• Title/Summary/Keyword: pentacene TFT

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Degradation Study of Organic TFTs under UV irradiation stress

  • Yan, Jing-Yi;Liao, Ko-Pin;Liao, Jin-Long;Chen, Liang-Hsiang;Lin, Mei-Ru;Lee, Tzu-Wei;Yeh, Shu-Tung;Cheng, Kung-You;Wu, Yen-Yu;Yu, Chien-Hsien;Lee, Yen-Ying;Ho, Jia-Chong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.226-227
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    • 2008
  • Pentacene based TFT showed a degraded mobility and saturation current (Ion) after exposure to the high energy ultraviolet (UV). In this article, we optimize the thickness of UV resisted layer on OTFT to restrain the degradation from protect layer deposition and study the UV aging effect of pentacene based TFT. The OTFT deivce with UV resisted layer could keep over 50% mobility after suffered UV $10^3J$.

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Fabrication of Pixel Array using Pentacene TFT and Organic LED (펜타센 TFT와 유기 LED로 구성된 픽셀 어레이 제작)

  • Choe Ki Beom;Ryu Gi Seong;Jung Hyun;Song Chung Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.12
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    • pp.13-18
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    • 2005
  • In this paper, we fabricated a pixel array in which each pixel was consisted of Organic Thin Film Transistor (OTFT) serially connected with Organic Light Emitting Diode (OLED) on Poly-ethylene-terephthalate (PET) substrate and the number of pixels was 64 x 64. As a gate insulator of OTFT, the thermally cross-linked PVP was used and the organic semiconductor, Pentacene, is deposited for an active layer of OTFT considering the compatibility with PET substrate. The mobility of OTFT is $1.0\;cm^2/V{\cdot}sec$ as a discrete device, but it was reduced to $0.1\~0.2\;cm^2/V{\codt}sec$ in the array. We analyzed the operation of the array and confirmed the current driving ability of OTFTs for the OLEDs.

혼합된 PVP-PVA 유기 게이트 절연막이 유기 박막 트랜지스터의 전기적 특성에 미치는 영향에 대한 연구

  • Jo, Byeong-Geun;Kim, Gi-Jung;No, Yong-Han
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.42-42
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    • 2009
  • To make up for the disadvantages of PVA gate, we blend PVP(20% wt) with PVA(5% wt) as a gate material. The best ratio for the mixture was 5:5, PVP-PVA blended gate used MIM structure showed better performance in leakage current and capacitance. PVP-PVA blended gate was fabricated by spin-coating process and pentacene was used as an organic TFT channel layer by thermal evaporation. Overall OTFT performance has also increased as PVP-PVA blended gate has relatively lower leakage current and higher capacitance than pure PVA gate has.

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Display Panel for AMOLED with 64 x 64 Pixels on 2' Plastic Substrate

  • Song, Chung-Kun;Ryu, Gi-Seong;Choe, Ki-Beom
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.356-358
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    • 2004
  • In this paper we fabricated and succeeded to demonstrate a test panel for AMOLED on 2" glass and PET substrate. The test panel consisted of an array of 64 x 64 pixels in which OLEDs was driven by pentacene TFT. OTFTs were made of the inverted staggered structure and employed polyvinylphenol as the gate insulator and pentacene thin film as the active layer, producing the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs were composed of TPD for HTL and Alq3 for EML with 35nm thick each, generating green monochrome light.

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Improvement of Pentacene TFTs performance by surface treatment on Poly(4-vinylephenol) Gate insulator (Poly (4-vinylephenol) Gate 절연층의 표면 처리에 의한 Pentacene TFT의 성능 비교)

  • Kim, Hong-Suk;Ahn, Seok-Keun;Xu, Yong-Xian;Hang, Seung-Bum;Song, Chung-Kun
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.477-478
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    • 2006
  • In this paper, we could improve the mobility with OTS treatment on PVP gate, and also reduce the off-state current, which was usually large after OTS treatment, by using cosolvent. Also we treated Hexamethyl-disilazane (HMDS) and Ozone on PVP. It gives large off-state currents and on-currents.

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Study on the Electrical Characterization of Inverted Staggered Pentacene Thin Film Transistor using Hydrogen Plasma Treatment (수소 플라즈마 처리를 이용한 역스테거드형 펜타센 트랜지스터의 전기적 특성 향상에 대한 연구)

  • 장재원;이주원;김재경;김영철;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.11
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    • pp.961-968
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    • 2003
  • In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

Study on operation stability of printed organic TFTs

  • Kamata, T.;Suemori, K.;Yoshida, M.;Uemura, S.;Hoshino, S.;Kozasa, T.;Takada, N.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1216-1219
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    • 2007
  • We have been developing printed organic TFTs for flexible displays. In this study, we have pay attention to the operation stability improvement of the organic TFTs, and studied several factors especially depending on the dielectric layers. From the detailed analysis of the effects of dielectric layers, we have proposed a new printed dielectric layer which is mainly consisting of metal oxide and gives high operation stability

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Photo-Leakage Currents in Organic Thin-Film Transistor

  • Cho, Sang-Mi;Han, Seung-Hoon;Kim, Jun-Hee;Lee, Sun-Hee;Choo, Dong-June;Uchiike, H.;Oh, Myung-Hwan;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1386-1389
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    • 2005
  • We report the light illumination effect on the performance of pentacene organic thin-film transistor (OTFT). The TFT performance with and without illumination were measured at various temperatures. The off-state currents increase linearly with light intensity in the region of gate voltage where the holes are majority carriers in the TFT channel. The minimum photocurrents of OTFT increase with increasing light intensity.

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