• Title/Summary/Keyword: patterning effect

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Vibration Analysis of PCB Manufacturing System Using Maskless Exposure Method (Maskless 방식을 이용한 PCB생산시스템의 진동 해석)

  • Jang, Won-Hyuk;Lee, Jae-Mun;Cho, Myeong-Woo;Kim, Joung-Su;Lee, Chul-Hee
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.19 no.12
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    • pp.1322-1328
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    • 2009
  • This paper presents vibration analysis of maskless exposure module in printed circuit board(PCB) manufacturing system. In order to complete exposure process in PCB, masking type module has been widely used in electronics industries. However, masking process confronts some limitations of application due to higher production cost for masking as well as lower printing resolution. Therefore, maskless exposure module is started to be in the spotlight for flexible production system to meet the needs of fabrication in variable patterns at low cost. Since maskless exposure process adopts direct patterning to PCB, vibration problems become more critical compared to conventional masking type process. Moreover, movements of exposure engine as well as stage generate vibration sources in the system. Thus, it is imperative to analyze the vibration characteristics for the maskless exposure module to improve the quality and accuracy of PCB. In this study, vibration analysis using the finite element analysis is conducted to identify the critical structural parts deteriorating vibration performance. Also, Experimental investigations are conducted by single/dual encoder measurement process under the operating module speed. Measurement points of vibration are selected by three places, which are base of stage, exposure engine and top of stage, to check the effect of vibration from the exposure engine. Comparisons between analysis results and experimental measurement are conducted to confirm the accuracy of analysis results including the developed FE model. Finally, this studies show feasibility of optimal design using the developed FE analysis model.

Temperature dependence of exchange bias in Co/Ni anti-dot arrays

  • Seo, M.S.;Deshpande, N.G.;Lee, S.J.;Lee, Y.P.;Rhee, J.Y.;Kim, K.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.436-436
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    • 2011
  • Recently, spintronic devices with submicron structures are widely investigated to take advantage of their unique micromagnetic properties. In this work, we study the temperature dependence of exchange bias in bilayer anti-dot arrays made by depositing Co (40 nm)/Ni (5 nm) ferromagnetic bilayer on Si substrate to form anti-dot arrays with a diameter $1{\mu}m$. The anti-dot patterning was done only for the upper Co layer, while the Ni underlayer was kept unperforated. The temperature dependences of magnetoresistance (MR) and exchange bias were studied along magnetic easy and hard axes. The in-plane MR measurements were performed using a physical-property measurement system (PPMS ; Quantum Design Inc.) at various temperatures. The standard in-line four-point probe configuration was used for the electrical contacts. As temperature was varied, the MR data were obtained in which in-plane field (H=3 kOe) was applied in the directions along the hard and the easy axes with respect to the lattice plane. The temperature dependences of magnetic anisotropy and exchange bias were also studied along the magnetic easy and hard axes. As temperature decreases, the single peak splits into two peaks. While no exchange bias was observed along the magnetic easy axis, the exchange bias field steadily increased with decreasing temperature along the magnetic hard axis. These results were interpreted in connection with the magnetic anisotropy and the effect of the anti-dots in pinning domain wall motion along the respective direction.

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Direct printing process based on nanoimprint lithography to enhance the light extraction efficiency of AlGaInP based red LEDs

  • Cho, Joong-Yeon;Kim, Jin-Seung;Kim, Gyu-Tae;Lee, Heon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.171-171
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    • 2012
  • In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

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Current Status in Light Trapping Technique for Thin Film Silicon Solar Cells (박막태양전지의 광포획 기술 현황)

  • Park, Hyeongsik;Shin, Myunghoon;Ahn, Shihyun;Kim, Sunbo;Bong, Sungjae;Tuan, Anh Le;Hussain, S.Q.;Yi, Junsin
    • Current Photovoltaic Research
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    • v.2 no.3
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    • pp.95-102
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    • 2014
  • Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.

Analysis of Random Variations and Variation-Robust Advanced Device Structures

  • Nam, Hyohyun;Lee, Gyo Sub;Lee, Hyunjae;Park, In Jun;Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.8-22
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    • 2014
  • In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

Monitoring Compliance and Examining Challenges of a Smoke-free Policy in Jayapura, Indonesia

  • Wahyuti, Wahyuti;Hasairin, Suci K.;Mamoribo, Sherly N.;Ahsan, Abdillah;Kusuma, Dian
    • Journal of Preventive Medicine and Public Health
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    • v.52 no.6
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    • pp.427-432
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    • 2019
  • Objectives: In Indonesia, 61 million adults smoked in 2018, and 59 million were exposed to secondhand smoke at offices or restaurants in 2011. The Presidential Decree 109/2012 encouraged local governments to implement a smoke-free policy (SFP), and the city of Jayapura enacted a local bill (1/2015) to that effect in 2015. This study aimed to evaluate compliance with this bill and to explore challenges in implementing it. Methods: We conducted a mixed-methods study. Quantitatively, we assessed compliance of facilities with 6 criteria (per the bill): the presence of signage, the lack of smoking activity, the lack of sale of tobacco, the lack of tobacco advertisements, the lack of cigarette smoke, and the lack of ashtrays. We surveyed 192 facilities, including health facilities, educational facilities, places of worship, government offices, and indoor and outdoor public facilities. Qualitatively, we explored challenges in implementation by interviewing 19 informants (government officers, students, and community members). Results: The rate of compliance with all 6 criteria was 17% overall, ranging from 0% at outdoor public facilities to 50% at health facilities. Spatial patterning was absent, as shown by similar compliance rates for SFP facilities within a 1-km boundary around the provincial and city health offices compared to those outside the boundary. Implementation challenges included (1) a limited budget for enforcement, (2) a lack of support from local non-governmental organizations and universities, (3) a lack of public awareness at the facilities themselves, and (4) a lack of examples set by local leaders. Conclusions: Overall compliance was low in Jayapura due to many challenges. This information provides lessons regarding tobacco control policy in underdeveloped areas far from the central government.

