• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.379-382
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of $0.3 cm^2/V.sec$ and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$ and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of $0.3Cd/m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.668-672
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.375-378
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• 2004

In this paper, we fabricated pantacene TFTs using PVP copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and poly (melamine-co-formaldehyde) the performance has been changed. We obtained the best performance with the mobility of 0.12cm2/V sec and the on/off current ratio of $1.19{\times}10^6$ for the case of $10wt\%$ PVP copolymer mixed with $5wt\%$ poly(melamine-co-formaldehyde). Additionally using OTFTs with the above PVP gate insulator, we fabricated the integrated circuit including inverter which produced the gain of 5.56 on the glass substrate and gain of 9.7 on the plastic (PET) substrate. And the threshold voltage was respectively +8V and +14v$ldots$

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.247-250
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• 2008

Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.184-187
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• 2002

In this work, the electrical characteristics of organic thin film transistors with the stacked organic gate insulators have been studied. PVP(Polyvinylphenol) and polystyrene were used as gate insulating materials. Both the high dielectric constant of PVP and better insulating capability of polystyrene were compensatorily adopted in two different stacking orders of PVP-polystyrene and polystyrene-PVP. The output characteristics of the device with the stacked gate insulator showed substantial improvement compared with those of the devices with either PVP or polystyrene gate insulator: Furthermore, these stacked organic gate insulators can differently affect the TFT characteristics with the stacking orders. The electrical properties of TFTs with organic gate insulators stacked in different orders are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.543-544
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• 2006

Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide ($ZrO_2$) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility $.66\;cm^2$/V s and $I_{on}/I_{off}$>$10^5$ was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.