• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.11
• /
• pp.1005-1009
• /
• 2006

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.473-473
• /
• 2011

In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.7
• /
• pp.1349-1352
• /
• 2008

We report a novel patterning method for a homo-polymeric poly(3-hexylthiophene) (P3HT) nanofilm particularly capable of strong adhesion to a $SiO_2$ surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was selfassembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N- (2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETAS). Then, P3HT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion, patterning, and the film itself, the PEDOT nanofilms and SAMs were investigated with a $Scotch^{(R)}$ tape test, contact angle analyzer, ATR-FT-IR, and optical and atomic force microscopes. The evaluation showed that the newly developed all bottom-up process can offer a simple and inexpensive patterning method for P3HT nanofilms robustly adhered to an oxidized Si wafer surface by the mediation of $FeCl_3$ and amino-functionalized alkylsilane SAMs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.239-242
• /
• 2000

To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

• Journal of Surface Science and Engineering
• /
• v.49 no.1
• /
• pp.20-25
• /
• 2016

Femtosecond laser ablation of ultrathin polymer films on quartz glass using laser pulses of 100 fs and centered at ${\lambda}=400nm$ wavelength has been investigated for nanometer precision thin film patterning. Single-shot ablation craters on films of various thicknesses have been examined by atomic force microscopy, and beam spot diameters and ablation threshold fluences have been determined by square diameter-regression technique. The ablation thresholds of polymer film are about 1.5 times smaller than that of quartz substrate, which results in patterning crater arrays without damaging the substrate. In particular, at a $1/e^2$ laser spot diameter of $0.86{\mu}m$, the smallest craters of 150-nm diameter are fabricated on 15-nm thick film. The ablation thresholds are not influenced by the film thickness, but diameters of the ablated crater are bigger on thicker films than on thinner films. The ablation efficiency is also influenced by the laser beam spot size, following a $w_{0q}{^{-0.45}}$ dependence.

• Journal of Surface Science and Engineering
• /
• v.43 no.2
• /
• pp.80-85
• /
• 2010

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.2
• /
• pp.59-62
• /
• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.167-168
• /
• 2006

High quality 3D-heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources ($As_2$, $As_4$) were varied to calibrate the selective area growth conditions. Scanning micro-photoluminescence ($\mu$-PL) measurements and following analysis revealed that the gradually (adiabatically) coupled 2DEG-1D-1DEG field effect transistor (FET) system was realized. This 3D-heterostructure is very promising for the realization of the meso-scopic electronic devices and circuits since it makes it possible to form direct ohmic contact to the (quasi) 1DEG.

• Journal of Sensor Science and Technology
• /
• v.28 no.1
• /
• pp.1-6
• /
• 2019

This paper presents an air flow sensor (AFS) based on a polymer thin film. This AFS primarily consists of a polymer membrane attached to a metal-patterned glass substrate and a temperature-sensing element composed of NiCr. These two components were integrated on a single glass substrate. The AFS measures changes in capacitance caused by deformation of the polymer membrane based on the air flow and simultaneously detects the temperature of the surrounding environment. A readout integrated circuit (ROIC) was also fabricated for signal processing, and an ROIC chip, 1.8 mm by 1.9 mm in size, was packaged with an AFS in the form of a system-in-package module. The total size of the AFS is 1 by 1 cm, and the diameter and thickness of the circular-shaped polymer membrane are 4 mm and $15{\mu}m$, respectively. The rate of change of the capacitance is approximately 11.2% for air flows ranging between 0 and 40 m/s.

• Korean Journal of Materials Research
• /
• v.23 no.7
• /
• pp.379-384
• /
• 2013

In order to produce size-controllable Ag nanoparticles and a nanomesh-patterned Si substrate, we introduce a rapid thermal annealing(RTA) method and a metal assisted chemical etching(MCE) process. Ag nanoparticles were self-organized from a thin Ag film on a Si substrate through the RTA process. The mean diameter of the nanoparticles was modulated by changing the thickness of the Ag film. Furthermore, we controlled the surface energy of the Si substrate by changing the Ar or $H_2$ ambient gas during the RTA process, and the modified surface energy was evaluated through water contact angle test. A smaller mean diameter of Ag nanoparticles was obtained under $H_2$ gas at RTA, compared to that under Ar, from the same thickness of Ag thin film. This result was observed by SEM and summarized by statistical analysis. The mechanism of this result was determined by the surface energy change caused by the chemical reaction between the Si substrate and $H_2$. The change of the surface energy affected on uniformity in the MCE process using Ag nanoparticles as catalyst. The nanoparticles formed under ambient Ar, having high surface energy, randomly moved in the lateral direction on the substrate even though the etching solution consisting of 10 % HF and 0.12 % $H_2O_2$ was cooled down to $-20^{\circ}C$ to minimize thermal energy, which could act as the driving force of movement. On the other hand, the nanoparticles thermally treated under ambient $H_2$ had low surface energy as the surface of the Si substrate reacted with $H_2$. That's why the Ag nanoparticles could keep their pattern and vertically etch the Si substrate during MCE.