pressed pellet and single crystal of synthetic magnetites. On the surface of the film, magnetite particles of about 0.2 μm in diameter were identified by noncontact atomic force microscopy (NAFM) and magnetic force microscopy (MFM).

Design of a Dual mode Three-push Tripler Using Stacked FETs with Amplifier mode operation

  • Yoon, Hong-sun;Park, Youngcheol
    • 전기전자학회논문지
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    • 제22권4호
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    • pp.1088-1092
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    • 2018
  • In this paper, we propose a dual-mode frequency tripler using push-push and stacked FET structures. The proposed circuit can operate either in frequency multiplier mode or in amplifier mode. In the frequency multiplier mode, push-push frequency multiplication is achieved by allowing input signals with particular phase shifts. In the amplifier mode, the device operates as a distributed amplifier to obtain high gain. Also both modes were designed using stacked FET structure. The designed circuit showed frequency tripled output power of 9.7 dBm at 2.4 GHz with the input at 800 MHz. On the other hand, in the amplifier mode, the device showed 8.9 dB of gain to generate 19.5 dBm at 800 MHz.