• Journal of Satellite, Information and Communications
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• v.1 no.1
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• pp.59-64
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• 2006

The broadband power detector for power amplitude envelope detection of the direct-conversion Six-port output signal was designed and implemented in this paper. The power detector should be linearly operated to produce the linear amplitude and phase signal for input RF signals in required broadband frequency range. The power detector should be designed under conditions of matching circuit with low VSWR, which protect unbalanced phase signal from reflection signal due to mismatch between the output port of a six-port and the input port of a power detector. The designed power detectors, which were implemented in L-band with 50 ohm matching and Ku-band with multiple LC matching circuits and isolator, respectively, were analyzed in viewpoints of the utilization as a power detector of direct conversion Six-port. The dynamic range of designed power detectors were also measured and rvaluated as a power detector of Six-port circuit.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Journal of the Institute of Convergence Signal Processing
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• v.14 no.2
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• pp.136-146
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• 2013

In this paper, the residual delay compensation algorithm is proposed for FX-type KJJVC. In case of initial version as that design algorithm of KJJVC, the integer calculation and the cos/sin table for the phase compensation coefficient were introduced in order to speed up of calculation. The mismatch between data timing and residual delay phase and also between bit-jump and residual delay phase were found and fixed. In final design of KJJVC residual delay compensation algorithm, the initialization problem on the rotation memory of residual delay compensation was found when the residual delay compensated value was applied to FFT-segment, and this problem is also fixed by modifying the FPGA code. Using the proposed residual delay compensation algorithm, the band shape of cross power spectrum becomes flat, which means there is no significant loss over the whole bandwidth. To verify the effectiveness of proposed residual delay compensation algorithm, we conducted the correlation experiments for real observation data using the simulator and KJJVC. We confirmed that the designed residual delay compensation algorithm is well applied in KJJVC, and the signal to noise ratio increases by about 8%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.8
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• pp.857-864
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• 2010

In this paper, we analyse the effect of the path imbalances(gain and phase mismatches) in LINC(LInear amplification with Nonlinear Component) system, and propose a simple scheme using LUTs(Look Up Table) to compensate the path imbalances. The EVM(Error Vector Magnitude) and ACPR(Adjacent Channel Power Ratio) of the LINC system are degraded significantly by the path imbalances because it adopts an outphasing technique. The EVM and ACPR are theoretically extracted for two variables(gain and phase mismatch factors) and 2-D LUTs for those are generated based on the analysis. The efficient and simple compensation scheme for the path imbalances is proposed using the 2-D LUTs. A LINC system with the suggested compensation scheme is implemented, and the proposed method is verified with an experiment. A 16-QAM signal with 1.5 MHz bandwidth is used. Before the compensation, the path gain ratio was 95 % and phase error was $19.33^{\circ}$. The proposed scheme adjusts those values with 99 % and $0.5^{\circ}$, and improves ACPR about 18.1 dB.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.334-339
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• 2004

Microstructures and mechanical properties of SPSed monolithic HAp, HAp-Ag, and HAp-ZrO$_2$sintered bodies were investigated by the XRD, SEM, and TEM techniques. The nano-sized HAp powders were successfully synthesized by precipitation of Ca(NO$_3$)$_2$4$H_2O$ and (NH$_4$)HPO$_4$solution. In the HAp-Ag composite, the shrinkage cavities were observed at the interfaces between HAp and large sized Ag particles due to the mismatch of their thermal expansion coefficients. However, no found the defect at the interfaces between HAp and fine-sized Ag particles. In the HAp-ZrO$_2$composite. nano-sized ZrO$_2$particles were almost dispersed at the grain boundaries of HAp phase. The fracture toughness of HAp-Ag and HAp-ZrO$_2$ composites were increased due to the plastic deformation and phase transformation mechanisms of the dispersed fine Ag and ZrO$_2$phase in the HAp matrix, respectively.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1590-1592
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• 1999

We have fabricated good quality superconducting $YBa_2Cu_3O_{7-{\delta}}$ thin films on Hastelloy(Ni-Cr-Mo alloys) with $CeO_2$ buffer layers by in-situ pulsed laser deposition in a multi-target processing chamber. Using one of electrical properties of YBCO superconducting which the resistance approaches to zero dramatically on transition temperature, we have researched to make power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to make films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting layer and non-crystallization of YBCO on amorphous substrate. From early research, two ways-using textured metallic substrate and buffer layer-were proposed to overcome theses difficulties. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with $3.82{\AA}$ of a-axis lattice parameter of YBCO on (110) direction of $CeO_2$. In order to enhance the crystallization of YBCO films on metallic substrates we deposited $CeO_2$ buffer layers at varying temperature $700^{\circ}C$ to $800^{\circ}C$ and $O_2$ pressure. By X-ray diffraction, we found that each domination of (200) and (111) orientations were strongly relied upon the deposition temperature in $CeO_2$ layer and the change of the domination of orientation affects the crystallization of YBCO upper layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.292-299
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• 2015

An envelope elimination and restoration transmitter that uses a tri-level envelope encoding scheme is presented for improving the efficiency and linearity of the system. The proposed structure amplifies the same magnitude signal regardless of the input peak-to-average power ratio and reduces the quantization noise by spreading out the noise to the out-of-band frequency, resulting in the enhancement of power efficiency. An improved linearity is also obtained by providing a new timing mismatch calibration technique between the envelope and phase signal. Implementation in a 130 nm CMOS process, transmitter measurements on a 20-MHz long-term evolution input signal show an error vector magnitude of 3.7 % and an adjacent channel leakage ratio of 37.5 dBc at 2.13 GHz carrier frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.222-229
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• 2016

Active synthetic aperture sonar on the small UUV is generated several trajectory disturbances under the influences of underwater environments, and causing a large error in the synthetic aperture processing. In this paper, we analyzed the effects of azimuth resolution for the phase mismatch of the synthetic aperture focus processing when the periodic or random trajectory disturbances was generated on the side direction. The simulation results show that ghost targets are generated and azimuth resolution is very deteriorated when disturbance amplitude is greater than $0.3{\lambda}$ and disturbance period is greater than $2L_{sa}$ in the periodic trajectory disturbances environments. And detection performance on the seabed small objects by the synthetic aperture processing is shown that there is a significant effects on the azimuth resolution depending on the types and conditions of the platform trajectory disturbance variations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.14-14
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• 2006

Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.7
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• pp.128-134
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• 2010

In this paper, a high-power 20-way stripline power divider with low insertion loss and low side lobe level is successfully designed, fabricated and measured as a feed network for an S-band linear array antenna having Dolph-Chebyshev current distribution which has a narrow beam width and very low side lobe level (SLL). The 20-way stripline power divider consists of an 8-way power divider, three 4-way power dividers and three ring hybrids. It utilizes a T-junction structure as a basic element for power dividing. Notches and modified input/output N-to-stripline transitions are used for improving insertion loss and return loss. The fabricated power divider shows insertion loss less than 0.3 ㏈ and rms phase mismatch less than 8o in the full bandwidth. A final 40-way power divider is synthesized by combining symmetrically two 20-way power dividers and is expected to have SLL over 40 dB, based on the measured results of the 20-way power divider.