• Korean Journal of Radiology
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• 제19권6호
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• pp.1161-1171
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• 2018

Objective: The aim of this study was to investigate diffusion tensor (DT) imaging-derived properties of benign oligemia, true "at risk" penumbra (TP), and the infarct core (IC) during the first 3 hours of stroke onset. Materials and Methods: The study was approved by the local animal care and use committee. DT imaging data were obtained from 14 rats after permanent middle cerebral artery occlusion (pMCAO) using a 7T magnetic resonance scanner (Bruker) in room air. Relative cerebral blood flow and apparent diffusion coefficient (ADC) maps were generated to define oligemia, TP, IC, and normal tissue (NT) every 30 minutes up to 3 hours. Relative fractional anisotropy (rFA), pure anisotropy (rq), diffusion magnitude (rL), ADC (rADC), axial diffusivity (rAD), and radial diffusivity (rRD) values were derived by comparison with the contralateral normal brain. Results: The mean volume of oligemia was $24.7{\pm}14.1mm^3$, that of TP was $81.3{\pm}62.6mm^3$, and that of IC was $123.0{\pm}85.2mm^3$ at 30 minutes after pMCAO. rFA showed an initial paradoxical 10% increase in IC and TP, and declined afterward. The rq, rL, rADC, rAD, and rRD showed an initial discrepant decrease in IC (from -24% to -36%) as compared with TP (from -7% to -13%). Significant differences (p < 0.05) in metrics, except rFA, were found between tissue subtypes in the first 2.5 hours. The rq demonstrated the best overall performance in discriminating TP from IC (accuracy = 92.6%, area under curve = 0.93) and the optimal cutoff value was -33.90%. The metric values for oligemia and NT remained similar at all time points. Conclusion: Benign oligemia is small and remains microstructurally normal under pMCAO. TP and IC show a distinct evolution of DT-derived properties within the first 3 hours of stroke onset, and are thus potentially useful in predicting the fate of ischemic brain.

• Radiation Oncology Journal
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• 제19권1호
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• pp.1-9
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• 2001

목적 : 혈관조영상 잠재혈관기형(angiographically occult vascular malformation, AOVM)의 치료에 정위방사선수술을 적용하여 병변의 영상학적 반응과 임상 경과, 치료에 대한 부작용을 분석하여 AOVM의 치료 시 정위방사선수술의 역할을 정립하고자 한다. 대상 및 방법 : 1995년 2월부터 1999년 12월까지 AOVM으로 진단 받은 11명(12병변)의 환자에 대하여 선형가속기를 이용한 정위방사선수술을 시행하였다. 모든 병변은 자기공명영상에서 병변의 중심부에는 이질적인 고신호를 보이며, 저신호의 테두리로 둘러 쌓여 경계가 분명한 혈관기형 소견을 보였다. 정위방사선수술 시 처방선량은 회전중심점 선량 기준으로 67~80% (중앙값 80%) 등선량곡면에 13~25 Gy (중앙값 16 Gy)이었으며, 모두 단일 회전중심점을 이용하였고, 8~20mm (중앙값 14 mm) 크기의 원형 콜리메이터를 사용하였다. 결과 : 추적관찰 기간은 12~56개월(중앙값 42개월)이었다. 재출혈이 일어난 경우는 3예로 치료 후 5, 6, 12개월 때 각 1차례씩 발생하였고 이후 추가적인 재출혈은 없었다. 정위방사선수술로 인한 조직괴사는 2예에서 발생하였으며, 모두 영구적인 신경학적 후유증을 초래하였다. 임상증세를 동반하지 않은 채 T2 강조영상에서 병변 주위의 부종이 관찰된 경우도 1예 발생하였다. 결론 : 정위방사선수술을 이용한 AOVM의 치료는 재출혈을 효과적으로 방지할 수 있는 치료방법으로 생각된다. 그러나 동정맥기형에 비하여 신경학적 후유증이 발생할 확률이 높기 때문에 치료 환자의 선택과 처방선량의 결정 시에는 보다 신중한 고려가 필요하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 공업화학
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• 제32권3호
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• pp.268-276
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• 2021

최근 무선통신 기기가 보편화됨에 따라 이로부터 발생하는 전자기파를 제어할 수 있는 방법에 대한 관심이 높아지고 있다. 전자기파 제어 물질로 가장 흔히 사용되는 것은 자성 물질이지만 제품에 적용 시 제품이 무겁고 두꺼워지는 특징 때문에 일반 전자기기에 사용하기에는 문제가 있어 이를 해결하기 위해 가볍고 두께가 얇은 고분자 유연메타 전자소자가 제시되었다. 또한 고분자 유연메타 전자소자는 단일 제품을 다양한 곡률에 적용할 수 있어 곡면 형상이 많은 전자기기에 사용하기에도 적합하다. 그러나 이러한 고분자 유연메타 전자소자를 곡면에 적용하기 위해서는 곡률변화에 따른 전자기파 제어 특성의 안정성 평가가 필수적으로 요구된다. 이에 본 연구에서는 도선 면적이 일정할 때 도선 길이에 따른 저항 변화율이 전자기파 제어 특성과 역의 관계라는 점을 활용하여 고분자 유연메타 전자소자의 전기적 특성 변화를 통해 전자기파 제어 특성을 예측할 수 있는 방법을 개발하였고, 이를 이용하여 고분자 유연메타 전자소자의 곡률 안정성 평가를 수행하였다. 그 결과 곡률 반경이 감소할수록 도선 길이에 따른 저항 변화율이 증가하였고, 곡률 유지 시간에 의한 변화는 없었다. 또한 곡면 적용 시 도선에 영구적인 변화와 곡면 제거 시 회복 가능한 변화가 복합적으로 발생하였고, 이러한 변화의 원인이 곡면 적용 시 가해진 인장응력에 의해 생성된 도선 내 수직방향 크랙이라는 사실도 밝혀냈다.