• Title/Summary/Keyword: perpendicular exchange anisotropy

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Exchange Bias Perpendicular Magnetic Anisotropy by Buffer Layer and Inserted Layer in [Pd/Co]5/FeMn Multilayer ([Pd/Co]5/FeMn 막에서의 바닥층과 삽입층에 의한 교환바이어스수직자기이방성)

  • Joo, Ho-Wan;An, Jin-Hee;Lee, Mi-Sun;Kim, Bo-Keun;Choi, Sang-Dea;Lee, Kee-Am
    • Journal of the Korean Magnetics Society
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    • v.14 no.5
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    • pp.192-195
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    • 2004
  • Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$/FeMn(15 nm) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 20$0^{\circ}C$ in about 5$0^{\circ}C$ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the H$_{ex}$ obtained the largest 127 Oe. And if Pd was a buffer layer, H$_{ex}$ obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.

Effect of Magnetic Property Modification on Current-Induced Magnetization Switching with Perpendicular Magnetic Layers and Polarization-Enhancement Layers

  • Kim, Woo-Jin;Lee, Kyung-Jin;Lee, Taek-Dong
    • Journal of Magnetics
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    • v.14 no.3
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    • pp.104-107
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    • 2009
  • The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

Local Laser Annealing in Exchange-Biased Films with Out-of-Plane and In-Plane Magnetic Anisotropy

  • Choi, S.D.;Kim, S.W.;Jin, D.H.;Yun, D.K.;Lee, M.S.;Ahn, J.H.;Joo, H.W.;Lee, K.A.;Lee, S.S.;Hwang, D.G.
    • Journal of Magnetics
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    • v.11 no.2
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    • pp.66-69
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    • 2006
  • Local magnetization reversal in the exchange-biased NiFe/FeMn and $[Pd/Co]_5/FeMn$ multilayers with in-plane and out-of-plane magnetic anisotropy was achieved by using laser annealing. The local annealed NiFe/FeMn film under the opposite magnetic field shows a magnetoresistance (MR) curve having two symmetric peaks at the positive and negative exchange biasing field (${\pm}H_{ex}$). The intensity of the nucleated MR peak rises as the exposed area extends during the laser annealing process, and the peak disappears under the reverse magnetic field. In the case of [Pd/Co]/FeMn films, the local magnetization reversal increased gradually as the laser power increases. The locally reversed magnetization was restored under the opposite magnetic field.

Dependence of Coercivity and Exchange Bias by Thickness and Materials of Inserted Layer in [Pd/Co]5/X/FeMn Multilayer with Out-of-plane Magnetic Anisotropy (수직자기이방성을 갖는 [Pd/Co]5/X/FeMn 다층박막에서 삽입층 물질과 두께에 따른 교환바이어스와 보자력의 의존성)

  • Heo, Jang;Park, Dong-Hun;Kang, Wang-Son;Ji, Sang-Hun;Lee, Ky-Am
    • Journal of the Korean Magnetics Society
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    • v.18 no.5
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    • pp.185-189
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    • 2008
  • We observe the change of coercivity and exchange bias, depending on inserting material and thickness in a [Pd(0.6 nm)/$Co(0.2)]_5$/ FeMn(10) multilayer structure with perpendicular anisotropy. When 0.78 and 1.28 nm thick NiFe substitutes for Co in a $[Pd(0.6 nm)Co(0.2)]_4$/Pd(0.6)/NiFe(t)/FeMn(10) structure, we obtain the exchange bias of 360 Oe. In addition, when $Co_8Fe_2$ and $Co_9Fe_1$ are inserted for Co/FeMn interface, we obtain the exchange bias of 380 nm for a 0.68 nm thick $Co_8Fe_2$ and 580 Oe for a 0.52 nm thick $Co_9Fe_1$.

A Modelling of magnetization reversal characteristics in magneto-optic memory system (광자기 기억장치에서의 자화반전 특성 모델링)

  • 한은실;이광형;조순철
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.10
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    • pp.1849-1860
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    • 1994
  • Domain wall dynamics in thin film of amorphous Rare Earth-Transistion Metal alloys were investigated using numerical integration of the Landau-Lifshitz-Gilbert equation. The thin film was divided into a two-dimensional square lattice ($30\times30$) of dipoles. Nearest-neighbor exchange interaction magnetic anisotropy, applied magnetic field, and demagnetiing field of interacting anisotropy, applied magnetic field, and demagnetizing field of interacting dipoles were considered. It was assumed that the film had perfect uniaxial anisotropy in the perpendicular direction and the magnetization reversal existed in the film. The time of domain wall creation and the thickness of the wall were investigated. Also the motion of domain walls under an applied field was considered. Simulation results showed that the time of domain wall creation was decreased significantly and the average velocity of domain wall was increased somewhat when the demagnetizing field was considered.

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