Patterning of BiLaO film using imprinting process for liquid crystal display (임프린팅을 이용한 BiLaO 패터닝과 액정 디스플레이 소자의 응용)

  • Lee, Ju Hwan
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.64-68
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    • 2021
  • We demonstrate an effect of annealing temperature on imprinting process of BiLaO thin film for liquid crystal alignment. BiLaO prepared sol-gel process was deposited by spin coating on a glass substrate, and then transferred to a pre-fabricated aligned pattern which is fabricated on a silicon wafer by laser interference lithography. Thin film was annealed at different temperature of 100, 150, 200, and 250 ℃. From the polarized optical microscopy analysis, the liquid crystal orientation was not uniform at the annealing temperature of 200 ℃ or lower and the uniform liquid crystal alignment characteristics were confirmed at the annealing temperature of 250 ℃. From atomic force microscopy, the pattern was not transferred at a temperature of 200 ℃ or lower. In contrast, the pattern was transferred at 250 ℃. Anisotropy of the thin film was obtained by the alignment pattern transferred at a temperature of 250 ℃, and the liquid crystal molecules could be evenly oriented on the thin film. Therefore, it was confirmed that the liquid crystal alignment process by the imprinting process of the BiLaO oxide film was affected by the annealing temperature.

Recent Progress in Patterned Membranes for Membrane-Based Separation Process (분리공정을 위한 패턴화 멤브레인 최근 연구 동향)

  • Aung, Hein Htet;Patel, Rajkumar
    • Membrane Journal
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    • v.31 no.3
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    • pp.170-183
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    • 2021
  • Fouling has continued to be a problem that hinders the effectiveness of membrane properties. To solve this problem of reducing fouling effects on membrane surface properties, different and innovative types of membrane patterning has been proposed. This article reviews on the progress of patterned membranes and their separation process concerning the fouling effects of membranes. The types of separation processes that utilize the maximum effectiveness of the patterned membranes include nanofiltration (NF), reverse osmosis (RO), microfiltration (MF), ultrafiltration (UF), and pervaporation (PV). Using these separation processes have shown and prove to have a major effect on reducing fouling effects, and in addition, they also add beneficial properties to the patterned membranes. Each patterned membrane and their separation processes gave notable results in threshold towards flux, salt rejections, hydrophilicity and much more, but there are also some unsolved cases to be pointed out. In this review, the effects of patterned membrane for separation processes will be discussed.

Development of Uniform Ag Electrode and Heating Sensors Using Inkjet Printing Technology (잉크젯 프린팅 기술을 이용한 Ag 전극 균일성 및 발열 센서 연구)

  • Gun Woong Kim;Jaebum Jeong;Jin Ho Park;Woo Jin Jeong;Jun Young Kim
    • Journal of Sensor Science and Technology
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    • v.33 no.1
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    • pp.24-29
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    • 2024
  • Inkjet printing technology is used to mass-produce displays and electrochemical sensors by dropping tens of pico-liters or less of specific-purpose ink through nozzles, just as ink is sprayed and printed on paper. Unlike the deposition method for vaporizing material in a vacuum, inkjet printing technology can be used for processing even under general atmospheric pressure and has a cost advantage because the material is dissolved in a solvent and used in the form of ink. In addition, because it can only be printed on the desired part, masks are not required. However, a technical shortcoming is the difficulty for commercialization, such as uniformity for forming the thickness and coffee ring effect. As sizes of devices decrease, the need to print electrodes with precision, thinness, and uniformity increases. In this study, we improved the printing and processing conditions to form a homogeneous electrode using Ag ink (DGP-45LT-15C) and applied this for patterning to fabricate a heat sensor. Upon the application of voltage to the heat sensor, the model with an extended width exhibited superior heat performance. However, in terms of sheet resistance, the model yielded an equivalent value of 21.6 Ω/□ compared to the ITO.

Thick Film Resistors with Low Tolerance Using Photosensitive Polymer Resistor Paste (감광성 폴리머 저항 페이스트를 이용한 Low Tolerance 후막 저항체)

  • Kim, Dong-Kook;Park, Seong-Dae;Lee, Kyu-Bok;Kyoung, Jin-Bum
    • Applied Chemistry for Engineering
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    • v.21 no.4
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    • pp.411-416
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    • 2010
  • In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.