• Korean Journal of Cognitive Science
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• v.22 no.4
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• pp.365-384
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• 2011

A recent study of visual working memory(VWM) under a change detection paradigm proposed an idea that the comparison process of VWM representations against incoming perceptual inputs can be performed more rapidly than the process of forming durable memory representations into VWM. To test this hypothesis, we compared the size of interference effect caused by pattern-backward masks following after either the sample(sample-mask condition) or test items (test-mask condition). In Experiment 1, subjects performed a color change detection task for four colored-boxes, and pattern masks with mask-onset asynchronies(MSOA) of either 64ms or 150ms followed each item location either after the sample or after the test items. The change detection accuracy was both comparable in the sample-mask condition regardless of the MSOAs, whereas the accuracy in the trials with a MSOA of 150ms was substantially higher than the MSOA of 65ms in the test-masking condition. In Experiment 2, we manipulated setsizes to 1, 2, 3, 4 items and also MSOAs to 117ms, 234ms, 350ms, 484ms and compared the pattern of interference across a variety of setsize and MSOA conditions. The sample-mask condition yielded a pattern of masking interference which became more evident as the setsize increases and as the MSOA was shorter. However, this pattern of interference was less apparent in the test-mask condition. These results indicate that the comparison process between remembered items in VWM and perceptual inputs is less vulnerable to interference from pattern-backward masking than VWM consolidation is, and thus support for the recent idea that the comparison process in VWM can be performed very fast and accurately.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.619-628
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• 2015

In this paper, we consider a method for estimating a stripe-type defect and the reconstruction of a defect-free L/S type mask used in lithography. Comparing diffraction patterns of defected and defect-free masks, we derive equations for the estimation of the location and size of the defect. We construct an analytical model for this problem and derive closed form equations to determine the location and size using phase retrieval problem solving techniques. Consequently, we develop an algorithm that determines a defect-free mask pattern. An example shows the validity of the equations.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1532-1535
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• 1987

In this paper, we propose the algorithm for mask level simulation. The circuit parameters were extracted from the photomask data in format of bitmap. The extracted circuit parameter was transformed into the input file format of SPICE-16. And then the simulation of mask pattern data was carried out the SPICE-16. Thus the error operation of IC due to the mistake of photomask pattern could be prevented.

• Journal of the Korean Society of Clothing and Textiles
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• v.45 no.5
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• pp.825-839
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• 2021

This study aims to develop jacquard fashion masks using traditional patterns and investigates the preference and emotions of consumers for them. Nine patterns were designed with the motifs of plum flower, turtle, and geometric patterns using an Adobe Illustrator program. After that, 20 kinds of jacquard fabrics were developed using those patterns, and prototype masks were made. Furthermore, data were collected using a survey of 231 adult consumers to understand the emotional images evoked by jacquard fashion masks with traditional patterns. The results of the research show that the emotional dimension derived from jacquard fashion masks with traditional patterns consists of seven factors: luxurious image, frugal image, feminine image, oriental image, sporty image, geometrical image, generous image. We found that consumers preferred the M6 with the plum flower pattern as the motif as the most preferred design, while M13 with the geometric pattern as the motif was the lowest preferred.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.164-168
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• 2007

Deformation of a shadow mask is one of the problems encountered during the deposition of organic materials for manufacturing large size OLED. The larger the glass substrate, the larger the shadow mask becomes. But as the size of the shadow mask increases, its deformation becomes more severe, thereby making it difficult to deposit organic materials in a precise pattern on a substrate. In this paper, a new type mask-frame structure is proposed. The proposed mask-frame structure making a curved mask has the ability of reducing drooping of mask. The test frame is fabricated and evaluation experiments are performed.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.348-352
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• 2008

Deformation of the shadow mask is one of the problems encountered during the deposition of organic materials for manufacturing large size organic light emitting diode (OLED). The larger the glass substrate, the larger the shadow mask becomes. As the size of the shadow mask increases, its deformation becomes more severe, thereby making it difficult to deposit organic materials in a precise pattern on a substrate. In this paper, a new method for reducing drooping of the shadow mask for large size OLED vapor depositions is proposed. The proposed shadow mask with cross stripe wires has higher stiffness than the pure shadow mask, which results in reducing drooping of the shadow mask. A commercial FEM program, ANSYS, is used for the evaluation of the proposed shadow mask. The analysis showed that the shadow mask with cross stripe wires have an effect on reducing drooping about 18.6% or more.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.11-15
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• 2006

Expose equipment system that is used for manufacturing process of Flat Panel Display, is most important equipment in whole process. Expose equipment that is for making pattern of mask on substrate, consists of optical part, stage part and transport part. The stage is an important part that aligns mask and substrate for delivering pattern of mask to substrate exactly. In this paper, control system of expose stage that is able to use mask and substrate of diverse size, with PC controller using GUI interface instead of PLC control system. The existing PLC control system does not have the suitable structure for using mask of diverse size. GUI interface integration control system is based on PC. So it has the advantage of convenient use and active operation. We embodied PLC control system in integration control system based on PC, and verified utility possibility through the standard test course.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.1
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• pp.22-26
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• 2003

Overlap Errors and side-lobes have been simultaneously solved by the rule-based correction using the rules extracted from test patterns. Lithography process parameters affecting attPSM lithography process have been determined by the fitting method to the real process data. The correction using scattering bars has been compared to the Cr shield method. The optimal insertion rule of the scattering bal's has made it possible to suppress the side-lobes and to enhance DOF at the same time. Therefore, in this paper, the solution to both side-lobe and overlap Error has been proposed using rule-based confection. Compared to the existing Cr shield method, the proposed rule-based correction with scattering bars can reduce the process complexity and time for mask production.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.11
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• pp.5605-5623
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• 2016

We propose a face recognition method that utilizes the LCP face descriptor. The proposed method applies a LoG mask to extract a face contour response, and employs the LCP algorithm to produce a binary pattern representation that ensures high recognition performance even under the changes in illumination, noise, and aging. The proposed LCP algorithm produces excellent noise reduction and efficiency in removing unnecessary information from the face by extracting a face contour response using the LoG mask, whose behavior is similar to the human eye. Majority of reported algorithms search for face contour response information. On the other hand, our proposed LCP algorithm produces results expressing major facial information by applying the threshold to the search area with only 8 bits. However, the LCP algorithm produces results that express major facial information with only 8-bits by applying a threshold value to the search area. Therefore, compared to previous approaches, the LCP algorithm maintains a consistent accuracy under varying circumstances, and produces a high face recognition rate with a relatively small feature vector. The test results indicate that the LCP algorithm produces a higher facial recognition rate than the rate of human visual's recognition capability, and outperforms the existing methods.