• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.124-127
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• 2005

Rewritable optical memory devices such as an CD-RW and DVD+RW are data storage media, which take advantage of the different optical properties in the amorphous and crystalline states of phase change materials. The switching property, structural transformation, transformation kinetics and chemical bindings of $Ge_xSb_{100-x}$($6{\le}x{\le}$34) were studied to investigate the feasibility of applying $Ge_xSb_{100-x}$ alloys in optical memory. The $Ge_xSb_{100-x}$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, inductively coupled plasma atomic emission spectrometer (ICP-AES) and atomic force microscopy (AEM). Optimum fiim composition of $Ge_xSb_{100-x}$ was studied and its minimum time fur laser induced crystallization and optical contrast fur phase transition was performed. These results might be correlated with the binding energies between Ge and Sb, and indicate that $Ge_xSb_{100-x}$ have an potential far optical memory applications.

• Fibers and Polymers
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• v.2 no.2
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• pp.81-85
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• 2001

The effects of rate of phase separation to ester interchange reactions and the repulsive pair interaction energy on the phase behavior in a phase-separated immiscible polyester blend are investigated using a Monte Carlo simulation method. The time evolution of structure factor and the degree of randomness are monitored as a function of homogenization time. When the phase separation is dominant over ester interchange reactions, the domain size slowly increases with homogenization time. However, when the pair interaction becomes less repulsive, the domain size does not significantly change with homogenization time. On the other hand, when ester interchange reactions are dominant over the phase separation, the homogenization proceeds without a change in the domain size. The higher the extent of phase separation, the lower the increasing rate of the DR. However, when the phase separation is sufficiently dominant, the effect of the extent of phase separation on the increasing rate of the degree of randomness become less significant.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2008.10a
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• pp.151-152
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• 2008

PCM has the ability to change their state, these materials absorb energy during the heating process as a body contact and release energy during a reverse cooling process as phase change take place. Using the thermal energy storage of PCM which has a melting point 15 to $35^{circ}C$ is one of the most effective ideas for utilization in textile finish. In this study, microencapsulated PCM(MCPCM) were synthesized by sol-gel method using the octadecane(or nonadecane) as PCM and the silica as microcapsule materials. To develop smart temperature adaptable textile, coating process was applied to textile substrate using a composition included MCPCM.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.619-623
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• 2000

Alumina membrane was prepared by sol-gel coating method using boehmite powder(${\Upsilon}-AlOOH$). The supported and the unsupported alumina membrane were fabricated to investigate the phase transformation and change of microstructure. It is important to control the homogeneous pore size and distribution in application of filtering process. The ${\theta}-to\;{\alpha}-AL_2O_3$ phase transformation (XRD) and the change of microstructure was investigated using scanning electron microscopy(SEM). XRD patterns showed that the supported membrane had $100^{\circ}C$ higher ${\theta}-to\;{\alpha}-AL_2O_3$ transformation temperature compared to the unsupported membrane. The similar effect was also observed for microstructural change of the membrane.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.124-128
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• 1997

An attempt was made to understand the dissolution and reprecipitation behavior of the constituent phases such as TiC, TiN, and Ti(CN) in TiC-TiN-Ni system. During the liquid-phase sintering the TiC phase was found to dissolve preferentially in Ni binder. The solid-solution phase, Ti(CN), formed around the TiN phase, resulting in a core/rim structure. This result was reproduced when large TiC particles were used with fine TiN particles. The path for the microstructural change in TiC-TiN-Ni system was largely controlled by the difference in the interfacial energy of each phase with the liquid binder phase. The results were discussed with thermodynamic principles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.9-14
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• 1996

The dependence of microstructural and optical properties of Ag-In-Sb-Te thin films on annealing heat-treatments was studied. It was found from the present work that the increase of reflectance after annealing heat-treatment is related with phase change of Ag-In-Sb-Te thin film from amorphous state to crystalline phases which involve Sb crystalline phase and AgInTe$_2$ stoichiometric phase. On the other hand, the reflectance is decreased after high temperature annealing (above 450$^{\circ}C$), due to the morphology .mange of film surface. For the purpose of practical application(erasable optical disk), we fabricated quadrilayered Ag-In-Sb-Te alloy disk, and annealed it with continuous laser beam. As result of this laser\ulcorner annealing treatment, we found that the increment of reflectance is 9.3% at 780nm wavelength. It might be considered that Ag-In-Sb-Te alloy optical disk is the big promising candidate for the erasable optical memory medium.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.12
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• pp.891-896
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• 2010

The objective of the present study is to reveal the effects of a phase-change material on the performance of a Kimchi refrigerator. Two-percent salt water, of which melting temperature was $-1.1^{\circ}C$, was used for the phase-change material. The salt water was packed in silicon cases and inserted between Kimchi container and the copper pipe of the evaporator. The maximum and minimum temperatures of the inner wall of the Kimchi container without salt-water pack were $-0.2^{\circ}C$ and $-8.9^{\circ}C$, which were remarkably improved by using the salt-water packs, resulting $-0.5^{\circ}C$ and$ -1.9^{\circ}C$. This shows a useful application of using phase-change materials for accurate temperature controls.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.331-336
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• 2004

The phase change due to the reflection from target surfaces in a white-light interferometer induces measurement errors when target surfaces are composed of dissimilar materials. We prove that this phase change on reflection as the polarization of the white-light changes causes a shift of both envelope peak position and fringe peak position of several tens of nanometers as the polarization of the white-light changes. In addition, we propose a new equation for white-light interference fringes depending on the polarization of the source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.