• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• 한국시뮬레이션학회논문지
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• 제23권4호
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• pp.41-49
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• 2014

능동 합성개구면소나에 의한 해저부설 소형물체 탐지처리 기술은 공간적 제약을 받는 소형 무인화 시스템에서 짧은 센서어레이 사용이 가능하므로 개구면 합성처리에 의해 탐지성능을 올릴 수가 있다. 하지만 플렛폼의 정속도 직선기동에 의한 제한조건은 여러 가지 외부 환경요인과 정확한 위상차 합성 처리에 있어서 많은 오차를 유발하게 된다. 본 연구에서는 이러한 시스템에 탑재되는 능동형 합성개구면처리에 대한 적용 가능성을 분석하고, 전용 시뮬레이터를 구성하여 진행경로 변동에 의해 발생되는 위상차 부정합에 따른 탐지해상도 성능변화를 비교 검토하고자 한다. 시뮬레이션은 코히어런트 초점처리 모델에 경로변동 모듈을 추가하여 실행하였으며, 결과에서 알 수 있듯이 합성개구면처리에 의한 해저 소형물체 탐지성능은 플렛폼의 경로변동에 의한 위상차 부정합 및 S/N비 변화에 의해 많은 변화가 있음을 알 수 있었다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.334-336
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• 2009

An elastic-plasticity model during the austenitic decomposition was derived and implemented to incorporate the two important deformation behaviors observed during the phase transformations: the volumetric strain and transformation induced plasticity due to the temperature change and phase transformation. To obtain transformed phase volume fractions during cooling, the fourth order Runge-Kutta method was used to solve the Kirkaldy's phase kinetics model which is function of temperature, austenitic grain size and chemical composition. The volumetric strain was calculated by considering the densities of constituent phases, while the transformation induced plasticity was based on the micro-plasticity due to the volume mismatch between soft austenitic phase and other harder phases. The constitutive equations were implemented into the implicit finite element software and a simple boundary value problem was chosen as a model problem to validate the effect of transformation plasticity on the deformation behavior of steel under cooling from high temperature. It was preliminary concluded that the transformation plasticity plays a critical role in relaxing the developed stress during forming and thus reducing the magnitude of springback.

• ETRI Journal
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• 제31권5호
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• pp.619-621
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• 2009

In this letter, we study the influence of receiver imperfections on bit error rate (BER) degradations in detecting low-density parity-check coded multilevel phase-shift keying signals transmitted over a Rician fading channel. Based on the analytical system model which we previously developed using Monte Carlo simulations, we determine the BER degradations caused by the simultaneous influences of stochastic phase error, quadrature error, in-phase-quadrature mismatch, and the fading severity.

• Journal of information and communication convergence engineering
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• 제6권3호
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• pp.353-357
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• 2008

One objective in developing the next generation of wireless communication systems is to increase data rates and reliability. A promising way to achieve this is to combine multiple-input and multiple-output signal processing with a space-time coding scheme, which offers higher coding and diversity gains and improves the spectrum efficiency and reliability of a wireless communication system. It is noted, however, that time delay differences and phase differences among different channels increase symbol interference and degrade system performance. In this letter, we investigate phase differences and their effects on multiple-input and multiple-output systems, and propose a compensation algorithm for the Rayleigh fading model to minimize their effects.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.449-451
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• 2008

This paper studies the instability between homopolar generator and constant power load with negative impedance characteristics, provides the design method of homopolar generator system which overcomes the instability. In case of magnitude and phase of impedance of source and load mismatch, control instability of source can occur. For the safety of phase of load impedance, the gain of P, I controller with sufficient phase margin is applied through analysis on the simulation model of generator system, and the gain limit of load impedance is ensured by limitation of the gain margin of generator system. The stability of power system can be increased by considering and analyzing the impedance of source and load.

• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.241-249
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• 2015

Phase-locked-loops (PLL) have been employed in high-speed data transmission systems like wireless transceivers, disk read/write channels and high-speed interfaces. The majority of the researchers use a charge pump (CP) to obtain high performance from PLLs. This paper presents a review of various CMOS CP schemes that have been implemented for PLLs and the relationship between the CP parameters with PLL performance. The CP architecture is evaluated by its current matching, charge sharing, voltage output range, linearity and power consumption characteristics. This review shows that the CP has significant impact on the quality performance of CP PLLs.

• The Journal of the Acoustical Society of Korea
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• 제24권2E호
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• pp.61-66
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• 2005

Experimental work in underwater acoustic communications using passive phase conjugation has shown that the demodulation error depends on the relative drift rate between the source and receiver [Rouseff et al., IEEE J. Oceanic Eng. 26, 821-831 (2001)]. The observed effect involves the mismatch between the initial impulse response and the subsequent response after the source or receiver has changed locations. In the present work, the effect of drifting source is analyzed by numerical simulations and compared to the experimental results. The communications bit error rate is qualified as a function of drift rate, drifting direction, and source-receiver range.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.257-262
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• 2001

Single crystalline films of La doped YIG(yttrium iron garnet) were grown by the liquid phase epitaxy. The lattice constants of films obtained by DCD(double crystalline diffractometer) measurement increased with increasing La contents in films. In particular, lattice constants of films grown wiht Y/La=20 solution were nearly same as those of GGG (gadolinium gallium garnet) substrate. The saturation magnetization measured with VSM (vibrating sample magnetometer) was about 1750Gauss which is the same as that of pure YIG irrespective of La contents in films. FMR(ferromagnetic resonance) linewidth of La doped YIG was smaller than that of pure YIG. Since appropriate La doping decreases the lattice mismatch between film and substrate, the FMR linewidth was Y/La=20 in this experiment.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.